VS-20MT120UFP www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Low diode VF • Square RBSOA • Aluminum nitride DBC • Very low stray inductance design for high speed operation • UL approved file E78996 • Designed and qualified for industrial level MTP • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS PRODUCT SUMMARY • Optimized for welding, UPS and SMPS applications VCES 1200 V IC at TC = 25 °C 40 A VCE(on) 3.29 V Speed 8 kHz to 30 kHz Package MTP Circuit Full bridge • Rugged with ultrafast performance • Outstanding ZVS and hard switching operation • Low EMI, requires less snubbing • Excellent current sharing in parallel operation • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 1200 V TC = 25 °C 40 TC = 106 °C 20 Pulsed collector current ICM 100 Clamped inductive load current ILM 100 A TC = 106 °C 25 Diode continuous forward current IF Diode maximum forward current IFM 100 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation (only IGBT) PD V Any terminal to case, t = 1 min 2500 TC = 25 °C 240 TC = 100 °C 96 W Revision: 10-Jun-15 Document Number: 94505 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current SYMBOL V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES (1) IGES TEST CONDITIONS MIN. TYP. MAX. UNITS 1200 - - V VGE = 0 V, IC = 3 mA (25 °C to 125 °C) - + 1.3 - V/°C VGE = 15 V, IC = 20 A - 3.29 3.59 VGE = 15 V, IC = 40 A - 4.42 4.66 VGE = 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11 VGE = 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70 VGE = 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27 VCE = VGE, IC = 250 μA 4 - 6 VGE = 0 V, IC = 250 μA V VCE = VGE, IC = 3 mA (25 °C to 125 °C) - - 14 - mV/°C VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S VGE = 0 V, VCE = 1200 V, TJ = 25 °C - - 250 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 3.0 VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 2.9 9.0 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 176 264 - 19 30 - 89 134 - 0.92 - - 0.46 - - 1.38 - - 1.29 - - 0.81 - - 2.1 - - 2530 3790 - 344 516 - 78 117 mA Note (1) I CES includes also opposite leg overall leakage SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TEST CONDITIONS IC = 20 A VCC = 600 V VGE = 15 V VCC = 600 V, IC = 20 A, VGE = 15 V, Rg = 5 , L = 1 mH, TJ = 25 °C, energy losses include tail and diode reverse recovery nC mJ VCC = 600 V, IC = 20 A, VGE = 15 V, Rg = 5 , L = 1 mH, TJ = 125 °C, energy losses include tail and diode reverse recovery VGE = 0 V VCC = 30 V f = 1.0 MHz Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 120 A VCC = 1000 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V pF Fullsquare 10 - - μs Revision: 10-Jun-15 Document Number: 94505 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. IC = 20 A - 2.48 2.94 IC = 40 A - 3.28 3.90 IC = 20 A, TJ = 125 °C - 2.44 2.84 IC = 40 A, TJ = 125 °C - 3.45 4.14 IC = 20 A, TJ = 150 °C - 2.21 2.93 - 420 630 μJ - 98 150 ns - 33 50 A MIN. TYP. MAX. UNITS TJ -40 - 150 TStg -40 - 125 - 0.35 0.52 - 0.40 0.61 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - Clearance External shortest distance in air between 2 terminals 5.5 - - Creepage Shortest distance along external surface of the insulating material between 2 terminals 8 - - Mounting torque A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Diode forward voltage drop VFM Reverse recovery energy of the diode Erec Diode reverse recovery time trr Peak reverse recovery current Irr TEST CONDITIONS VGE = 15 V, Rg = 5 , L = 200 μH VCC = 600 V, IC = 20 A TJ = 125 °C UNITS V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink per module Weight RthJC RthCS °C/W mm 3 ± 10 % Nm 66 g Revision: 10-Jun-15 Document Number: 94505 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors 50 1000 40 100 IC (A) IC (A) 30 20 10 10 0 1 0 20 40 60 80 100 120 140 160 10 100 1000 10 000 VCE (V) T C (°C) Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V Fig. 1 - Maximum DC Collector Current vs. Case Temperature 250 100 200 80 150 60 I C E ( A) Ptot ( W ) VGE = 18V 100 VGE VGE VGE VGE = 15V = 12V = 10V = 8.0V 40 20 50 0 0 0 20 40 60 80 100 120 140 0 160 2 4 6 8 10 VCE (V) T C (°C) Fig. 5 - Typical IGBT Output Characteristics TJ = - 40 °C; tp = 80 μs Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 100 80 VGE = 18V IC (A) 100 μs 1 1ms IC E ( A ) 10 μs 10 VGE VGE VGE VGE = 15V = 12V = 10V = 8.0V 60 40 DC 0.1 20 0.01 0 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25 °C; TJ 150 °C 10000 0 2 4 6 8 10 V CE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 80 μs Revision: 10-Jun-15 Document Number: 94505 