MA-COM M32000D4AFP

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by MRF327/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
• Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
• Built–In Matching Network for Broadband Operation Using Double Match
Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
• Characterized for 100 =8 500 MHz
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
33
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
9.0
12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
CASE 316–01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IC = 0)
V(BR)CBO
60
—
—
Vdc
ICBO
—
—
5.0
mAdc
hFE
20
—
80
—
Cob
—
95
125
pF
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
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ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 80 W, f = 400 MHz)
GPE
7.3
9.0
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 80 W, f = 400 MHz)
η
50
60
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 80 W, f = 400 MHz,
VSWR = 30:1 All Phase Angles)
ψ
FUNCTIONAL TESTS (Figure 1)
No Degradation in Output Power
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C1, C2, C7, C8, C9 — 1.0C–C20 pF Piston Trimmer (Johanson JMC 5501)
C3, C4 — 36 pF ATC 100 mil Chip Capacitor
C5, C6 — 43 pF ATC 100 mil Chip Capacitor
C10 — 100 pF UNELCO
C11, C15 — 0.1 µF Erie Redcap
C12, C13 — 680 pF Feedthru
C14 — 1.0 µF 50 V Tantalum
L1 — 4 Turns #22 AWG Enameled, 3/16″ ID Closewound with Ferroxcube
L1 — Bead (#56–590–65/4B) on Ground End of Coil
L2 — Ferroxcube VK200–19/4B Ferrite Choke
L3 — 7 Turns #18 AWG, 11/16″ Long, Wound on a 100 kΩ 2.0 Watt Resistor
2
L4 — 6 Turns #20 AWG Enameled, 3/16″ ID Closewound
L5 — 4 Turns #22 AWG Enameled, 1/8″ ID Closewound
Z1 — Microstrip 0.2″ W x 1.5″ L
Z2 — Microstrip 0.17″ W x 1.16″ L
Z3 — Microstrip 0.17″ W x 0.63″ L
R1, R2 — 10 Ω 2.0 Watt
Board — Glass Teflon εr = 2.56, t = 0.062″
Input/Output Connectors Type N
DUT Socket Lead Frame Etched from 80–mil–Thick Copper
Figure 1. 400 MHz Test Circuit
REV 1
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Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Frequency
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Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
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Figure 6. Output Power versus Input Power
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0 B
C
+37
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4
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Figure 7. Series Equivalent Input–Output Impedance
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4
PACKAGE DIMENSIONS
F
D
R
!&%
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K
Q
L
B
J
C
E
N
H
A
U
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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