VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP (Warp Speed IGBT), 50 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor • Al2O3 DBC • Very low stray inductance design for high speed operation • Speed 8 kHz to 30 kHz > 20 kHz hard switching, > 200 kHz resonant mode MTP • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V IC DC 69 A VCE(on) 2.22 V Speed 8 kHz to 30 kHz Package MTP Circuit Full bridge BENEFITS • Optimized for welding, UPS and SMPS applications • Low EMI, requires less snubbing • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 69 TC = 80 °C 46 Pulsed collector current ICM 200 Peak switching current ILM 200 Diode continuous forward current IF A TC = 100 °C 25 Peak diode forward current IFM 200 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation per single IGBT PD V Any terminal to case, t = 1 minute 2500 TC = 25 °C 195 TC = 100 °C 78 W Revision: 10-Jun-15 Document Number: 94539 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Temperature coefficient of breakdown voltage V(BR)CES/TJ Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current Diode forward voltage drop VCE(on) VGE(th) VGE(th)/TJ gfe ICES (1) IGES VFM TEST CONDITIONS MIN. TYP. MAX. UNITS 600 - - V VGE = 0 V, IC = 4 mA (25 °C to 125 °C) - +0.6 - V/°C VGE = 15 V, IC = 25 A - 2.22 3.14 VGE = 15 V, IC = 50 A - 2.43 3.25 VGE = 15 V, IC = 25 A, TJ = 150 °C - 1.65 1.93 VGE = 15 V, IC = 50 A, TJ = 150 °C - 2.08 2.45 VCE = VGE, IC = 250 μA 3 - 6 VCE = VGE, IC = 250 μA (25 °C to 125 °C) - - 17 - mV/°C VCE = 100 V, IC = 25 A, PW = 80 μs - 43 - S VGE = 0 V, VCE = 600 V, TJ = 25 °C - - 250 μA VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 10 mA VGE = ± 20 V - - ± 250 nA IC = 25 A - 1.36 1.64 IC = 50 A - 1.57 1.93 IC = 25 A; TJ = 150 °C - 1.19 1.42 IC = 50 A; TJ = 150 °C - 1.48 1.80 MIN. TYP. MAX. - 175 263 VCC = 480 V VGE = 15 V - 27 41 - 71 107 Rg = 5 , IC = 25 A VCC = 480 V VGE = ± 15 V, TJ = 25 °C - 0.13 0.20 - 0.42 0.62 - 0.55 0.82 Rg = 5 , IC = 25 A VCC = 480 V VGE = ± 15 V, TJ = 125 °C - 0.39 0.59 - 0.49 0.74 - 0.88 1.32 - 3610 5415 - 714 1071 - 58 87 - 50 - ns - 4.5 - A - 112 - nC - 250 - A/μs VGE = 0 V, IC = 250 μA V V Note (1) I CES includes also opposite leg overall leakage SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse current Irr Diode Recovery charge Qrr Diode peak rate of fall of recovery during tb dI(rec)M/dt TEST CONDITIONS IC = 25 A UNITS nC mJ VGE = 0 V VCC = 30 V f = 1.0 MHz VR = 200 V; IC = 25 A; dI/dt = 200 A/μs pF Revision: 10-Jun-15 Document Number: 94539 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS TJ -40 - 150 TStg -40 - 125 - - 0.64 - - 0.9 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - Clearance (1) Externel shortest distance in air between 2 terminals 5.5 - - Creepage (1) Shortest distance along external surface of the insulating material between 2 terminals 8 - - Operating junction temperature range Storage temperature range °C IGBT Junction to case Diode Case to sink per module RthJC RthCS °C/W mm Weight 66 g Note (1) Standard version only i.e. without optional thermistor 160 VCE , Collector-to Emitter Voltage (V) 2.75 TC Case Temperature (°C) 140 120 100 80 60 40 20 0 IC = 50A 2.25 IC = 25A 1.75 IC = 12.5A 1.25 0 10 20 30 40 50 60 70 80 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) IC Maximum DC Collector Current (A) Fig. 1 - Maximum Collector Current vs. Case Temperature Fig. 2 - Typical Collector to Emitter Voltage vs. Junction Temperature 1 Thermal Response (ZthJC) D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 0.001 D =0.01 Single Pulse (Thermal Response) 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 3 