Composite Transistors XN04609 (XN4609) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) +0.2 2.8 –0.3 +0.25 ■ Tr1 0.95 +0.1 +0.1 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Absolute Maximum Ratings (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Collector current IC 0.5 A ICP 1 A Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 0.95 0.4±0.2 Peak collector current Tr2 3 0.1 to 0.3 2SD1328 + 2SB0709A(2SB709A) Parameter 4 0 to 0.05 ● 2 0.16–0.06 ■ Basic Part Number of Element 5 0.8 +0.2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. +0.2 ● 1.1–0.1 ● 2.9 –0.05 ■ Features 1.9±0.1 +0.1 6 1.45±0.1 0.65±0.15 1 0.5 –0.05 1.5 –0.05 0.3 –0.05 0.65±0.15 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5F Internal Connection 6 Tr1 2 5 4 1 Tr2 3 Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors ■ Electrical Characteristics ● XN04609 (Ta=25˚C) Tr1 Parameter Collector to base voltage Symbol Conditions typ max Unit IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 V Collector cutoff current ICBO VCB = 25V, IE = 0 hFE1 VCE = 2V, IC = 0.5A*1 200 hFE2 VCE = 2V, IC = 1A*1 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 20mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*2 Forward current transfer ratio ● 0.1 µA 800 0.13 0.4 1.2 V V 200 MHz 10 pF 1.0 Ω Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 ICBO VCB = –20V, IE = 0 Collector cutoff current ICEO VCE = –10V, IE = 0 Forward current transfer ratio hFE VCE = –10V, IC = –2mA V 160 – 0.1 µA –100 µA 460 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.3 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF *1 Pulse measurement *2 Ron test circuit 1kΩ IB=1mA VB VV VB ✕1000(Ω) Ron= VA–VB 2 min VCBO VA f=1kHz V=0.3V Composite Transistors XN04609 Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE VCE(sat) — IC 1.2 100 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.2 0.5mA 0 1 2 3 4 5 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 6 Collector to emitter voltage VCE (V) 0.1 0.3 hFE — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 800 Ta=75˚C 25˚C –25˚C 200 0.3 1 Collector current IC 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 3 (A) 10 1 3 10 Cob — VCB VCB=10V Ta=25˚C 350 300 250 200 150 100 0 –1 0.3 Collector current IC (A) 24 50 0.1 10 fT — I E 1000 0 0.01 0.03 30 0.01 0.01 0.03 10 400 VCE=2V 400 3 IC/IB=10 Collector current IC (A) 1200 600 1 Collector output capacitance Cob (pF) 0 IC/IB=25 Base to emitter saturation voltage VBE(sat) (V) IB=4.0mA 1.0 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C VBE(sat) — IC 100 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 –2 –3 –5 –10 –20 –30 –50 –100 Emitter current IE (mA) 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 3 Composite Transistors XN04609 Characteristics charts of Tr2 IC — VCE IC — I B Ta=25˚C –200µA –150µA –20 –100µA –10 Base current IB (µA) –250µA –40 –30 –40 –30 –20 –200 –150 –100 –50 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –100 –200 –300 IC — VBE 25˚C –25˚C –160 –120 –80 –40 –3 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –0.003 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 –0.001 –1 Base to emitter voltage VBE (V) fT — IE –30 Ta=75˚C 300 25˚C –25˚C 200 100 –3 100 80 60 40 20 10 Emitter current IE 30 (mA) 100 –10 –30 –100 –300 –1000 Collector current IC (mA) NF — IE 6 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 5 Noise figure NF (dB) Collector output capacitance Cob (pF) 120 3 400 Cob — VCB VCB=–10V Ta=25˚C 1 500 0 –1 –100 –300 –1000 8 140 0.3 –10 –1.6 VCE=–10V Collector current IC (mA) 160 0 0.1 –3 –1.2 hFE — IC IC/IB=10 –1 –0.8 600 Forward current transfer ratio hFE VCE= –5V Collector to emitter saturation voltage VCE(sat) (V) –10 Ta=75˚C –0.4 Base to emitter voltage VBE (V) VCE(sat) — IC –240 –200 0 –400 Base current IB (µA) Collector to emitter voltage VCE (V) Transition frequency fT (MHz) –250 0 0 4 –300 –10 –50µA 0 VCE=–5V Ta=25˚C –350 –50 Collector current IC (mA) Collector current IC (mA) VCE=–5V Ta=25˚C IB=–300µA –50 Collector current IC (mA) IB — VBE –400 –60 –60 4 3 2 1 1 0 –1 –2 –3 –5 –10 –20–30 –50 –100 Collector to base voltage VCB (V) 0 0.01 0.03 0.1 0.3 1 3 Emitter current IE (mA) 10 Composite Transistors XN04609 NF — IE 20 18 h Parameter — IE VCB=–5V Rg=50kΩ Ta=25˚C 300 300 200 200 hfe hfe 16 IE=2mA f=270Hz Ta=25˚C 100 100 14 f=100Hz 10 1kHz 8 hoe (µS) 30 20 10 50 30 20 hoe (µS) 10 10kHz 6 5 4 5 hie (kΩ) 3 3 VCE=–5V f=270Hz Ta=25˚C 2 2 0 0.1 50 Parameter h 12 Parameter h Noise figure NF (dB) h Parameter — VCE 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10 1 0.1 hre 0.2 0.3 0.5 (×10–4) 1 2 3 5 Emitter current IE (mA) 10 hre (×10–4) hie (kΩ) 2 1 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or 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