VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC) • Al2O3 BDC • Very low stay inductance design for high speed operation • UL approved file E78996 MTP • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V BENEFITS VCE(on) typical at VGE = 15 V 2.1 V • Optimized for welding, UPS and SMPS applications IC at TC = 78 °C 70 A Speed 30 kHz to 150 kHz Package MTP Circuit Half bridge • Lower conduction losses and switching losses • Low EMI, requires less snubbing • Direct mounting to heatsink • PCB solderable terminals ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL TEST CONDITIONS VCES Continuous collector current IC TC = 25 °C TC = 78 °C MAX. UNITS 600 V 100 70 Pulsed collector current ICM 300 Peak switching current ILM 300 Diode continuous forward current IF Peak diode forward current TC = 78 °C IFM Gate to emitter voltage VGE RMS isolation voltage VISOL Maximum power dissipation, IGBT PD A 53 200 ± 20 Any terminal to case, t = 1 min 2500 TC = 25 °C 347 TC = 100 °C 139 V W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL V(BR)CES VCE(on) VGE(th) Collector to emitter leaking current ICES Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. UNITS V VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 70 A - 2.1 2.4 VGE = 15 V, IC = 140 A - 2.8 3.4 VGE = 15 V, IC = 70 A, TJ = 150 °C - 2.7 3 IC = 0.5 mA 3 - 6 VGE = 0 V, IC = 600 V - - 0.7 VGE = 0 V, IC = 600 V, TJ = 150 °C - - 10 VGE = ± 20 V - - ± 250 V mA nA Revision: 10-Jun-15 Document Number: 94469 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time tdon Rise time tr Turn-off delay time tdoff Fail time tf Turn-on delay time tdon Rise time tr Turn-off delay time tdoff Fail time tf Input capacitance Cies Output capacitane Coes Reverse transfer capacitance Cres Reverse BIAS safe operating area RBSOA TEST CONDITIONS MIN. TYP. MAX. IC = 70 A VCC = 480 V VGE = 15 V - 460 690 - 160 250 - 70 130 Rg = 10 IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 25 °C - 1.1 - - 0.9 - - 2 - - 1.27 - - 1.13 - - 2.4 - - 314 - - 49 - - 308 - - 68 - - 312 - Rg = 10 IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 150 °C Rg = 10 IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery Rg = 10 IC = 70 A, VCC = 480 V, VGE = 15 V, L = 200 μH Energy losses include tail and diode reverse recovery, TJ = 150 °C VGE = 0 V VCC = 30 V f = 1.0 MHz - 50 - - 320 - - 78 - - 8000 - - 790 - - 110 - TJ = 150 °C, IC = 300 A VCC = 400 V, VP = 600 V Rg = 22 , VGE = + 15 V to 0 V UNITS nC mJ ns pF Fullsquare THERMISTOR SPECIFICATIONS PARAMETER SYMBOL Resistance R0 Sensitivity index of the thermistor material (1) (1)(2) TEST CONDITIONS MIN. TYP. MAX. UNITS T0 = 25 °C - 30 - k T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS 2.1 Notes (1) T , T are thermistor´s temperatures 0 1 R0 1 (2) ------ = exp --1 --- – ----- , temperature in Kelvin T T R 1 0 1 DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Diode forward voltage drop SYMBOL VFM Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TEST CONDITIONS IC = 70 A, VGE = 0 V - 1.64 IC = 140 A, VGE = 0 V - 2.1 2.4 IC = 70 A, VGE = 0 V, TJ = 150 °C - 1.69 1.9 - 96 126 VCC = 200 V, IC = 70 A dI/dt = 200 A/μs - 9.4 12.8 A - 440 750 nC - 140 194 ns - 14 19 A - 950 1700 nC VCC = 200 V, IC = 70 A dI/dt = 200 A/μs TJ = 125 °C V ns Revision: 10-Jun-15 Document Number: 94469 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range IGBT, Diode MIN. TYP. MAX. -40 - 150 -40 - 125 -40 - 125 TJ Thermistor Storage temperature range TStg IGBT Junction to case TEST CONDITIONS RthJC Diode Case to sink per module RthCS Heatsink compound thermal conductivity = 1 W/mK - - 0.36 - - 0.8 - 0.06 - A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Mounting torque to heatsink VCE - Collector to Emitter Voltage (V) IC - Collector to Emitter Current (A) Weight 1000 VGE = 15 V 100 TJ = 25 °C TJ = 150 °C 10 1 0.0 1.0 2.0 3.0 4.0 3 ± 10 % Nm 66 g IC = 140 A 3.5 3.0 IC = 70 A 2.5 2.0 IC = 30 A 1.5 1.0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) 94469_03 Fig. 3 - Typical Collector to Emitter Voltage vs. Junction Temperature 16 160 VGE - Gate to Emitter Voltage (V) Allowable Case Temperature (°C) °C/W 