VS-GB150YG120NT www.vishay.com Vishay Semiconductors IGBT ECONO3 Module, 150 A FEATURES • Gen 5 non punch through (NPT) technology • 10 μs short circuit capability • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive temperature coefficient • Copper baseplate • Operating frequencies 8 kHz to 60 kHz • Low stray inductance design • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ECONO3 4 pack BENEFITS • Benchmark efficiency for SMPS appreciation in particular HF welding PRODUCT SUMMARY VCES 1200 V IC(DC) at TC = 57 °C 150 A VCE(on) typ. at 150 A 3.45 V Package ECONO3 4 pack Circuit 4 pack with thermistor • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current ICM Clamped inductive load current ILM Diode continuous forward current IF Diode maximum forward current IFSM Gate to emitter voltage VGE Maximum power dissipation IGBT PD TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 182 TC = 80 °C 124 370 370 TC = 25 °C TC = 80 °C A 113 78 730 ± 20 TC = 25 °C 892 TC = 80 °C 500 V W MODULE TJ -55 to +150 Storage temperature range Operating junction temperature range TStg -40 to +125 RMS isolation voltage VISOL Any terminal to case, t = 1 s 3500 °C V Revision: 22-Apr-16 Document Number: 93631 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150YG120NT www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Collector to emitter voltage V(BR)CES VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leaking current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 500 μA TEST CONDITIONS 1200 - - VGE = 15 V, IC = 150 A - 3.45 4.0 VGE = 15 V, IC = 200 A - 3.9 - VGE = 15 V, IC = 150 A, TJ = 125 °C - 3.87 - VGE = 15 V, IC = 200 A, TJ = 125 °C - 4.42 - 4.1 4.9 6.5 - -12.3 - VCE = VGE, IC = 1.5 mA VCE = VGE, IC = 1 mA, (25 °C to 125 °C) UNITS V mV/°C VGE = 0 V, VCE = 1200 V - 21 120 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 1.57 - mA IF = 100 A - 2.73 3.5 IF = 150 A - 3.18 - IF = 100 A, TJ = 125 °C - 2.8 - IF = 150 A, TJ = 125 °C - 3.4 - VGE = ± 20 V - - ± 440 nA MIN. TYP. MAX. UNITS V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg IC = 150 A - 1260 - Gate to emitter charge (turn-on) Qge - 130 - Gate to collector charge (turn-on) Qgc VCC = 600 V VGE = 15 V Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time IC = 150 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 25 °C VCC = 600 V, IC = 150 A, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 125 °C IC = 150 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 125 °C tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 370 A, Rg = 4.7 , VGE = 15 V to 0, VCC = 600 V, VP = 1200 V Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 900 V, VP = 1200 V, Rg = 10 , VGE = 15 V to 0 Diode reverse recovery time Diode peak reverse current Diode recovery charge TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C trr Irr Qrr VR = 400 V, IF = 50 A dI/dt = 200 A/μs - 500 - - 5.86 - - 4.7 - - 10.56 - - 7.74 - - 7.2 - - 14.94 - - 474 - - 89 - - 520 - - 101 - 10 - - - 210 - - 345 - - 13.8 - - 23.2 - - 1448 - - 3990 - nC mJ ns μs ns A nC Revision: 22-Apr-16 Document Number: 93631 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150YG120NT www.vishay.com Vishay Semiconductors INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS R25 TC = 25 °C 5000 R100 TC = 100 °C 493 ± 5 % R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % K 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s UNITS Resistance B-value B25/50 Maximum operating temperature THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. IGBT - Junction to case (per switch) RthJC - - 0.14 DIODE - Junction to case (per diode) RthJC - - 0.3 Case to sink, flat, greased surface (per module) RthJS Mounting torque (M5) Weight - 0.015 - 3.0 - 6.0 Nm - 290 - g 300 240 TJ = 25 °C IC (A) 180 150 TJ = 125 °C 120 90 60 30 0 Allowable Case Temperature (°C) 160 270 210 140 120 100 DC 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 VCE (V) 40 60 80 100 120 140 160 180 200 Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 300 240 20 IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V 270 °C/W 4.9 VGE = 12 V VGE = 15 V VGE = 18 V 4.6 200 A 4.3 210 IC (A) 150 VGE = 9 V 120 VCE (V) 4.0 180 150 A 3.7 3.4 100 A 90 3.1 60 2.8 30 2.