VS-GP400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 400 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 • Designed for industrial level Dual INT-A-PAK Low Profile • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V BENEFITS IC DC at TC = 103 °C 400 A • Increased operating efficiency VCE(on) (typical) at 400 A, 25 °C 1.30 V Speed DC to 1 kHz • Performance optimized as output inverter stage for TIG welding machines Package DIAP low profile Circuit Half bridge • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Collector to emitter voltage VCES Continuous collector current IC (1) Pulsed collector current ICM n/a Clamped inductive load current ILM n/a Diode continuous forward current Gate to emitter voltage Maximum power dissipation (IGBT) RMS isolation voltage Operating junction and storage temperature range IF TC = 25 °C 758 TC = 80 °C 525 TC = 25 °C 219 TC = 80 °C 145 TC = 25 °C 1563 TC = 80 °C 875 VGE PD VISOL TJ, TSTG ± 20 Any terminal to case (VRMS t = 1 s, TJ = 25 °C) A V W 3500 V -40 to +150 °C Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 20-May-16 Document Number: 95768 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP400TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage SYMBOL VBR(CES) VCE(on) MIN. TYP. MAX. VGE = 0 V, IC = 500 μA TEST CONDITIONS 600 - - VGE = 15 V, IC = 200 A - 1.13 1.24 VGE = 15 V, IC = 400 A - 1.30 1.52 VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.03 - VGE = 15 V, IC = 400 A, TJ = 125 °C Gate threshold voltage Temperature coefficient of threshold voltage VGE(th) VGE(th)/T UNITS V - 1.26 - 4.9 5.9 8.8 VCE = VGE, IC = 9.6 mA, TJ = 125 °C - 3.2 - VCE = VGE, IC = 9.6 mA, (25 °C to 125 °C) - -27 - mV/°C VCE = VGE, IC = 9.6 mA Forward transconductance gfe VCE = 20 V, IC = 50 A - 74 - S Transfer characteristics VGE VCE = 20 V, IC = 400 A - 10.7 - V Collector to emitter leakage current ICES Diode forward voltage drop Gate to emitter leakage current VFM IGES VGE = 0 V, VCE = 600 V - 5 200 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.5 - mA IFM = 200 A - 1.42 1.55 IFM = 400 A - 1.76 1.98 IFM = 200 A, TJ = 125 °C - 1.43 - IFM = 400 A, TJ = 125 °C - 1.88 - VGE = ± 20 V - - ± 750 nA UNITS V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching energy SYMBOL MIN. TYP. MAX. Eon TEST CONDITIONS - 6.3 - Turn-off switching energy Eoff - 45 - Total switching energy Etot - 51.3 - Turn-on delay time td(on) - 633 - Rise time Turn-off delay time Fall time Turn-on switching loss IC = 400 A, VCC = 300 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 25 °C tr - 254 - td(off) - 715 - tf - 490 - Eon - 7.2 - Turn-off switching loss Eoff - 74 - Total switching loss Etot - 81.2 - Turn-on delay time td(on) Rise time Turn-off delay time Fall time Reverse bias safe operating area IC = 400 A, VCC = 300 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 125 °C - 595 - tr - 250 - td(off) - 950 - tf - 865 - RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TJ = 150 °C, IC = n/a, VCC = 300 V VP = 600 V, Rg = 1.5 VGE = 15 V to 0 V, L = 500 μH IF = 400 A, Rg = 1.5 VCC = 300 V, TJ = 25 °C IF = 400 A, Rg = 1.5 VCC = 300 V, TJ = 125 °C mJ ns mJ ns Fullsquare - 123 - ns - 107 - A - 8.1 - μC - 167 - ns - 140 - A - 14.7 - μC Revision: 20-May-16 Document Number: 95768 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP400TD60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - - 150 °C - 0.08 - - 0.4 - 0.05 - case to heatsink: M6 screw 4 - 6 case to terminal 1, 2, 3: M5 screw 2 - 4 - 270 - Operating junction and storage temperature range IGBT Junction to case per leg RthJC Diode Case to sink per module RthCS Mounting torque 160 800 140 700 120 600 100 500 IC (A) Allowable Case Temperature (°C) Weight DC 80 Nm g VGE = 12 V VGE = 15 V VGE = 18 V 400 60 300 40 200 20 