VISHAY GB50LA120UX

GB50LA120UX
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
SOT-227
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
BENEFITS
VCES
1200 V
IC DC
50 A at 92 °C
VCE(on) typical at 50 A, 25 °C
3.22 V
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
1200
V
TC = 25 °C
84
TC = 80 °C
57
Pulsed collector current
ICM
150
Clamped inductive load current
ILM
150
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
Document Number: 93102
Revision: 22-Jul-10
IF
A
TC = 25 °C
76
TC = 80 °C
52
± 20
VGE
PD
PD
VISOL
TC = 25 °C
431
TC = 80 °C
242
TC = 25 °C
278
TC = 80 °C
156
Any terminal to case, t = 1 min
2500
V
W
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
V
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GB50LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Collector to emitter breakdown
voltage
Collector to emitter voltage
Gate threshold voltage
VBR(CES)
VCE(on)
VGE(th)
Temperature coefficient of
threshold voltage
VGE(th)/TJ
Collector to emitter leakage current
ICES
Diode reverse breakdown voltage
VBR
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 1 mA
1200
-
-
VGE = 15 V, IC = 25 A
-
2.46
-
VGE = 15 V, IC = 50 A
-
3.22
2.80
VGE = 15 V, IC = 25 A, TJ = 125 °C
-
2.84
3.60
VGE = 15 V, IC = 50 A, TJ = 125 °C
-
3.78
3.00
VCE = VGE, IC = 500 μA
4
5
4
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 10
-
VGE = 0 V, VCE = 1200 V
-
6
50
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.7
2.0
mA
V
IR = 1 mA
IC = 25 A, VGE = 0 V
Diode forward voltage drop
VFM
Diode reverse leakage current
IRM
Gate to emitter leakage current
IGES
UNITS
1200
-
-
-
1.99
2.42
IC = 50 A, VGE = 0 V
-
2.53
3.00
IC = 25 A, VGE = 0 V, TJ = 125 °C
-
1.96
2.30
V
mV/°C
V
IC = 50 A, VGE = 0 V, TJ = 125 °C
-
2.66
3.08
VR = VR rated
-
4
50
μA
TJ = 125 °C, VR = VR rated
-
0.6
3.0
mA
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
td(off)
Fall time
tf
Reverse bias safe operating area
Diode reverse recovery time
RBSOA
Diode peak reverse current
Irr
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
-
400
-
-
43
-
-
187
-
-
2.72
-
-
1.11
-
-
3.83
-
-
3.94
-
-
2.31
-
-
6.25
-
-
191
-
-
53
-
-
223
-
-
143
-
TJ = 150 °C, IC = 150 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
trr
Diode recovery charge
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TEST CONDITIONS
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
mJ
ns
Fullsquare
-
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
nC
129
161
ns
-
11
14
A
-
700
1046
nC
-
208
257
ns
-
17
21
A
-
1768
2698
nC
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93102
Revision: 22-Jul-10
GB50LA120UX
"Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 40
-
150
°C
-
-
0.29
-
-
0.45
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
Maximum junction and
storage temperature range
IGBT
Thermal resistance, junction to case
RthJC
Diode
RthCS
160
200
140
175
120
150
100
125
IC (A)
Allowable Case Temperature (°C)
Thermal resistance, case to sink per module
80
60
TJ = 25 °C
100
TJ = 125 °C
75
40
50
20
25
0
0
10
20
30
40
50
60
70
80
0
90
0
1
2
3
IC - Continuous Collector Current (A)
100
1
ICES (mA)
10
IC (A)
0.1
1
10
100
1000
VCE (V)
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Document Number: 93102
Revision: 22-Jul-10
10 000
6
7
8
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0.01
5
Fig. 3 - Typical IGBT Collector Current Characteristics
1000
1
4
VCE (V)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
10
°C/W
0.0001
100
300
500
700
900
1100
VCES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
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GB50LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
5.5
200
TJ = 25 °C
175
5.0
TJ = 25 °C
125
4.5
IF (A)
Vgeth (V)
150
4.0
TJ = 125 °C
100
75
TJ = 125 °C
50
3.5
25
0
3.0
0.0002
0.0004
0.0006
0.0008
0.001
0
3
4
5
6
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 8 - Typical Diode Forward Characteristics
4
5
3
100 A
Energy (mJ)
VCE (V)
2
VFM (V)
6
4
50 A
3
Eon
2
Eoff
1
25 A
2
0
10
30
50
70
90
110
130
150
10
20
30
40
50
TJ (°C)
IC (A)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
1000
160
140
Switching Time (ns)
Allowable Case Temperature (°C)
1
IC (mA)
120
100
80
60
40
td(off)
td(on)
tf
100
tr
20
0
10
0
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10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
IF - Continuous Forward Current (A)
IC (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93102
Revision: 22-Jul-10
GB50LA120UX
"Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
12
Vishay Semiconductors
250
230
10
210
190
trr (ns)
Energy (mJ)
Eon
8
6
4
170
TJ = 125 °C
150
130
TJ = 25 °C
110
Eoff
2
90
0
0
10
20
30
40
70
100
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 50 A, L = 500 μH,
VCC = 600 V, VGE = 15 V
40
1000
td(off)
30
td(on)
TJ = 125 °C
25
tf
Irr (A)
Switching Time (ns)
35
100
20
15
TJ = 25 °C
tr
10
5
10
0
10
20
30
40
0
100
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC = 50 A, VGE = 15 V
2650
2400
2150
TJ = 125 °C
Qrr (nC)
1900
1650
1400
1150
900
TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A
Document Number: 93102
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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GB50LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93102
Revision: 22-Jul-10
GB50LA120UX
"Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
Vishay Semiconductors
R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 19b - Switching Loss Waveforms Test Circuit
Document Number: 93102
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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GB50LA120UX
Vishay Semiconductors "Low Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ORDERING INFORMATION TABLE
Device code
G
B
50
L
A
120
U
X
1
2
3
4
5
6
7
8
1
-
Insulated Gate Bipolar Transistor (IGBT)
2
-
B = IGBT Generation 5
3
-
Current rating (50 = 50 A)
4
-
Circuit configuration (L = Low side chopper)
5
-
Package indicator (A = SOT-227)
6
-
Voltage rating (120 = 1200 V)
7
-
Speed/type (U = Ultrafast IGBT)
8
-
X = F/W HEXFRED® diode
CIRCUIT CONFIGURATION
1
4
3
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93102
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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