VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP (Warp Speed IGBT), 114 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC) • Very low junction to case thermal resistance • UL approved file E78996 MTP • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS VCES 600 V VCE(on) typical at VGE = 15 V 2.3 V • Optimized for welding, UPS and SMPS applications IC at TC = 25 °C 114 A • Low EMI, requires less snubbing Speed 30 kHz to 100 kHz Package MTP Circuit Half bridge • Direct mounting to heatsink • PCB solderable terminals • Very low stray inductance design for high speed operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 114 TC = 109 °C 50 Pulsed collector current ICM 350 Peak switching current ILM 350 Diode continuous forward current IF A TC = 109 °C 34 Peak diode forward current IFM 200 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation PD V Any terminal to case, t = 1 min 2500 TC = 25 °C 658 TC = 100 °C 263 W Revision: 10-Jun-15 Document Number: 94468 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leaking current Diode forward voltage drop Gate to emitter leakage current SYMBOL V(BR)CES VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - V VGE = 15 V, IC = 50 A - 2.3 3.15 VGE = 15 V, IC = 100 A - 2.5 3.2 VGE = 15 V, IC = 50 A, TJ = 150 °C - 1.72 2.17 IC = 0.5 mA 3 - 6 VGE = 0 V, IC = 600 A - - 0.4 VGE = 0 V, IC = 600 A, TJ = 150 °C - - 10 IF = 50 A, VGE = 0 V - 1.58 1.80 IF = 50 A, VGE = 0 V, TJ = 150 °C - 1.49 1.68 IF = 100 A, VGE = 0 V, TJ = 25 °C - 1.9 2.17 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 331 385 VCC = 400 V VGE = 15 V - 44 52 - 133 176 Internal gate resistors (see electrical diagram) IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 25 °C - 0.26 - - 1.2 - - 1.46 - - 0.73 - - 1.66 - - 2.39 - - 7100 - - 510 - - 140 - - 82 97 ns - 8.3 10.6 A - 340 514 nC - 137 153 ns - 12.7 14.8 A - 870 1132 nC V mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TEST CONDITIONS IC = 52 A Internal gate resistors (see electrical diagram) IC = 50 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 150 °C VGE = 0 V VCC = 30 V f = 1.0 MHz VCC = 200 V, IC = 50 A dI/dt = 200 A/μs VCC = 200 V, IC = 50 A dI/dt = 200 A/μs TJ = 125 °C nC mJ mJ pF Revision: 10-Jun-15 Document Number: 94468 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R0 (1) T0 = 25 °C - 30 - k Sensitivity index of the thermistor material (1)(2) T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS -40 - 150 -40 - 125 -40 - 125 - - 0.38 - - 0.8 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - External shortest distance in air between 2 terminals 5.5 - - Creepage (1) Shortest distance along the external surface of the insulating material between 2 terminals 8 - - Mounting torque to heatsink A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Notes (1) T , T are thermistor´s temperatures 0 1 R0 1 1 (2) ------- = exp ----- – ------ , temperature in Kelvin T R T 1 0 1 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction temperature range SYMBOL TEST CONDITIONS IGBT, Diode Thermistor Storage temperature range TJ TStg IGBT Junction to case Diode Case to sink per module Clearance RthJC RthCS (1) °C °C/W mm 3 ± 10 % Nm 66 g Weight Note (1) Standard version only i.e. without optional thermistor 100 94468_01 Maximum DC Collector Current (A) IC - Collector to Emitter Current (A) VGE = 15 V 20 μs pulse width 10 TJ = 150 °C TJ = 25 °C 1 0.1 1.0 VCE - Collector to Emitter Voltage (V) Fig. 1 - Typical Output Characteristics 120 100 80 60 40 20 0 10 25 94468_02 50 75 100 125 150 TC - Case Temperature (°C) Fig. 2 - Maximum Collector Current vs. Case Temperature Revision: 10-Jun-15 Document Number: 94468 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors 160 IC = 50 A 2.0 120 100 IF = 50 A, TJ = 25 °C 1.5 80 IC = 20 A 20 40 60 80 100 120 140 60 100 160 TJ - Junction Temperature (°C) 94468_03 1000 dIF/dt (A/µs) 94468_06 Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 3 - Typical Collector to Emitter Voltage vs. Junction Temperature 100 20 VR = 200 V VCC = 400 V IC = 52 A VGE - Gate to Emitter Voltage (V) IF = 50 A, TJ = 125 °C IC = 100 A 1.0 16 IF = 50 A, TJ = 125 °C IRRM (A) 12 8 10 IF = 50 A, TJ = 25 °C 4 1 100 0 0 100 200 300 400 OG - Typical Gate Charge (nC) 94468_04 Fig. 7 - Typical Reverse Recovery Current vs. dIF/dt 2000 100 94468_05 1000 dIF/dt (A/µs) 94468_07 Fig. 4 - Typical Gate Charge vs. Gate to Emitter Votlage VR = 200 V 1500 Qrr (nC) IF - Instantaneous Forward Current (A) VR = 200 V 140 2.5 trr (ns) VCE - Typical Collector to Emitter Voltage (V) 3.0 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C IF = 50 A, TJ = 125 °C 1000 500 IF = 50 A, TJ = 25 °C 1 0.4 0.8 1.2 1.6 2.0 0 100 2.4 VFM - Forward Voltage Drop (V) Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 94468_08 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Revision: 10-Jun-15 Document Number: 94468 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors 3, 4 3, 4 2 T 10 Ω 11 11 12 10 Ω 12 R 5, 6 1 5, 6 10 Ω 9 Thermistor option 9 10 10 Ω 10 7, 8 7, 8 Fig. 9 - Functional Diagram Fig. 10 - Electrical Diagram ORDERING INFORMATION TABLE Device code VS- 50 MT 060 W H T A PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (50 = 50 A) 3 - Essential part number 4 - Voltage rating (060 = 600 V) 5 - Speed/type (W = Warp IGBT) 6 - Circuit configuration (H = Half bridge) 7 - T = Thermistor 8 - A = Al2O3 substrate 9 - Lead (Pb)-free CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95175 Revision: 10-Jun-15 Document Number: 94468 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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