VS-UFB170FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 170 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Very low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline SOT-227 • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY VR 600 V IF(AV) per module at TC = 76 °C 170 A trr 60 ns Type Modules - Diode FRED Pt® Package SOT-227 The VS-UFB170FA60 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 600 V Continuous forward current per diode IF TC = 90 °C 94 Single pulse forward current per diode IFSM TC = 25 °C 850 PD TC = 90 °C 233 W Any terminal to case, t = 1 minute 2500 V -55 to +175 °C Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures VISOL TJ, TStg A Revision: 31-May-16 Document Number: 94814 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB170FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 50 A Forward voltage, per leg VFM Reverse leakage current, per leg IRM Junction capacitance, per leg CT MIN. TYP. MAX. 600 - - - 1.02 1.19 UNITS IF = 50 A, TJ = 175 °C - 0.87 - IF = 100 A - 1.17 1.43 IF = 100 A, TJ = 175 °C - 1.03 - VR = VR rated - 0.5 50 μA TJ = 175 °C, VR = VR rated - 0.1 2 mA VR = 600 V - 43 - pF UNITS V DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time, per leg SYMBOL trr TEST CONDITIONS MIN. TYP. MAX. TJ = 25 °C, IF = 1 A dIF/dt = 200 A/μs VR = 30 V - 60 - - 170 - - 270 - TJ = 25 °C TJ = 125 °C Peak recovery current, per leg IRRM Reverse recovery charge, per leg Qrr Reverse recovery time, per leg trr Peak recovery current, per leg IRRM Reverse recovery charge, per leg Qrr IF = 25 A TJ = 25 °C TJ = 125 °C dIF/dt = 500 A/μs VR = 200 V - 40 - - 54 - TJ = 25 °C - 3.4 - TJ = 125 °C - 6.8 - TJ = 25 °C - 220 - TJ = 125 °C - 300 - IF = 50 A TJ = 25 °C - 47 - - 61 - TJ = 25 °C - 5.2 - TJ = 125 °C - 9.1 - MIN. TYP. MAX. - - 0.73 TJ = 125 °C dIF/dt = 500 A/μs VR = 200 V ns A μC ns A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS RthJC RthCS Flat, greased surface Weight Mounting torque Case style - - 0.365 - 0.10 - UNITS °C/W - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) SOT-227 Revision: 31-May-16 Document Number: 94814 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB170FA60 Vishay Semiconductors 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C TJ = 125 °C 10 TJ = 25 °C 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 0.0001 1 0 0.5 1.0 1.5 2.0 0 2.5 200 100 300 400 500 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) 600 CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 PDM 0.1 t1 DC t2 Single pulse (thermal resistance) 0.01 0.0001 0.001 Notes: 1. Duty factor D = t1/t.2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 31-May-16 Document Number: 94814 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB170FA60 Vishay Semiconductors 460 175 VR = 200 V 125 °C 420 150 380 125 IF = 50 A 340 DC 100 trr (ns) Allowable Case Temperature (°C) www.vishay.com 75 IF = 25 A 300 260 220 50 Square wave (D = 0.5) 80 % rated VR applied 25 180 25 °C 140 0 100 0 20 40 60 80 100 120 140 160 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 300 12 000 VR = 200 V 10 000 IF = 50 A IF = 25 A 9000 200 8000 Qrr (nC) Average Power Loss (W) 11 000 250 Limit RMS 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 125 °C 6000 5000 4000 3000 DC 50 7000 25 °C 2000 1000 0 0 20 40 60 100 80 100 120 140 160 180 200 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Fig. 8 - Typical Stored Charge vs. dIF/dt (Per Leg) 80 VR = 200 V 70 IF = 50 A IF = 25 A 60 Irr (A) 50 40 125 °C 30 20 25 °C 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Recovery Current vs. dIF/dt (Per Leg) Revision: 31-May-16 Document Number: 94814 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB170FA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 94814 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB170FA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 170 F A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast FRED Pt® diffused 4 - Current rating (170 = 170 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 94814 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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