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors 20 100 VGE VGE VGE VGE VGE 80 = 18V = 15V = 12V = 10V = 8.0V 40 ICE = 10A 16 ICE = 20A 14 ICE = 40A 12 VC E ( V) I CE (A) 60 18 10 8 6 20 4 2 0 0 0 2 4 6 8 10 5 15 20 V GE (V) Fig. 7 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 80 μs Fig. 10 - Typical VCE vs. VGE TJ = 25 °C 20 120 -40°C 25°C 125°C 100 VCE (V) 80 IF (A) 10 VCE (V) 60 40 18 ICE = 10A 16 ICE = 20A 14 ICE = 40A 12 10 8 6 4 20 2 0 0 0.0 1.0 2.0 3.0 4.0 5.0 5 10 V (V) F Fig. 8 - Typical Diode Forward Characteristics tp = 80 μs 20 Fig. 11 - Typical VCE vs. VGE TJ = 125 °C 20 300 18 ICE = 40A 16 ICE = 20A 14 ICE = 10A T J = 25°C 250 T J = 150°C 200 12 IC E ( A ) VCE (V) 15 VGE (V) 10 8 150 100 6 4 50 2 0 0 5 10 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = - 40 °C 20 0 5 10 15 20 VGE (V) Fig. 12 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Revision: 10-Jun-15 Document Number: 94505 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors 1000 2.5 td (off) tf 1.5 Switching time (ns) Energy (mJ) 2 Eon 1 Eoff 100 td (on) tr 10 0.5 0 1 0 10 20 30 40 0 50 10 20 30 50 Fig. 16 - Typical Switching Time vs. Rg TJ = 150 °C; L = 1 mH; VCC = 600 V ICE = 6A; VGE = 15 V Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 1 mH; VCC = 600 V Rg = 5 ; VGE = 15 V 1000 40 tf RG = 5.0Ω td (off) 100 30 RG =10 Ω td (on) IRR (A) Switching time (ns) 40 RG (Ω) I C (A) tr RG =30 Ω 20 RG =50 Ω 10 10 0 1 0 10 20 30 40 0 50 5 10 15 20 25 30 35 IF (A) I C (A) Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 1 mH; VCC = 600 V Rg = 5 ; VGE = 15 V Fig. 17 - Typical Diode Irr vs. IF TJ = 150 °C 40 1.2 1 30 0.8 IRR (A) Energy (mJ) Eon 0.6 20 10 0.4 Eoff 0 0.2 0 10 20 30 40 50 0 10 20 30 40 50 RG (Ω) RG ( Ω) Fig. 15 - Typical Energy Loss vs. Rg TJ = 125 °C; L = 1 mH; VCC = 600 V ICE = 6A; VGE = 15 V Fig. 18 - Typical Diode Irr vs. Rg TJ = 150 °C; IF = 5.0 A 60 Revision: 10-Jun-15 Document Number: 94505 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors 40 10000 Cies 35 Capacitance (pF) IRR (A) 30 25 20 1000 Coes 100 Cres 15 10 10 0 200 400 600 800 0 1000 20 40 80 100 Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C 3.0 16 14 5.0 Ω 2.5 10 Ω 600V 12 30A 2.0 10 20A 30Ω 1.5 50Ω VGE (V) Q R R (μ C ) 60 VCE (V) diF /dt (A/μs) 6 10A 1.0 8 4 0.5 2 0 0.0 0 200 400 600 800 1000 0 1200 40 80 120 160 200 diF /dt (A/μs) Q G , Total Gate Charge (nC) Fig. 20 - Typical Diode Qrr vs. dIF/dt VCC = 400 V; VGE = 15 V; TJ = 150 °C Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 Thermal Res ponse ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 R2 R2 τC τ τ1 τ2 τ2 Ci= τi/Ri Ci= i/Ri 0.001 0.0001 1E-006 0.0001 τ3 τ3 Ri (°C/W) 0.161 0.210 0.147 τi (sec) 0.000759 0.017991 0.06094 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R3 R3 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 10-Jun-15 Document Number: 94505 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors 1 Thermal Respons e ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 τJ R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 τC τ τ3 Ci= τi/Ri Ci= i/Ri 0.001 1E-005 0.0001 τi (sec) 0.001017 0.033081 0.77744 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) 0.238 0.312 0.061 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode) Driver L + - D.U.T. 0 VCC D + C - 1K 900 V D.U.T. Fig. 25 - Gate Charge Circuit (Turn-Off) L Fig. 27 - S.C. SOA Circuit Diode clamp/ D.U.T. L - + 80 V + - -5V D.U.T Rg D.U.T./ driver 1000 V + VCC Rg Fig. 26 - RBSOA Circuit Fig. 28 - Switching Loss Circuit Revision: 10-Jun-15 Document Number: 94505 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFP www.vishay.com Vishay Semiconductors 9, 10 4 5 3 6 15, 16 13, 14 2 7 1 8 11, 12 Fig. 29 - Electrical diagram ORDERING INFORMATION TABLE Device code VS- 20 MT 120 U F P 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Essential part number 4 - Voltage code (120 = 1200 V) 5 - Speed/type (U = Ultrafast IGBT) 6 - Circuit configuration (F = Full bridge) 7 - P = Lead (Pb)-free CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95245 Revision: 10-Jun-15 Document Number: 94505 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP MOSFET/IGBT Full-Bridge DIMENSIONS in millimeters Ø5 Ø 1.1 4 20.5 12 ± 0.5 2.5 31.8 33 3 2 13 4 14 9 10 1 11 15 5 12 8 16 7 6 0.3 ± 0.1 7 6.6 ± 0.1 8 ± 0.1 45° 11.4 ± 0.1 11.3 ± 0.1 27.5 3 ± 0.1 5.3 ± 0.1 3 ± 0.1 7.4 ± 0.1 5.3 ± 0.1 Ø 5.2 x 3 8 ± 0.1 7 ± 0.1 R5.75 (x 2) 7.4 ± 0.1 4.9 ± 0.1 6.6 ± 0.1 39.5 44.5 48.7 0.6 x h1.2 1.3 63.5 ± 0.25 Document Number: 95245 Revision: 24-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000