VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP (Ultrafast NPT IGBT), 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Low diode VF • Square RBSOA • Al2O3 DBC substrate • Very low stray inductance design for high speed operation • UL approved file E78996 MTP • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS VCES 1200 V IC at TC = 96 °C 20 A VCE(on) (typical) at IC = 20 A, 25 °C 3.29 V Speed 8 kHz to 30 kHz Package MTP Circuit Full bridge • Optimized for welding, UPS and SMPS applications • Rugged with ultrafast performance • Outstanding ZVS and hard switching operation • Low EMI, requires less snubbing • Excellent current sharing in parallel operation • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current SYMBOL TEST CONDITIONS VCES IC TC = 96 °C MAX. UNITS 1200 V 20 Pulsed collector current ICM 100 Clamped inductive load current ILM 100 Diode maximum forward current IFM 100 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation (only IGBT) Operating junction temperature range PD TJ A V Any terminal to case, t = 1 min 2500 TC = 25 °C 240 TC = 100 °C 96 W -40 to +150 °C Revision: 10-Jun-15 Document Number: 94470 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current SYMBOL V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES (1) IGES TEST CONDITIONS MIN. TYP. MAX. UNITS 1200 - - V VGE = 0 V, IC = 3 mA (25 to 125 °C) - +1.3 - V/°C VGE = 15 V, IC = 20 A - 3.29 3.59 VGE = 15 V, IC = 40 A - 4.42 4.66 VGE = 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11 VGE = 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70 VGE = 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27 VCE = VGE, IC = 250 μA 4 - 6 VGE = 0 V, IC = 250 μA V VCE = VGE, IC = 3 mA (25 to 125 °C) - -14 - mV/°C VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S VGE = 0 V, VCE = 1200 V, TJ = 25 °C - - 250 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 3.0 VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 2.9 9.0 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 176 264 - 19 30 - 89 134 - 0.513 0.770 - 0.402 0.603 - 0.915 1.373 - 0.930 1.395 - 0.610 0.915 - 1.540 2.310 - 2530 3790 - 344 516 - 78 117 mA Note (1) I CES includes also opposite leg overall leakage SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TEST CONDITIONS IC = 20 A VCC = 600 V VGE = 15 V VCC = 600 V, IC = 20 A, VGE = 15 V, Rg = 5 , L = 200 μH, TJ = 25 °C, energy losses include tail and diode reverse recovery nC mJ VCC = 600 V, IC = 20 A, VGE = 15 V, Rg = 5 , L = 200 μH, TJ = 125 °C, energy losses include tail and diode reverse recovery VGE = 0 V VCC = 30 V f = 1.0 MHz Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 120 A VCC = 1000 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, Vp = 1200 V Rg = 5 , VGE = + 15 V to 0 V pF Fullsquare 10 - - μs Revision: 10-Jun-15 Document Number: 94470 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. IC = 20 A - 2.48 2.94 IC = 40 A - 3.28 3.90 IC = 20 A, TJ = 125 °C - 2.44 2.84 IC = 40 A, TJ = 125 °C - 3.45 4.14 IC = 20 A, TJ = 150 °C - 2.21 2.93 - 420 630 μJ - 98 150 ns - 33 50 A MIN. TYP. MAX. UNITS TJ -40 - 150 TStg -40 - 125 - 0.53 0.64 - 0.69 0.83 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - Clearance External shortest distance in air between 2 terminals 5.5 - - Creepage Shortest distance along external surface of the insulating material between 2 terminals 8 - - Mounting torque A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Diode forward voltage drop VFM Reverse recovery energy of the diode Erec Diode reverse recovery time trr Peak reverse recovery current Irr TEST CONDITIONS VGE = 15 V, Rg = 5 , L = 200 μH VCC = 600 V, IC = 20 A TJ = 125 °C UNITS V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT Junction to case Diode Case to sink per module Weight RthJC RthCS °C/W mm 3 ± 10 % Nm 66 g Revision: 10-Jun-15 Document Number: 94470 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 160 1000 140 DC 100 I C (A) TC (°C) 120 100 10 80 60 1 40 0 5 10 15 20 10 25 100 1000 10000 VCE (V) IC (A) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 250 Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V 100 200 80 150 60 ICE (A) Ptot (W) VGE = 18V 100 VGE VGE VGE VGE = 15V = 12V = 10V = 8.0V 40 20 50 0 0 0 20 40 60 80 0 100 120 140 160 2 4 6 8 10 VCE (V) TC (°C) Fig. 5 - Typical IGBT Output Characteristics TJ = - 40 °C; tp = 80 μs Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 100 80 VGE = 18V IC (A) 100 µs 1 1ms ICE (A) 10 µs 10 VGE VGE VGE VGE = 15V = 12V = 10V = 8.0V 60 40 DC 