Data Sheet

83B
PDTC115EMB
SO
T8
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
Rev. 1 — 1 June 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3
(SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA115EMB.
1.2 Features and benefits
 20 mA output current capability
 Simplifies circuit design
 Reduces component count
 AEC-Q101 qualified
 Built-in bias resistors
 Leadless ultra small SMD plastic
package
 Reduces pick and place costs
 Low package height of 0.37 mm
1.3 Applications
 Low-current peripheral driver
 Control of IC inputs
 Replaces general-purpose transistors
in digital applications
 Mobile applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
50
V
IO
output current
-
-
20
mA
R1
bias resistor 1 (input)
70
100
130
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
Tamb = 25 °C
PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
I
input (base)
2
G
GND (emitter)
Simplified outline
Graphic symbol
1
3
3
3
O
output (collector)
R1
1
2
Transparent
top view
R2
2
SOT883B (DFN1006B-3)
sym007
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PDTC115EMB
DFN1006B-3
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
SOT883B
4. Marking
Table 4.
Marking codes
Type number
Marking code
PDTC115EMB
0011 0001
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
PDTC115EMB
Product data sheet
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Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
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PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage
positive
-
40
V
negative
-
-10
V
-
20
mA
IO
output current
ICM
peak collector current
pulsed; tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
-
100
mA
-
250
mW
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
006aad009
300
Ptot
(mW)
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
FR4 PCB, standard footprint
Fig 2.
Power derating curve for DFN1006B-3 (SOT883B)
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[1]
Min
Typ
Max
Unit
-
-
500
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PDTC115EMB
Product data sheet
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Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
3 of 11
PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
006aab603
103
duty cycle =
1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.2
0.1
0.05
0.02
10
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
102
10
103
tp (s)
FR4 PCB, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C
current
VCE = 30 V; IB = 0 A; Tj = 150 °C
-
-
1
µA
-
-
5
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
50
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA; Tamb = 25 °C
80
-
-
VCEsat
collector-emitter
saturation voltage
IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C
-
-
150
mV
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA; Tamb = 25 °C
-
1.1
0.5
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 1 mA; Tamb = 25 °C
3
1.5
-
V
R1
bias resistor 1 (input)
Tamb = 25 °C
70
100
130
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
CC
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
2.5
pF
fT
transition frequency
VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
-
230
-
MHz
[1]
[1]
Characteristics of built-in transistor.
PDTC115EMB
Product data sheet
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Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
4 of 11
PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
006aad081
103
(1)
hFE
006aad082
10-1
VCEsat
(V)
(2)
(1)
(3)
(2)
(3)
102
10
10-1
1
10
10-2
10-1
1
IC (A)
IC/IB = 20
VCE = 5 V
Fig 4.
10
IC (mA)
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
(3) Tamb = -40 °C
DC current gain as a function of collector
current; typical values
Fig 5.
006aad083
10
Collector-emitter saturation voltage as a
function of collector current; typical values
006aad084
10
VI(on)
(V)
VI(off)
(V)
(1)
(1)
(2)
(2)
(3)
1
1
10-1
10-1
1
10
(3)
10-1
10-1
IC (mA)
Fig 6.
VCE = 5 V
(1) Tamb = -40 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
On-state input voltage as a function of collector
current; typical values
Product data sheet
10
IC (mA)
VCE = 0.3 V
PDTC115EMB
1
Fig 7.
Off-state input voltage as a function of collector
current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
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PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
006aad055
3
006aac757
103
Cc
(pF)
fT
(MHz)
2
102
1
10
10-1
0
0
10
20
30
40
50
VCB (V)
102
10
IC (mA)
f = 1 MHz; Tamb = 25 °C
Fig 8.
1
VCE = 5 V; Tamb = 25 °C
Collector capacitance as a function of
collector-base voltage; typical values of built-in
transistor
Fig 9.
Transition frequency as a function of collector
current; typical values of built-in transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PDTC115EMB
Product data sheet
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Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
6 of 11
PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
9. Package outline
0.65
0.55
0.40
0.34
0.35
0.20
0.12
1
0.04 max
2
0.30
0.22
1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 10. Package outline SOT883B (DFN1006B-3)
10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig 11. Reflow soldering footprint for SOT883B (DFN1006B-3)
PDTC115EMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
7 of 11
PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PDTC115EMB v.1
20120601
Product data sheet
-
-
PDTC115EMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
8 of 11
PDTC115EMB
NXP Semiconductors
NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PDTC115EMB
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
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PDTC115EMB
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NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PDTC115EMB
Product data sheet
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Rev. 1 — 1 June 2012
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PDTC115EMB
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NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . .6
Quality information . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 June 2012
Document identifier: PDTC115EMB