GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability • Fully isolated package SOT-227 • Speed 4 kHz to 30 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 100 A at 71 °C VCE(on) typical at 100 A, 25 °C 2.36 V • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 134 TC = 80 °C 92 Pulsed collector current ICM 270 Clamped inductive load current ILM 270 Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT Power dissipation, diode RMS isolation voltage Document Number: 93100 Revision: 22-Jul-10 IF A TC = 25 °C 87 TC = 80 °C 59 ± 20 VGE PD PD VISOL TC = 25 °C 463 TC = 80 °C 260 TC = 25 °C 338 TC = 80 °C 190 Any terminal to case, t = 1 min 2500 V W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 1200 - - VGE = 15 V, IC = 50 A - 1.79 2.33 VGE = 15 V, IC = 100 A - 2.36 2.85 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.05 2.62 VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES V VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.8 3.42 VCE = VGE, IC = 500 μA 5 5.8 7 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 15.6 - VGE = 0 V, VCE = 1200 V - 0.5 100 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.052 2 mA V IR = 1 mA IC = 50 A, VGE = 0 V Diode forward voltage drop UNITS 1200 - - - 2.53 3.55 IC = 100 A, VGE = 0 V - 3.32 4.35 IC = 50 A, VGE = 0 V, TJ = 125 °C - 2.66 3.70 mV/°C V IC = 100 A, VGE = 0 V, TJ = 125 °C - 3.7 4.50 VR = VR rated - 4 50 μA TJ = 125 °C, VR = VR rated - 0.6 3 mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 400 - - 120 - - 170 - - 21.9 - - 5.48 - - 27.38 - - 23.6 - SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Energy losses include tail and diode recovery (see fig. 18) 7.65 - 31.25 - - 195 - - 259 - td(off) - 188 - tf - 212 - Etot Turn-on delay time td(on) tr Fall time IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH - Eoff Total switching loss Turn-off delay time IC = 100 A, VCC = 600 V, VGE = 15 V - Turn-off switching loss Rise time TEST CONDITIONS IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 270 A, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V Short circuit safe operating area SCSOA TJ = 150 °C, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr www.vishay.com 2 IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C nC mJ ns Fullsquare 10 μs - 129 161 - 11 14 A - 700 1046 nC - 208 257 ns - 17 21 A - 1768 2698 nC For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] ns Document Number: 93100 Revision: 22-Jul-10 GT100NA120UX "High Side Chopper" IGBT SOT-227 Vishay Semiconductors (Trench IGBT), 100 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C Maximum junction and storage temperature range - - 0.27 - - 0.37 - 0.05 - Mounting torque, 6-32 or M3 screw - - 1.3 Nm Weight - 30 - g IGBT Thermal resistance, junction to case RthJC Diode RthCS 300 160 140 250 TJ = 25 °C 120 200 100 IC (A) Allowable Case Temperature (°C) Thermal resistance, case to sink per module °C/W 80 60 TJ = 125 °C 150 100 40 50 20 0 0 0 20 40 60 80 100 120 140 0 160 1 2 3 4 5 6 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Collector Current Characteristics 0.1 1000 TJ = 125 °C 100 ICES (mA) 0.01 IC (A) 10 1 0.001 TJ = 25 °C 0.1 0.01 1 10 100 1000 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Document Number: 93100 Revision: 22-Jul-10 10 000 0.0001 100 300 500 700 900 1100 VCES (V) Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A 6.5 300 TJ = 25 °C 6.0 250 IF (A) Vgeth (V) TJ = 25 °C 200 5.5 5.0 4.5 150 TJ = 125 °C 100 TJ = 125 °C 50 4.0 0 3.5 0.0002 0.0004 0.0006 0.0008 0.001 0 1 2 3 4 5 6 7 IC (mA) VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 3.0 25 100 A 20 Energy (mJ) VCE (V) 2.5 50 A 2.0 1.5 27 A Eon 10 Eoff 5 1.0 0 10 30 50 70 90 110 130 150 10 20 30 40 50 60 70 80 90 100 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 1000 160 140 tf Switching Time (ns) Allowable Case Temperature (°C) 15 120 100 80 60 40 td(off) td(on) 100 tr 20 0 10 0 20 40 60 80 100 IF - Continuous Forward Current (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature www.vishay.com 4 0 20 40 60 80 100 120 IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93100 Revision: 22-Jul-10 GT100NA120UX "High Side Chopper" IGBT SOT-227 Vishay Semiconductors (Trench IGBT), 100 A 40 250 230 35 Eon 190 25 trr (ns) Energy (mJ) TJ = 125 °C 210 30 20 170 150 TJ = 25 °C 130 15 110 Eoff 10 90 0 0 10 20 30 40 70 100 50 Rg (Ω) 1000 dIF/dt (A/µs) Fig. 13 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 600 V, VGE = 15 V 1000 40 td(on) 35 Switching Time (ns) td(off) 30 TJ = 125 °C 25 Irr (A) tf 20 15 tr TJ = 25 °C 10 5 100 0 10 20 30 40 0 100 50 Rg (Ω) 1000 dIF/dt (A/µs) Fig. 14 - Typical Irr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, IC = 100 A, VGE = 15 V 2650 2400 2150 TJ = 125 °C Qrr (nC) 1900 1650 1400 1150 900 TJ = 25 °C 650 400 100 1000 dIF/dt (A/µs) Fig. 15 - Typical Qrr Diode vs. dIF/dt VR = 200 V, IF = 50 A Document Number: 93100 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93100 Revision: 22-Jul-10 GT100NA120UX "High Side Chopper" IGBT SOT-227 Vishay Semiconductors (Trench IGBT), 100 A R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 19a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 19b - Switching Loss Waveforms Test Circuit Document Number: 93100 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A ORDERING INFORMATION TABLE Device code G T 100 N A 120 U X 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - T = Trench IGBT 3 - Current rating (100 = 100 A) 4 - Circuit configuration (N = High side chopper) 5 - Package indicator (A = SOT-227) 6 - Voltage rating (120 = 1200 V) 7 - Speed/type (U = Ultrafast IGBT) 8 - Diode (X = HEXFRED®) CIRCUIT CONFIGURATION 3 2 1 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93100 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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