VS-GB75NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Higher switching frequency up to 150 kHz • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V IC DC 70 A at 87 °C VCE(on) typical at 70 A, 25 °C 2.31 V IF DC 70 A at 86 °C Package SOT-227 Circuit Chopper high side switch BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current SYMBOL VCES IC Pulsed collector current ICM Clamped inductive load current ILM Diode continuous forward current IF Single pulse forward current IFSM Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode PD RMS isolation voltage TEST CONDITIONS VISOL TC = 25 °C TC = 80 °C MAX. UNITS 600 V 109 75 120 120 TC = 25 °C A 113 TC = 80 °C 75 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 390 ± 20 TC = 25 °C 447 TC = 80 °C 250 TC = 25 °C 236 TC = 80 °C 132 Any terminal to case, t = 1 min 2500 V W V Revision: 20-May-16 Document Number: 95857 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 600 - - VGE = 15 V, IC = 35 A - 1.73 2.0 VGE = 15 V, IC = 70 A - 2.31 - VGE = 15 V, IC = 35 A, TJ = 125 °C - 2.14 - VGE = 15 V, IC = 70 A, TJ = 125 °C - 3.0 - 2.7 4.5 5.4 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10.8 - VGE = 0 V, VCE = 600 V - 5 50 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.17 - mA V VCE = VGE, IC = 500 μA IR = 1 mA 600 - - IF = 35 A, VGE = 0 V - 1.67 2.33 IF = 70 A, VGE = 0 V - 1.96 - IF = 35 A, VGE = 0 V, TJ = 125 °C - 1.23 - IF = 70 A, VGE = 0 V, TJ = 125 °C - 1.55 - UNITS V mV/°C V VR = 600 V - 0.1 50 μA TJ = 125 °C, VR = 600 V - 0.04 - mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 320 - - 42 - SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc - 110 Turn-on switching loss Eon - 0.33 - Turn-off switching loss Eoff - 0.46 - Total switching loss Etot - 0.79 - Turn-on switching loss Eon - 0.51 - Turn-off switching loss Eoff - 0.56 - Total switching loss Etot - 1.07 - Turn-on delay time td(on) - 166 - Rise time Turn-off delay time Fall time tr IC = 50 A, VCC = 400 V, VGE = 15 V IC = 70 A, VCC = 300 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 25 °C IC = 70 A, VCC = 300 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery td(off) tf - 44 - - 188 - - 53 - nC mJ ns TJ = 150 °C, IC = 120 A, Rg = 22 Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - Diode reverse recovery time trr - Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C - 64 - ns - 4.5 - A 144 - nC 136 - ns - 12 - A - 807 - nC Revision: 20-May-16 Document Number: 95857 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range IGBT Junction to case TEST CONDITIONS MIN. TYP. MAX. UNITS -40 - 150 °C TJ, TStg RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque 0.28 0.53 - 0.05 - - 30 - °C/W g - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) SOT-227 150 100 TJ = 25 °C 75 TJ = 125 °C TJ = 150 °C 50 25 0 0 1.0 2.0 3.0 4.0 Allowable Case Temperature (°C) 160 125 IC (A) - Torque to terminal Case style 140 120 DC 100 80 60 40 20 0 5.0 0 20 40 60 80 100 120 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 4.5 150 VGE = 12 V VGE = 15 V VGE = 18 V 125 100 4.0 100 A 3.5 VGE = 9 V VCE (V) IC (A) - 75 70 A 3.0 2.5 35 A 50 2.0 25 1.5 0 1.0 0 1.0 2.0 3.0 4.0 5.0 6.0 20 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 20-May-16 Document Number: 95857 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors 70 10 VCE = 20 V 60 TJ = 150 °C 1 TJ = 125 °C 40 ICES (mA) IC (A) 50 TJ = 25 °C 30 TJ = 125 °C 0.1 0.01 TJ = 25 °C 20 0.001 10 0.0001 0 2 3 4 5 6 7 8 9 100 200 300 400 500 600 VCES (V) VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 5.0 150 125 4.5 TJ = 150 °C TJ = 25 °C 4.0 IF (A) VGEth (V) 100 TJ = 125 °C 75 3.5 TJ = 25 °C 50 TJ = 125 °C 3.0 25 2.5 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 IC (mA) VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 160 Allowable Case Temperature (°C) 1000 IC (A) 100 10 1 10 100 1000 140 120 DC 100 80 60 40 20 0 0 20 40 60 80 100 120 VCE (V) IF - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 20-May-16 Document Number: 95857 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors 0.6 1000 Switching Time (ns) 0.5 Energy (mJ) 0.4 E on 0.3 E off 0.2 td(off) td(on) tr 100 tf 0.1 0 10 10 20 30 40 50 60 70 80 0 5 10 15 IC (A) 20 25 30 35 40 45 50 Rg (Ω) Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 300 V, IC = 70 A, VGE = 15 V, L = 500 μH Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 160 1000 150 TJ = 125 °C 130 td(off) td(on) tf 100 120 trr (ns) Switching Time (ns) 140 110 100 90 80 70 TJ = 25 °C 60 tr 50 40 10 10 20 30 40 50 60 70 100 80 200 300 400 500 IC (A) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 200 V, IF = 50 A 3 24 22 2.5 20 E on 18 TJ = 125 °C 16 Irr (A) Energy (mJ) 2 1.5 E off 1 14 12 10 TJ = 25 °C 8 6 0.5 4 2 0 0 0 5 10 15 20 25 30 35 40 45 50 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 300 V, IC = 70 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 200 V, IF = 50 A Revision: 20-May-16 Document Number: 95857 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors 1400 1200 TJ = 125 °C Qrr (nC) 1000 800 600 400 TJ = 25 °C 200 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode) Revision: 20-May-16 Document Number: 95857 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 75 N A 60 U F 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (75 = 70 A) 5 - Circuit configuration (N = high side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = ultrafast IGBT) 9 - Diode (F = FRED Pt® diode) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 Lead Assignment 2 High side chopper IGBT N 4 3 1 2 1 4 Revision: 20-May-16 Document Number: 95857 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75NA60UF www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter PACKAGING INFORMATION Revision: 20-May-16 Document Number: 95857 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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