VS-GB55LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 1200 V BENEFITS IC DC 50 A at 92 °C VCE(on) typical at 50 A, 25 °C 3.3 V Package SOT-227 Circuit Chopper low side switch • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 84 TC = 80 °C 57 Pulsed collector current ICM 150 Clamped inductive load current ILM 150 Diode continuous forward current IF Single pulse forward current IFSM Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage PD VISOL TC = 25 °C 87 TC = 80 °C 59 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C A 310 ± 20 TC = 25 °C 431 TC = 80 °C 242 TC = 25 °C 338 TC = 80 °C 190 Any terminal to case, t = 1 min 2500 V W V Revision: 20-May-16 Document Number: 95856 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 500 μA TEST CONDITIONS 1200 - - UNITS VGE = 15 V, IC = 25 A - 2.5 2.8 VGE = 15 V, IC = 50 A - 3.3 - VGE = 15 V, IC = 25 A, TJ = 125 °C - 3.0 - VGE = 15 V, IC = 50 A, TJ = 125 °C - 4.03 - 4.0 5.5 7.1 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12.9 - VGE = 0 V, VCE = 1200 V - 8 50 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.15 - mA V VCE = VGE, IC = 500 μA IR = 1 mA 1200 - - IF = 25 A, VGE = 0 V - 2.11 2.42 V mV/°C IF = 50 A, VGE = 0 V - 2.72 - IF = 25 A, VGE = 0 V, TJ = 125 °C - 2.04 - IF = 50 A, VGE = 0 V, TJ = 125 °C - 2.83 - VR = 1200 V - 4 50 μA TJ = 125 °C, VR = 1200 V - 0.8 - mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 400 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Reverse bias safe operating area tr TEST CONDITIONS IC = 50 A, VCC = 600 V, VGE = 15 V IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 25 °C IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery td(off) tf RBSOA - 43 - - 187 - - 1.87 - - 0.83 - - 2.7 - - 3.43 - - 1.29 - - 4.72 - - 147 - - 35 - - 186 - - 119 - TJ = 150 °C, IC = 150 A, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V nC mJ ns Fullsquare - 129 - ns - 11 - A Qrr - 710 - nC trr - 208 - ns Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Diode reverse recovery time Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C - 17 - A - 1768 - nC Revision: 20-May-16 Document Number: 95856 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range IGBT Junction to case TEST CONDITIONS TJ, TStg MIN. TYP. MAX. UNITS -40 - 150 °C RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque - 0.29 - 0.37 - 0.05 - - 30 - °C/W g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Case style SOT-227 160 200 140 175 120 150 100 125 DC IC (A) Allowable Case Temperature (°C) - 80 TJ = 25 °C 100 60 75 40 50 20 25 TJ = 125 °C 0 0 0 10 20 30 40 50 60 70 80 90 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Output Characteristics, VGE = 15V 1 1000 100 ICES (mA) 0.1 IC (A) 10 1 TJ = 125 °C 0.01 TJ = 25 °C 0.001 0.1 0.0001 0.01 1 10 100 1000 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V 10 000 200 400 600 800 1000 1200 VCES (V) Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Revision: 20-May-16 Document Number: 95856 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors 7.5 200 175 6.5 TJ = 25 °C 150 125 IF (A) VGEth (V) 5.5 4.5 TJ = 125 °C 3.5 TJ = 125 °C 100 TJ = 25 °C 75 50 2.5 25 1.5 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 3.0 4.0 5.0 6.0 7.0 VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 4.0 5 3.0 100 A Energy (mJ) VCE (V) 2.0 IC (mA) 6 4 50 A 3 Eon 2.0 Eoff 1.0 25 A 0 2 10 30 50 70 90 110 130 150 10 20 30 40 50 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 1 160 140 120 Switching Time (ns) Allowable Case Temperature (°C) 1.0 100 DC 80 60 40 td(off) td(on) 0.1 tf tr 20 0 0.01 0 20 40 60 80 100 10 20 30 40 50 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum Diode Continuous Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 Revision: 20-May-16 Document Number: 95856 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors 8 270 7 250 230 6 190 trr (ns) Energy (mJ) 210 5 Eon 4 3 TJ = 125 °C 170 150 130 2 Eoff TJ = 25 °C 110 1 90 0 70 0 10 20 30 40 100 50 1000 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 11 - Typical IGBT Energy Losses vs. Rg TJ = 125 °C, IC = 50 A, VCC = 600 V, VGE = 15 V, L = 500 μH 40 1000 30 td(off) 100 TJ = 125 °C 25 td(on) Irr (A) Switching Time (ns) 35 tf 20 15 TJ = 25 °C 10 tr 5 0 10 0 10 20 30 40 100 50 1000 dIF/dt (A/μs) Rg (Ω) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, IC = 50 A, VCC = 600 V, VGE = 15 V, L = 500 μH Fig. 14 - Typical Irr Diode vs. dIF/dt VR = 200 V, IF = 50 A 2650 2400 2150 TJ = 125 °C Qrr (nC) 1900 1650 1400 1150 900 TJ = 25 °C 650 400 100 1000 dIF/dt (A/μs) Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A Revision: 20-May-16 Document Number: 95856 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) Revision: 20-May-16 Document Number: 95856 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 55 L A 120 U X 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (55 = 50 A) 5 - Circuit configuration (L = low side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = ultrafast IGBT) 9 - Diode (X = HEXFRED® diode) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 1 Low side chopper IGBT Lead Assignment 4 3 1 2 4 L 3 2 Revision: 20-May-16 Document Number: 95856 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB55LA120UX www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter PACKAGING INFORMATION Revision: 20-May-16 Document Number: 95856 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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