VS-GB100YG120NT www.vishay.com Vishay Semiconductors IGBT ECONO3 Module, 100 A FEATURES • Gen 5 non punch through (NPT) technology • 10 μs short circuit capability • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Operating frequencies 8 kHz to 60 kHz • Low stray inductance design • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ECONO3 4 pack BENEFITS PRODUCT SUMMARY • Benchmark efficiency for SMPS appreciation in particular HF welding VCES 1200 V VCE(on) typ. at 100 A 3.52 V IC(DC) at TC = 64 °C 100 A Package ECONO3 4 pack Circuit 4 pack with thermistor • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heat sink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 127 TC = 80 °C 87 Pulsed collector current ICM 260 Clamped inductive load current ILM 260 Diode continuous forward current IF TC = 25 °C 71 TC = 80 °C 49 Diode maximum forward current IFSM 370 Gate to emitter voltage VGE ± 20 Power dissipation, IGBT PD TC = 25 °C 625 TC = 80°C 350 A V W MODULE TJ -55 to +150 Storage temperature range Operating junction temperature range TStg -40 to +125 RMS isolation voltage VISOL Any terminal to case, t = 1 s 3500 °C V Revision: 22-Apr-16 Document Number: 93659 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100YG120NT www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Zero gate voltage collector current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES Forward voltage drop VFM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 1200 - - VGE = 15 V, IC = 50 A - 2.67 - VGE = 15 V, IC = 100 A - 3.52 4.0 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.88 - VGE = 15 V, IC = 100 A, TJ = 125 °C - 3.9 - 4.1 5.3 6.5 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12.2 - VGE = 0 V, VCE = 1200 V - 6.5 80 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.85 - mA VCE = VGE, IC = 1 mA V mV/°C IF = 50 A, VGE = 0 V - 2.59 3.15 IF = 100 A, VGE = 0 V - 3.38 - IF = 50 A, VGE = 0 V, TJ = 125 °C - 2.69 - IF = 100 A, VGE = 0 V, TJ = 125 °C - 3.74 - VGE = ± 20 V - - ± 440 nA MIN. TYP. MAX. UNITS - 400 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) QG Gate-to-emitter charge (turn-on) QGE Gate-to-collector charge (turn-on) QGC Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS IC = 50 A, VCC = 600 A, VGE = 15 V - 43 - - 187 - IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 25 °C - 2.86 - - 3.43 - - 6.29 - IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 125 °C - 4.32 - - 4.48 - IC = 100 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 L = 500 μH, TJ = 125 °C tf Reverse bias safe operating area RBSOA Short circuit safe operating area SCSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TJ = 150 °C, IC = 260 A, VGE = 15 V to 0 V, Rg = 4.7 , VCC = 600 V, Vp = 1200 V TJ = 150 °C, Rg = 10 , VGE = 15 V to 0 V, VCC = 900 V, Vp = 1200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V - 8.8 - - 275 - - 71 - - 305 - - 116 - 10 - - TJ = 25 °C - 190 - TJ = 125 °C - 293 - TJ = 25 °C - 12 - TJ = 125 °C - 18.6 - TJ = 25 °C - 1140 - TJ = 125 °C - 2725 - nC mJ ns μs ns A nC Revision: 22-Apr-16 Document Number: 93659 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100YG120NT www.vishay.com Vishay Semiconductors INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL R25 R100 Resistance B-value B25/50 TEST CONDITIONS TC = 25 °C TC = 100 °C TYP. 5000 493 ± 5 % R2 = R25 exp [B25/50 (1/T2 - 1/(298.15K))] 3375 ± 5 % K 220 2 8 °C mW/°C s UNITS Maximum operating temperature Dissipation constant Thermal time constant UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. IGBT - junction to case (per switch) RthJC - - 0.2 DIODE - junction to case (per diode) RthJC - - 0.46 Case to sink, flat, greased surface (per module) RthJS Mounting torque (M5) Weight - 0.015 - 3.0 - 6.0 Nm - 285 - g 160 180 160 140 IC (A) TJ = 25 °C 100 TJ = 125 °C 80 60 40 20 0 Allowable Case Temperature (°C) 200 120 140 120 100 DC 80 60 40 20 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 20 40 60 80 100 120 140 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 6.0 200 180 160 5.5 VGE = 12 V VGE = 15 V VGE = 18 V 200 A 5.0 140 100 VGE = 9 V 80 VCE (V) 4.5 120 IC (A) °C/W 100 A 4.0 3.5 50 A 3.0 60 40 2.5 20 2.0 1.