VS-GB75LA60UF Datasheet

VS-GB75LA60UF
www.vishay.com
Vishay Semiconductors
"Low Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Higher switching frequency up to 150 kHz
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
SOT-227
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
600 V
IC DC
70 A at 87 °C
VCE(on) typical at 70 A, 25 °C
2.31 V
IF DC
70 A at 86 °C
Package
SOT-227
Circuit
Chopper low side switch
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
600
V
TC = 25 °C
109
TC = 80 °C
75
Pulsed collector current
ICM
120
Clamped inductive load current
ILM
120
Diode continuous forward current
IF
Single pulse forward current
IFSM
Gate to emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TC = 25 °C
113
TC = 80 °C
75
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
A
390
± 20
TC = 25 °C
447
TC = 80 °C
250
TC = 25 °C
236
TC = 80 °C
132
Any terminal to case, t = 1 min
2500
V
W
V
Revision: 20-May-16
Document Number: 95858
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
VGE(th)/TJ
Collector to emitter leakage current
ICES
Diode reverse breakdown voltage
VBR
Diode forward voltage drop
VFM
Diode reverse leakage current
IRM
Gate to emitter leakage current
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 1 mA
600
-
-
VGE = 15 V, IC = 35 A
-
1.73
2.0
VGE = 15 V, IC = 70 A
-
2.31
-
VGE = 15 V, IC = 35 A, TJ = 125 °C
-
2.14
-
VGE = 15 V, IC = 70 A, TJ = 125 °C
-
3.0
-
2.7
4.5
5.4
-
-10.8
-
VCE = VGE, IC = 500 μA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
UNITS
V
mV/°C
VGE = 0 V, VCE = 600 V
-
5
50
μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
0.17
-
mA
V
IR = 1 mA
600
-
-
IF = 35 A, VGE = 0 V
-
1.67
2.33
IF = 70 A, VGE = 0 V
-
1.96
-
IF = 35 A, VGE = 0 V, TJ = 125 °C
-
1.23
-
IF = 70 A, VGE = 0 V, TJ = 125 °C
-
1.55
-
VR = 600 V
-
0.1
50
μA
TJ = 125 °C, VR = 600 V
-
0.04
-
mA
VGE = ± 20 V
-
-
± 200
nA
MIN.
TYP.
MAX.
UNITS
-
320
-
-
42
-
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
-
110
-
Turn-on switching loss
Eon
-
0.33
-
Turn-off switching loss
Eoff
-
0.46
-
Total switching loss
Etot
-
0.79
-
Turn-on switching loss
Eon
-
0.51
-
Turn-off switching loss
Eoff
-
0.56
-
Total switching loss
Etot
-
1.07
-
Turn-on delay time
td(on)
-
166
-
-
44
-
-
188
-
-
53
-
Rise time
Turn-off delay time
Fall time
tr
IC = 50 A, VCC = 400 V, VGE = 15 V
IC = 70 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 
L = 500 μH, TJ = 25 °C
IC = 70 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7  
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
td(off)
tf
nC
mJ
ns
TJ = 150 °C, IC = 120 A, Rg = 22 
Reverse bias safe operating area
RBSOA
Fullsquare
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V
Diode reverse recovery time
-
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs, 
VR = 200 V, TJ = 125 °C
64
-
ns
-
4.5
-
A
-
144
-
nC
ns
-
136
-
-
12
-
A
-
807
-
nC
Revision: 20-May-16
Document Number: 95858
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
IGBT
Junction to case
TEST CONDITIONS
TJ, TStg
RthJC
Diode
Case to heatsink
RthCS
Flat, greased surface
UNITS
150
°C
-
-
0.28
-
-
0.53
°C/W
0.05
-
30
-
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
g
SOT-227
150
100
TJ = 25 °C
75
TJ = 125 °C
TJ = 150 °C
50
25
0
0
1.0
2.0
3.0
4.0
Allowable Case Temperature (°C)
160
125
IC (A)
MAX.
