VS-UFB211FA40 Datasheet

VS-UFB211FA40
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 210 A
FEATURES
1
4
2
3
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (TJ max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
SOT-227
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-UFB211FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
PRODUCT SUMMARY
VR
400 V
IF(AV) per module at TC = 133 °C
210 A
trr
40 ns
Type
Modules - Diode FRED Pt®
Package
SOT-227
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
TEST CONDITIONS
VR
MAX.
UNITS
400
V
Continuous forward current per diode
IF
(1)
TC = 90 °C
210
Single pulse forward current per diode
IFSM
TC = 25 °C
1300
PD
TC = 90 °C
531
Any terminal to case, t = 1 minute
2500
V
-55 to +175
°C
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
VISOL
TJ, TStg
A
W
Note
(1) Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
VBR
Forward voltage
VFM
Reverse leakage current
IRM
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
400
-
-
IF = 100 A
-
1.06
1.24
IF = 100 A, TJ = 175 °C
-
0.85
0.95
UNITS
V
VR = VR rated
-
1.3
50
μA
TJ = 175 °C, VR = VR rated
-
0.36
4
mA
VR = 400 V
-
100
-
pF
Revision: 31-May-16
Document Number: 95843
1
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VS-UFB211FA40
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
40
-
TJ = 25 °C
-
93
-
TJ = 125 °C
-
172
-
-
10.5
-
-
20.2
-
IF = 150 A
TJ = 25 °C
dIF/dt = 200 A/μs
TJ = 125 °C
VR = 200 V
TJ = 25 °C
-
490
-
-
1740
-
MIN.
TYP.
MAX.
-
-
0.32
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heat sink
TEST CONDITIONS
RthJC
RthCS
-
-
0.16
Flat, greased surface
-
0.1
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
Weight
Mounting torque
Case style
°C/W
SOT-227
1000
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
UNITS
100
TJ = 175 °C
TJ = 25 °C
10
1
TJ = 175 °C
100
10
1
TJ = 25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
0
2.5
100
200
300
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
10
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 31-May-16
Document Number: 95843
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB211FA40
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Vishay Semiconductors
ZthJC - Thermal Impedance (°C/W)
1
PDM
0.1
t1
t2
DC
Notes:
1. Duty factor D = t1/t2
.
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
0.01
0.0001
0.001
0.01
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
250
VR = 200 V
TJ = 125 °C
TJ = 25 °C
150
100
DC
Square wave (D = 0.5)
80 % rated VR applied
75
50
150
100
25
See note (1)
0
0
50
100
150
200
250
300
50
100
350
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
500
5000
4500
400
4000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
3500
300
Qrr (nC)
Forward Power Loss (W)
IF = 150 A
IF = 75 A
200
125
trr (ns)
Allowable Case Temperature (°C)
175
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
200
100
DC
3000
IF = 150 A
IF = 75 A
2500
2000
1500
1000
500
0
0
50
100
150
200
250
300
350
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 31-May-16
Document Number: 95843
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB211FA40
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Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 31-May-16
Document Number: 95843
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB211FA40
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
UF
B
211
F
A
40
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast rectifier
3
-
Ultrafast Pt diffused
4
-
Current rating (211 = 210 A)
5
-
Circuit configuration (2 separate diodes, parallel pin-out)
6
-
Package indicator (SOT-227 standard insulated base)
7
-
Voltage rating (40 = 400 V)
Quantity per tube is 10, M4 screw and washer included
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
2 separate diodes,
parallel pin-out
4
3
1
2
4
3
1
2
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 31-May-16
Document Number: 95843
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-UFB211FA40
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters (inches) SOT-227 Gen 2
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Revision: 31-May-16
Document Number: 95843
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12
Document Number: 95423
1
For technical questions within your region: [email protected], [email protected], [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000