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 10-Jun-15 Document Number: 94539 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors thJC Thermal Response (ZthJC) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode) 1.5 7000 C Cies 5000 oes =C ce +C gc Switching Losses (mJ) 6000 Capacitance (pF) VCC = 480V VGE = 15V TJ = 25°C I C = 25A VGE = 0V, f = 1 MHZ C = C +C , C SHORTED ies ge gc ce C res = C gc 4000 3000 Coes 2000 EOFF 1.0 EON 0.5 1000 Cres 0 0.0 1 10 100 1000 0 10 20 30 40 50 60 VCE (V) RG , Gate Resistance ( Ω ) Fig. 5 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 7 - Typical Switching Losses vs. Gate Resistance 10 IC= 25A RG = 5.0Ω VGE = 15V VCC = 480V VCE = 480V Total Switching Losses (mJ) VGE , Gate-to-Emitter Voltage (V) 16.0 12.0 8.0 4.0 0.0 0 50 100 150 200 Q G, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Emitter Voltage I C = 50A I C = 25A 1 I C = 12.5A 0.1 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 8 - Typical Switching Losses vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94539 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors 140 2.0 VR = 200V TJ = 125°C TJ = 25°C EOFF 120 VCC = 480V 1.5 100 trr- (nC) Switching Losses (mJ) RG = 5.0Ω TJ = 25°C VGE = 15V 1.0 I F = 50A 80 I F = 25A IF = 10A 60 EON 0.5 40 0.0 0 10 20 30 40 50 20 100 60 di f /dt - (A/μs) 1000 IC, Collector Current (A) Fig. 12 - Typical Reverse Recovery Time vs. dIF/dt Fig. 9 - Typical Switching Losses vs. Collector to Emitter Current 30 VGE = 20V TJ = 125° VR = 200V TJ = 125°C TJ = 25°C 25 100 20 I F = 50A I F = 25A Irr- ( A) IC, Collector-to-Emitter Current (A) 1000 I F = 10A 15 10 10 5 SAFE OPERATING AREA 1 1 10 100 A 0 100 1000 1000 di f /dt - (A/μs) VCE, Collector-to-Emitter Voltage (V) Fig. 10 - Turn-Off SOA Fig. 13 - Typical Reverse Recovery Current vs. dIF/dt 1400 1200 1000 10 Qrr- (nC) Instantaneous Forward Current - IF (A) 100 TJ = 150°C TJ = 125°C TJ = 25°C 800 VR = 200V TJ = 125°C TJ = 25°C I F = 50A I F = 25A I F = 10A 600 400 200 1 0.4 0 100 0.8 1.2 1.6 2.0 Forward Voltage Drop - VF (V) 2.4 Fig. 11 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current di f /dt - (A/μs) 1000 Fig. 14 - Typical Stored Charge vs. dIF/dt Revision: 10-Jun-15 Document Number: 94539 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors 10000 di (rec) M/dt- (A /μs) VR = 200V TJ = 125°C TJ = 25°C I F = 50A 1000 I F = 25A I F = 10A A 100 100 1000 di f /dt - (A/μs) Fig. 15 - Typical dI(rec)M/dt vs. dIF/dt 9, 10 4 5 3 6 15, 16 13, 14 2 7 1 8 11, 12 Fig. 16 - Electrical diagram ORDERING INFORMATION TABLE Device code VS- 25 MT 060 W F A PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - Essential part number 4 - Voltage code (060 = 600 V) 5 - Speed/type (W = Warp IGBT) 6 - Circuit configuration (F = Full bridge) 7 - A = Al2O3 DBC substrate 8 - PbF = Lead (Pb)-free Revision: 10-Jun-15 Document Number: 94539 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95245 Revision: 10-Jun-15 Document Number: 94539 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTP DIMENSIONS in millimeters 39.5 ± 0.3 12 ± 0.3 3.0 2.1 Ø 1.1 ± 0.025 1.5 12 ± 0.3 16 ± 0.3 2.5 ± 0.1 5 z detail Use self tapping screw or M 2.5 x X e.g. M 2.5 x 6 or M 2.5 x 8 according to PCB thickness used 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 7.4 48.7 ± 0.3 14.7 15 12 4.2 9 33.2 ± 0.3 6 1.2 4 3 6 5 2 13 10 11 12 5.2 9 22.7 1 45° 5.4 19.8 ± 0.1 8 7 31.8 ± 0.15 Dia. 5 (x 4) Ø 2.1 (x 4) R 2.6 (x 2) 3 27.5 ± 0.3 6 Pins position with tolerance 0.6 11.5 14.7 Note • Unused terminals are not assembled in the package Revision: 01-Jul-15 Document Number: 95175 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000