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 22-Apr-16 Document Number: 93631 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150YG120NT www.vishay.com Vishay Semiconductors 300 10 VCE = 20 V 270 TJ = 150 °C 240 1 TJ = 125 °C ICES (mA) 210 IC (A) 180 150 120 0.1 0.01 TJ = 25 °C TJ = 125 °C 90 60 0.001 TJ = 25 °C 30 0.0001 0 3 4 5 6 7 8 9 10 11 0 200 400 800 1000 1200 VCES (V) VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 5.5 300 5.2 270 4.9 240 TJ = 25 °C 4.6 210 4.3 TJ = 25 °C 180 IF (A) VGE(th) (V) 600 4.0 3.7 TJ = 125 °C 150 120 TJ = 125 °C 3.4 90 3.1 60 2.8 30 2.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 IC (mA) VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 160 Allowable Case Temperature (°C) 1000 IC (A) 100 10 Chip level Module level 1 10 100 1000 10 000 140 120 100 DC 80 60 40 20 0 0 20 40 60 80 100 120 VCE (V) IF - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 22-Apr-16 Document Number: 93631 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150YG120NT www.vishay.com Vishay Semiconductors 10 000 11 10 td(off) Switching Time (ns) 9 Energy (mJ) 8 7 Eon 6 5 Eoff 4 3 2 td(on) 1000 tr 100 tf 1 0 10 40 60 80 0 100 120 140 160 180 200 220 5 10 15 IC (A) td(on) tf trr (ns) Switching Time (ns) td(off) 100 tr 10 80 30 35 40 45 50 Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 600 V, IC = 150 A, VGE = 15 V, L = 500 μH 1000 60 25 Rg (Ω) Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 40 20 460 440 420 400 380 360 340 320 300 280 260 240 220 200 180 160 140 120 100 100 120 140 160 180 200 220 TJ = 125 °C TJ = 25 °C 100 200 300 400 500 IC (A) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 400 V, IF = 50 A 45 40 37 40 34 35 31 25 20 Irr (A) Energy (mJ) TJ = 125 °C 28 30 Eon 25 22 TJ = 25 °C 19 16 15 13 10 10 Eoff 5 7 4 0 0 5 10 15 20 25 30 35 40 45 50 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 600 V, IC = 150 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 400 V, IF = 50 A Revision: 22-Apr-16 Document Number: 93631 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150YG120NT Qrr (nC) www.vishay.com Vishay Semiconductors 4700 4400 4100 3800 3500 3200 2900 2600 2300 2000 1700 1400 1100 800 500 200 TJ = 125 °C TJ = 25 °C 100 200 300 400 500 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt, Vrr = 400 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode) Revision: 22-Apr-16 Document Number: 93631 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150YG120NT www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 150 Y G 120 N T 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - B = IGBT Generation 5 NPT 4 - Current rating (150 = 150 A) 5 - Circuit configuration (Y = 4 pack) 6 - Package indicator (G = ECONO3) 7 - Voltage rating (120 = 1200 V) 8 - Speed / type (N = ultrafast with reduced diode, speed 8 kHz to 60 kHz) 9 - NTC Thermistor CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 23 24 13 14 QB1 QB3 3 4 4 pack with thermistor 19 20 21 22 Y QB2 9 10 QB4 1 2 15 16 17 18 7 8 25 26 5 Ntc 6 11 12 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95686 Revision: 22-Apr-16 Document Number: 93631 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors ECONO3 4 Pack DIMENSIONS in millimeters and inches 22 21 20 19 18 17 16 15 23 24 14 13 25 26 12 11 1 2 3 4 5 6 7 8 9 10 Revision: 21-Apr-16 Document Number: 95686 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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