100 0 °C/W VGE = 9 V 0 0 200 400 600 0.4 800 0.6 0.8 IC - Continuous Collector Current (A) 1.0 1.2 1.4 1.6 1.8 2.0 VCE (V) Fig. 3 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 1 - Maximum IGBT Continuous Collector Current vs. Case Temperature 800 1.6 700 1.5 600 A 1.4 600 VCE (V) IC (A) 400 A 1.3 500 400 300 TJ = 150 °C 200 1.2 1.1 300 A 1.0 TJ = 25 °C 0.9 TJ = 125 °C 100 0.8 0 100 A 0.7 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 20-May-16 Document Number: 95768 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP400TD60S www.vishay.com Vishay Semiconductors 800 800 VGE = 20 V 700 600 600 500 500 IF (A) IC (A) 700 400 TJ = 125 °C 300 TJ = 25 °C 400 TJ = 125 °C 300 200 200 TJ = 25 °C TJ = 150 °C 100 100 0 0 4 5 6 7 8 9 10 11 12 13 0 0.4 0.8 1.2 VGE (V) 2.0 2.4 2.8 VF (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical Diode Forward Characteristics 160 Allowable Case Temperature (°C) 8 7 TJ = 25 °C 6 VGEth (V) 1.6 5 4 TJ = 125 °C 3 2 1 0 0 2 4 6 8 140 120 100 DC 80 60 40 20 0 0 10 30 60 90 120 150 180 210 240 IC (mA) IF - Continuous Forward Current (A) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Maximum Diode Continuous Forward Current vs. Case Temperature 10 80 TJ = 150 °C Eoff 70 1 60 Energy (mJ) ICES (mA) TJ = 125 °C 0.1 0.01 50 40 30 20 0.001 TJ = 25 °C 10 Eon 0 0.0001 100 200 300 400 500 600 VCES (V) Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current 0 100 200 300 400 500 IC (A) Fig. 10 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Revision: 20-May-16 Document Number: 95768 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP400TD60S www.vishay.com Vishay Semiconductors 10000 260 220 1000 200 tf td(on) trr (ns) Switching Time (ns) 240 td(off) TJ = 125 °C 180 160 100 140 tr TJ = 25 °C 120 10 100 0 100 200 300 400 500 200 400 600 800 1000 1200 1400 1600 1800 IC (A) dIF/dt (A/μs) Fig. 11 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt VCC = 300 V, IF = 400 A 100 170 150 Eoff 80 TJ = 125 °C 110 60 Irr (A) Energy (mJ) 130 40 90 TJ = 25 °C 70 Eon 50 20 30 0 10 0 5 10 15 20 25 30 200 400 600 800 1000 1200 1400 1600 1800 Rg (Ω) dIF/dt (A/μs) Fig. 12 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 300 V, IC = 400 A, VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt VCC = 300 V, IF = 400 A 10000 18 14 TJ = 125 °C 12 td(off) Qrr (μC) Switching Time (ns) 16 tf 1000 10 8 6 td(on) TJ = 25 °C 4 2 tr 100 0 0 5 10 15 20 25 30 Rg (Ω) Fig. 13 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 300 V, IC = 400 A, VGE = 15 V, L = 500 μH 200 400 600 800 1000 1200 1400 1600 1800 dIF/dt (A/μs) Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt VCC = 300 V, IF = 400 A Revision: 20-May-16 Document Number: 95768 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP400TD60S www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (Diode) Revision: 20-May-16 Document Number: 95768 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP400TD60S www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G P 400 T D 60 S 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - P = trench PT IGBT technology 4 - Current rating (400 = 400 A) 5 - Circuit configuration (T = Half bridge) 6 - Package indicator (D = Dual INT-A-PAK low profile) 7 - Voltage rating (60 = 600 V) 8 - Speed / type (S = standard speed IGBT) CIRCUIT CONFIGURATION 3 4 5 1 6 7 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95435 Revision: 20-May-16 Document Number: 95768 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile DIMENSIONS in millimeters 2.8 x 0.5 21.9 ± 0.5 15 ± 0.5 7.5 13.5 7.2 16 ± 0.5 M5 screwing depth max. 8 48 ± 0.5 12 15 ± 0.4 27 ± 0.4 28 ± 0.5 48 ± 0.3 62 ± 1 28 ± 0.5 Ø6 .4 93 ± 0.3 108 ± 1 Revision: 11-Nov-14 Document Number: 95435 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000