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125°C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 22-Apr-16 Document Number: 93659 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100YG120NT www.vishay.com Vishay Semiconductors 200 10 TJ = 150 °C VCE = 20 V 180 1 160 140 ICES (mA) TJ = 125 °C IC (A) 120 100 80 60 0.1 0.01 TJ = 125 °C TJ = 25 °C 40 0.001 TJ = 25 °C 20 0.0001 0 3 4 5 6 7 8 9 10 11 0 200 400 800 1000 1200 VCES (V) VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 6.0 200 5.7 180 5.4 160 TJ = 25 °C 5.1 140 4.8 120 IF (A) VGEth (V) 600 4.5 4.2 TJ = 25 °C 100 TJ = 125 °C 80 TJ = 125 °C 3.9 60 3.6 40 3.3 20 3.0 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 IC (mA) VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 160 Allowable Case Temperature (°C) 1000 IC (A) 100 10 Chip level Module level 1 10 100 1000 10 000 140 120 100 DC 80 60 40 20 0 0 10 20 30 40 50 60 70 80 VCE (V) IF - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 22-Apr-16 Document Number: 93659 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100YG120NT www.vishay.com Vishay Semiconductors 9 10000 8 Switching Time (ns) Eoff 7 Energy (mJ) 6 Eon 5 4 3 2 1000 td(off) tr td(on) 100 tf 1 10 0 20 40 60 80 100 120 140 160 0 5 10 15 1000 td(on) tf trr (ns) Switching Time (ns) td(off) 100 tr 10 60 80 35 40 45 50 100 120 140 400 380 360 340 320 300 280 260 240 220 200 180 160 140 120 100 TJ = 125 °C TJ = 25 °C 100 160 200 300 400 500 IC (A) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 400 V, IF = 50 A 24 22 20 18 Eon 16 14 Irr (A) Energy (mJ) 30 Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 40 25 Rg (Ω) IC (A) 20 20 12 10 Eoff 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 30 28 26 24 22 20 18 16 14 12 10 8 6 4 TJ = 125 °C TJ = 25 °C 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 400 V, IF = 50 A Revision: 22-Apr-16 Document Number: 93659 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100YG120NT www.vishay.com Vishay Semiconductors 3500 3200 2900 TJ = 125 °C 2600 Qrr (nC) 2300 2000 1700 1400 1100 TJ = 25 °C 800 500 200 100 200 300 400 500 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt, Vrr = 400 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.001 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode) Revision: 22-Apr-16 Document Number: 93659 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100YG120NT www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 100 Y G 120 N T 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - B = IGBT Gen 5 NPT 4 - Current rating (100 = 100 A) 5 - Circuit configuration (Y = 4 pack) 6 - Package indicator (G = ECONO3) 7 - Voltage rating (120 = 1200 V) 8 - Speed / type (N = ultrafast with reduced diode, speed 8 kHz to 60 kHz) 9 - NTC thermistor CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 23 24 13 14 QB1 QB3 3 4 4 pack with thermistor 19 20 21 22 Y QB2 9 10 QB4 1 2 15 16 17 18 7 8 25 26 5 Ntc 6 11 12 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95686 Revision: 22-Apr-16 Document Number: 93659 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors ECONO3 4 Pack DIMENSIONS in millimeters and inches 22 21 20 19 18 17 16 15 23 24 14 13 25 26 12 11 1 2 3 4 5 6 7 8 9 10 Revision: 21-Apr-16 Document Number: 95686 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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