Order this document by MRF1500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Motorola Preferred Device Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min 500 W (PEAK), 1025– 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching • Characterized with 10 µs, 1.0% Duty Cycle Pulses CASE 355E–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 35 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 1750 10 Watts W/°C Storage Temperature Range Tstg – 65 to +200 °C TJ 200 °C Symbol Max Unit RθJC 0.1 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @32 µs, 2.0%) Preferred devices are Motorola recommended choices for future use and best overall value. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF1500 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 70 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 70 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 40 mAdc hFE 20 40 — — Common–Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) GPB 5.2 — — dB Collector Efficiency (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) η 37 — — % Load Mismatch (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz, Load VSWR = 10:1 All Phase Angles) ψ Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power + C2 C3 C4 + C5 + – Z7 RF INPUT D.U.T. Z1 Z2 Z3 Z4 Z5 Z6 Z8 C1 — 82 pF 100 mil Chip Capacitor C2 — 82 pF 100 mill Chip Capacitor C3 — 0.1 µF C4 — 10 µF 100 V, Electrolytic C5 — 1000 µF 60 V, Electrolytic RF OUTPUT C1 Z9 Z10 Z11 Z12 Z13 Z14 L1 — 3 Turns, #18 AWG, 1/8″ ID, 0.18 Long Z1–Z14 — Microstrip, See Details Below Board Material — Teflon–Glass Laminate, Dielectric Thickness = .020″, ∈r = 2.55, 2 oz. Copper 1.200 277 331 528 1.183 840 464 205 418 508 1.332 50 50 182 1.576 383 383 380 50 182 698 50 50 50 50 431 141 50 50 182 217 1.598 630 Figure 1. Test Circuit MRF1500 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS POUT , OUTPUT POWER (WATTS) 600 500 400 300 200 VCC = 50 V PULSE = 10µs, 1% DF FREQ = 1090 MHz 100 0 20 40 60 80 100 120 140 160 180 200 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power f = 1025 MHz 1090 1050 ZOL* = ZOUT 1150 f = 1025 MHz 1125 Zin 1125 1150 1050 1090 f MHz Zin OHMS ZOL* 1025 1.6 + j3.9 1.6 + j1.7 1050 2.0 + j4.0 1.6 + j1.6 1090 2.8 + j4.0 1.5 + j1.1 1125 3.9 + j3.8 1.5 + j1.4 1150 4.6 + j3.0 1.4 + j1.6 Zo = 10 Ω ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF1500 3 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –A– M U Q 2 PL 0.76 (0.030) M T A M B M 1 K –B– R 3 2 D J E N STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE C H –T– DIM A B C D E H J K M N Q R U INCHES MIN MAX 0.890 0.910 0.375 0.395 0.190 0.210 0.145 0.155 0.055 0.065 0.120 0.130 0.003 0.006 0.770 0.830 45_REF 0.490 0.510 0.115 0.125 0.395 0.405 0.700 BSC MILLIMETERS MIN MAX 22.61 23.11 9.53 10.03 4.83 5.33 3.69 3.93 1.40 1.65 3.05 3.30 0.08 0.15 19.56 21.08 45_REF 12.45 12.95 2.93 3.17 10.04 10.28 17.78 BSC SEATING PLANE CASE 355E–01 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF1500 4 ◊ *MRF1500/D* MRF1500/D MOTOROLA RF DEVICE DATA