Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) 350 W (PEAK) 1025–1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Characterized using Mode–S Pulse Format CASE 355E–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 31 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 1590 9.1 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Junction Temperature TJ 200 °C Symbol Max Unit RθJC 0.11 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case θJC measured using Mode–S pulse train, 128 µs burst 0.5 µs on, 0.5 µs off repeating at 6.4 ms interval.) REV 1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 25 mAdc hFE 20 — — — Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) GPB 8.5 9.0 — dB Collector Efficiency (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) η 40 — — % Load Mismatch (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power * &% # "&% * * * * * * * * # !&%"&% Z1–Z9 — Microstrip, See Details Board Material — Teflon, Glass Laminate Dielectric Thickness = 0.030″ Dεr = 2.55, 2 Oz. Copper C1 — 75 pF 100 Mil Chip Capacitor C2 — 39 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 100 µF, 100 Vdc, Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long Figure 1. Test Circuit REV 1 2 "!&% !&%"&%"!(#(%%$ / B ' ' ">5<. 8-.$ " "&% "!(# (%%$ (1) 128 µs burst 0.5 µs on, 0.5 µs off (1) repeating at 6.4 ms interval. Figure 2. Output Power versus Input Power *27 *! *8 Ω / B / B "!&% ( "4D' ' / B *27 !$ *!C !$ 3 3 3 3 3 3 3 3 3 3 *! 2< =1. ,873>0+=. 8/ =1. 89=26>6 58+269.-+7,. 27=8 @12,1 =1. -.?2,. 89.;+=.< += + 02?.7 8>=9>= 98@.; ?85=+0. +7- /;.:>.7,A Figure 3. Series Equivalent Input/Output Impedances REV 1 3 PACKAGE DIMENSIONS –A– M U Q 2 PL % –B– R K2 PL D J N E H C –T– CASE 355E–01 ISSUE B Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 # $ $%) " !%!# %%# $ REV 1 !%$ $! %!# "# $ ) ! %#! $! # $