-
-
Case style
140
120
DC
100
80
60
40
20
0
5.0
0
20
40
60
80
100
120
VCE (V)
IC - Continuous Collector Current (A)
Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
4.5
150
VGE = 12 V
VGE = 15 V
VGE = 18 V
125
100
4.0
100 A
3.5
VGE = 9 V
VCE (V)
IC (A)
TYP.
-40
-
Weight
Mounting torque
MIN.
75
70 A
3.0
2.5
35 A
50
2.0
25
1.5
0
1.0
0
1.0
2.0
3.0
4.0
5.0
6.0
20
40
60
80
100
120
140
160
VCE (V)
TJ (°C)
Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 20-May-16
Document Number: 95858
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70
10
VCE = 20 V
60
TJ = 150 °C
1
TJ = 125 °C
40
ICES (mA)
IC (A)
50
TJ = 25 °C
30
TJ = 125 °C
0.1
0.01
TJ = 25 °C
20
0.001
10
0.0001
0
2
3
4
5
6
7
8
9
100
200
300
400
500
600
VCES (V)
VGE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
5.0
150
125
4.5
TJ = 150 °C
TJ = 25 °C
4.0
IF (A)
VGEth (V)
100
TJ = 125 °C
75
3.5
TJ = 25 °C
50
TJ = 125 °C
3.0
25
2.5
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IC (mA)
VFM (V)
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 9 - Typical Diode Forward Characteristics
160
Allowable Case Temperature (°C)
1000
IC (A)
100
10
1
10
100
1000
140
120
DC
100
80
60
40
20
0
0
20
40
60
80
100
120
VCE (V)
IF - Continuous Forward Current (A)
Fig. 7 - IGBT Reverse BIAS SOA,
TJ = 150 °C, VGE = 15 V
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 20-May-16
Document Number: 95858
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VS-GB75LA60UF
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0.6
1000
Switching Time (ns)
0.5
Energy (mJ)
0.4
E on
0.3
E off
0.2
td(off)
td(on)
tr
100
tf
0.1
0
10
10
20
30
40
50
60
70
80
0
5
10
15
IC (A)
20
25
30
35
40
45
50
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 70 A, VGE = 15 V, L = 500 μH
Fig. 11 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
160
1000
150
TJ = 125 °C
130
td(off)
td(on)
tf
100
120
trr (ns)
Switching Time (ns)
140
110
100
90
80
70
TJ = 25 °C
60
tr
50
40
10
10
20
30
40
50
60
70
100
80
200
300
400
500
IC (A)
dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 50 A
3
24
22
2.5
20
E on
18
TJ = 125 °C
16
Irr (A)
Energy (mJ)
2
1.5
E off
1
14
12
10
TJ = 25 °C
8
6
0.5
4
2
0
0
0
5
10
15
20
25
30
35
40
45
50
100
200
300
400
500
Rg (Ω)
dIF/dt (A/μs)
Fig. 13 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 70 A, VGE = 15 V, L = 500 μH
Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
Revision: 20-May-16
Document Number: 95858
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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1400
1200
TJ = 125 °C
Qrr (nC)
1000
800
600
400
TJ = 25 °C
200
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 50 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
Revision: 20-May-16
Document Number: 95858
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ORDERING INFORMATION TABLE
Device code
VS-
G
B
75
L
A
60
U
F
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
B = IGBT Generation 5
4
-
Current rating (75 = 70 A)
5
-
Circuit configuration (L = low side chopper)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (60 = 600 V)
8
-
Speed/type (U = ultrafast IGBT)
9
-
Diode (F = FRED Pt® diode)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
4
Low side chopper IGBT
Lead Assignment
4
3
1
2
3
L
2
1
Revision: 20-May-16
Document Number: 95858
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
PACKAGING INFORMATION
Revision: 20-May-16
Document Number: 95858
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Revision: 02-Oct-12
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Document Number: 91000