0.1 20 0.01 0 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25 °C; TJ 150 °C 10000 0 2 4 6 8 10 VCE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 80 μs Revision: 10-Jun-15 Document Number: 94470 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com 20 100 VGE VGE VGE VGE VGE 80 = 18V 18 = 15V = 12V = 10V = 8.0V 60 VCE (V) ICE (A) Vishay Semiconductors 40 16 ICE = 10A ICE = 20A 14 ICE = 40A 12 10 8 6 20 4 2 0 0 0 2 4 6 8 10 5 15 20 VGE (V) Fig. 7 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 80 μs Fig. 10 - Typical VCE vs. VGE TJ = 25 °C 20 120 -40°C 25°C 125°C 100 VCE (V) 80 IF (A) 10 VCE (V) 60 40 18 ICE = 10A 16 ICE = 20A 14 ICE = 40A 12 10 8 6 4 20 2 0 0 0.0 1.0 2.0 3.0 4.0 5.0 5 15 20 VGE (V) Fig. 8 - Typical Diode Forward Characteristics tp = 80 μs Fig. 11 - Typical VCE vs. VGE TJ = 125 °C 20 300 18 16 ICE = 40A ICE = 20A 14 ICE = 10A T J = 25°C 250 T J = 150°C 200 12 ICE (A) VCE (V) 10 VF (V) 10 8 150 100 6 4 50 2 0 0 5 10 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = - 40 °C 20 0 5 10 15 20 VGE (V) Fig. 12 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Revision: 10-Jun-15 Document Number: 94470 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 2400 1000 2000 Energy (µJ) Swiching Time (ns) EON 1600 1200 EOFF 800 tdOFF tF 100 tdON tR 400 0 10 0 10 20 30 40 50 0 10 20 30 40 50 60 RG (Ω) IC (A) Fig. 16 - Typical Switching Time vs. Rg TJ = 150 °C; L = 1.4 mH; VCE = 400 V ICE = 5.0A; VGE = 15 V Fig. 13 - Typical Energy Loss vs. IC TJ = 150 °C; L = 1.4 mH; VCE = 400 V Rg = 5 ; VGE = 15 V 1000 40 RG = 5.0Ω RG = 10 Ω tdOFF IRR (A) Swiching Time (ns) 30 tF 100 RG = 30 Ω 20 RG = 50 Ω tdON 10 tR 0 10 0 10 20 30 40 0 50 5 10 15 Fig. 14 - Typical Switching Time vs. IC TJ = 150 °C; L = 1.4 mH; VCE = 400 V Rg = 100 ; VGE = 15 V 25 30 35 Fig. 17 - Typical Diode Irr vs. IF TJ = 150 °C 40 2000 1600 EON 30 1200 IRR (A) Energy (µJ) 20 IF (A) IC (A) EOFF 20 800 10 400 0 0 0 10 20 30 40 50 RG (Ω) Fig. 15 - Typical Energy Loss vs. Rg TJ = 150 °C; L = 1.4 mH; VCE = 400 V ICE = 5.0A; VGE = 15 V 60 0 10 20 30 40 50 60 RG (Ω) Fig. 18 - Typical Diode Irr vs. Rg TJ = 150 °C; IF = 5.0 A Revision: 10-Jun-15 Document Number: 94470 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 40 10000 Cies 35 Capacitance (pF) IRR (A) 30 25 20 1000 Coes 100 Cres 15 10 10 0 200 400 600 800 0 1000 20 40 60 80 100 diF /dt (A/µs) VCE (V) Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 3.0 16 14 5.0Ω 2.5 10 Ω 600V 12 30A 1.5 10 20A 30Ω 50Ω VGE (V) Q RR (µC) 2.0 8 6 10A 1.0 4 0.5 2 0 0.0 0 200 400 600 800 1000 0 1200 40 80 120 160 200 Q G , Total Gate Charge (nC) diF /dt (A/µs) Fig. 20 - Typical Diode Qrr VCC = 400 V; VGE = 15 V; TJ = 150 °C Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 D = 0.5 Thermal Response (ZthJC) D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 0.001 D =0.01 Single Pulse (Thermal Response) 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 10-Jun-15 Document Number: 94470 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 1 D = 0.5 Thermal Response (ZthJC) D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D =0.01 Single Pulse (Thermal Response) 0.001 0.0001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode) Driver L + - D.U.T. 0 VCC D + C - 1K 900 V D.U.T. Fig. 25 - Gate Charge Circuit (Turn-Off) L Fig. 27 - S.C. SOA Circuit Diode clamp/ D.U.T. L - + 80 V + - -5V D.U.T Rg D.U.T./ driver 1000 V + VCC Rg Fig. 26 - RBSOA Circuit Fig. 28 - Switching Loss Circuit Revision: 10-Jun-15 Document Number: 94470 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors 9, 10 4 5 3 6 15, 16 13, 14 2 7 1 8 11, 12 Fig. 29 - Electrical diagram ORDERING INFORMATION TABLE Device code VS- 20 MT 120 U F A PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Essential part number 4 - Voltage code (120 = 1200 V) 5 - Speed/type (U = Ultrafast IGBT) 6 - Circuit configuration (F = Full bridge) 7 - A = Al2O3 DBC substrate 8 - Lead (Pb)-free CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95245 Revision: 10-Jun-15 Document Number: 94470 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP MOSFET/IGBT Full-Bridge DIMENSIONS in millimeters Ø5 Ø 1.1 4 20.5 12 ± 0.5 2.5 31.8 33 3 2 13 4 14 9 10 1 11 15 5 12 8 16 7 6 0.3 ± 0.1 7 6.6 ± 0.1 8 ± 0.1 45° 11.4 ± 0.1 11.3 ± 0.1 27.5 3 ± 0.1 5.3 ± 0.1 3 ± 0.1 7.4 ± 0.1 5.3 ± 0.1 Ø 5.2 x 3 8 ± 0.1 7 ± 0.1 R5.75 (x 2) 7.4 ± 0.1 4.9 ± 0.1 6.6 ± 0.1 39.5 44.5 48.7 0.6 x h1.2 1.3 63.5 ± 0.25 Document Number: 95245 Revision: 24-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000