GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 50 A at 92 °C VCE(on) typical at 50 A, 25 °C 3.22 V • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 84 TC = 80 °C 57 Pulsed collector current ICM 150 Clamped inductive load current ILM 150 Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT Power dissipation, diode RMS isolation voltage Document Number: 93102 Revision: 22-Jul-10 IF A TC = 25 °C 76 TC = 80 °C 52 ± 20 VGE PD PD VISOL TC = 25 °C 431 TC = 80 °C 242 TC = 25 °C 278 TC = 80 °C 156 Any terminal to case, t = 1 min 2500 V W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 1200 - - VGE = 15 V, IC = 25 A - 2.46 - VGE = 15 V, IC = 50 A - 3.22 2.80 VGE = 15 V, IC = 25 A, TJ = 125 °C - 2.84 3.60 VGE = 15 V, IC = 50 A, TJ = 125 °C - 3.78 3.00 VCE = VGE, IC = 500 μA 4 5 4 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - VGE = 0 V, VCE = 1200 V - 6 50 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 2.0 mA V IR = 1 mA IC = 25 A, VGE = 0 V Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES UNITS 1200 - - - 1.99 2.42 IC = 50 A, VGE = 0 V - 2.53 3.00 IC = 25 A, VGE = 0 V, TJ = 125 °C - 1.96 2.30 V mV/°C V IC = 50 A, VGE = 0 V, TJ = 125 °C - 2.66 3.08 VR = VR rated - 4 50 μA TJ = 125 °C, VR = VR rated - 0.6 3.0 mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time tr Turn-off delay time IC = 50 A, VCC = 600 V, VGE = 15 V IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 25 °C IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) td(off) Fall time tf Reverse bias safe operating area Diode reverse recovery time RBSOA Diode peak reverse current Irr Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - 400 - - 43 - - 187 - - 2.72 - - 1.11 - - 3.83 - - 3.94 - - 2.31 - - 6.25 - - 191 - - 53 - - 223 - - 143 - TJ = 150 °C, IC = 150 A, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V trr Diode recovery charge www.vishay.com 2 TEST CONDITIONS IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C mJ ns Fullsquare - IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V nC 129 161 ns - 11 14 A - 700 1046 nC - 208 257 ns - 17 21 A - 1768 2698 nC For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93102 Revision: 22-Jul-10 GB50LA120UX "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.29 - - 0.45 - 0.05 - Mounting torque, 6-32 or M3 screw - - 1.3 Nm Weight - 30 - g Maximum junction and storage temperature range IGBT Thermal resistance, junction to case RthJC Diode RthCS 160 200 140 175 120 150 100 125 IC (A) Allowable Case Temperature (°C) Thermal resistance, case to sink per module 80 60 TJ = 25 °C 100 TJ = 125 °C 75 40 50 20 25 0 0 10 20 30 40 50 60 70 80 0 90 0 1 2 3 IC - Continuous Collector Current (A) 100 1 ICES (mA) 10 IC (A) 0.1 1 10 100 1000 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Document Number: 93102 Revision: 22-Jul-10 10 000 6 7 8 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.01 5 Fig. 3 - Typical IGBT Collector Current Characteristics 1000 1 4 VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 10 °C/W 0.0001 100 300 500 700 900 1100 VCES (V) Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A 5.5 200 TJ = 25 °C 175 5.0 TJ = 25 °C 125 4.5 IF (A) Vgeth (V) 150 4.0 TJ = 125 °C 100 75 TJ = 125 °C 50 3.5 25 0 3.0 0.0002 0.0004 0.0006 0.0008 0.001 0 3 4 5 6 Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 4 5 3 100 A Energy (mJ) VCE (V) 2 VFM (V) 6 4 50 A 3 Eon 2 Eoff 1 25 A 2 0 10 30 50 70 90 110 130 150 10 20 30 40 50 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 1000 160 140 Switching Time (ns) Allowable Case Temperature (°C) 1 IC (mA) 120 100 80 60 40 td(off) td(on) tf 100 tr 20 0 10 0 www.vishay.com 4 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93102 Revision: 22-Jul-10 GB50LA120UX "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A 12 Vishay Semiconductors 250 230 10 210 190 trr (ns) Energy (mJ) Eon 8 6 4 170 TJ = 125 °C 150 130 TJ = 25 °C 110 Eoff 2 90 0 0 10 20 30 40 70 100 50 1000 Rg (Ω) dIF/dt (A/µs) Fig. 13 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 50 A, L = 500 μH, VCC = 600 V, VGE = 15 V 40 1000 td(off) 30 td(on) TJ = 125 °C 25 tf Irr (A) Switching Time (ns) 35 100 20 15 TJ = 25 °C tr 10 5 10 0 10 20 30 40 0 100 50 1000 Rg (Ω) dIF/dt (A/µs) Fig. 14 - Typical Irr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, IC = 50 A, VGE = 15 V 2650 2400 2150 TJ = 125 °C Qrr (nC) 1900 1650 1400 1150 900 TJ = 25 °C 650 400 100 1000 dIF/dt (A/µs) Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A Document Number: 93102 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93102 Revision: 22-Jul-10 GB50LA120UX "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 19a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 19b - Switching Loss Waveforms Test Circuit Document Number: 93102 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A ORDERING INFORMATION TABLE Device code G B 50 L A 120 U X 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 3 - Current rating (50 = 50 A) 4 - Circuit configuration (L = Low side chopper) 5 - Package indicator (A = SOT-227) 6 - Voltage rating (120 = 1200 V) 7 - Speed/type (U = Ultrafast IGBT) 8 - X = F/W HEXFRED® diode CIRCUIT CONFIGURATION 1 4 3 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93102 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1