4.0 Fig. 1 - Typical Output Characteristics 140 120 100 DC 80 60 40 20 14 12 10 8 6 4 VCC = 480 V 2 0 0 0 94469_02 °C 4.5 5.0 VCE - Collector to Emitter Voltage (V) 94469_01 UNITS 20 40 60 80 100 0 120 Maximum DC Collector Current (A) Fig. 2 - Maximum Collector Current vs. Case Temperature 94469_04 200 400 600 800 1000 OG - Total Gate Charge (nC) Fig. 4 - Typical Gate Charge vs. Gate to Emitter Votlage Revision: 10-Jun-15 Document Number: 94469 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70MT060WHTAPbF Vishay Semiconductors 1000 1400 1200 1000 100 Energy (μJ) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C 10 Eon 800 600 Eoff 400 TJ = 25 °C 200 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VFM - Forward Voltage Drop (V) 94469_05 0 3.5 80 1000 10 150 °C tf 1.0 0.1 0.01 25 °C td(off) 100 tr td(on) 0.001 0.0001 200 10 300 400 500 0 600 VCES - Collector to Emitter Voltage (V) 94469_06 4.0 25 °C 3.5 125 °C 3.0 2.5 0.1 Fig. 7 - Typical Gate Threshold Voltage 60 80 350 300 250 200 150 100 50 0 0 1.0 IC (mA) 40 Fig. 9 - Switching Time vs. IC IC - Collector to Emitter Current (mA) 4.5 20 IC - Collector to Emitter Current (A) 94469_09 Fig. 6 - Typical Zero Gate Voltage Collector Current 94469_07 60 Fig. 8 - Typical Energy Losses vs. IC ( TJ = 150 °C) Switching Time (ns) ICES - Collector to Emitter Current (mA) 40 IC - Collector to Emitter Current (A) 94469_08 Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current VGEth (V) 20 94469_10 100 200 300 400 500 600 700 IC - Collector to Emitter Voltage (V) Fig. 10 - Reverse BIAS SOA, TJ = 150 °C Revision: 10-Jun-15 Document Number: 94469 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors 160 40 VR = 200 V VR = 200 V 35 140 30 120 IRRM (A) trr (ns) IF = 70 A, 125 °C 100 25 IF = 70 A, 125 °C 20 IF = 70 A, 25 °C 15 IF = 70 A, 25 °C 80 10 60 100 5 100 1000 dIF/dt (A/µs) 94469_11 1000 dIF/dt (A/μs) 94469_12 Fig. 11 - Typical Reverse Recovery Time vs. dIF/dt 2000 Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt VR = 200 V 1800 1600 Qrr (nC) 1400 IF = 70 A, 125 °C 1200 1000 800 IF = 70 A, 25 °C 600 400 200 100 1000 dIF/dt (A/μs) 94469_13 ZthJC - Thermal Impedance (°C/W) Fig. 13 - Typical Stored Charge vs. dIF/dt 1 0.1 0.01 0.001 0.00001 94469_14 Single pulse (thermal resistance) 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.1 1.0 10 t1 - Rectangular Pulse Duration (s) Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Revision: 10-Jun-15 Document Number: 94469 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70MT060WHTAPbF ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1.0 0.1 D = 0.75 D = 0.50 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t1 - Rectangular Pulse Duration (s) 94469_15 Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (Diode) 3, 4 3, 4 2 T 10 Ω 11 11 12 10 Ω 12 R 5, 6 1 5, 6 10 Ω 9 Thermistor option 9 10 10 Ω 10 7, 8 7, 8 Fig. 16 - Electrical Diagram Fig. 17 - Functional Diagram ORDERING INFORMATION TABLE Device code VS- 70 MT 060 W H T A PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (70 = 70 A) 3 - Essential part number 4 - Voltage rating (060 = 600 V) 5 - Speed/type (W = Warp IGBT) 6 - Circuit configuration (H = Half bridge) 7 - T = Thermistor 8 - A = Al2O3 DBC substrate 9 - Lead (Pb)-free Revision: 10-Jun-15 Document Number: 94469 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95175 Revision: 10-Jun-15 Document Number: 94469 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTP DIMENSIONS in millimeters 39.5 ± 0.3 12 ± 0.3 3.0 2.1 Ø 1.1 ± 0.025 1.5 12 ± 0.3 16 ± 0.3 2.5 ± 0.1 5 z detail Use self tapping screw or M 2.5 x X e.g. M 2.5 x 6 or M 2.5 x 8 according to PCB thickness used 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 7.4 48.7 ± 0.3 14.7 15 12 4.2 9 33.2 ± 0.3 6 1.2 4 3 6 5 2 13 10 11 12 5.2 9 22.7 1 45° 5.4 19.8 ± 0.1 8 7 31.8 ± 0.15 Dia. 5 (x 4) Ø 2.1 (x 4) R 2.6 (x 2) 3 27.5 ± 0.3 6 Pins position with tolerance 0.6 11.5 14.7 Note • Unused terminals are not assembled in the package Revision: 01-Jul-15 Document Number: 95175 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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