VS-100MT060WDF Datasheet

VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Primary MTP IGBT Power Module
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MTP
BENEFITS
PRODUCT SUMMARY
• Lower conduction losses and switching losses
FRED Pt® AP DIODE, TJ = 150 °C
600 V
• Higher switching frequency up to 150 kHz
IF(DC) at 80 °C
11 A
• Optimized for welding, UPS, and SMPS applications
VF at 25 °C at 60 A
2.08 V
VRRM
• PCB solderable terminals
• Direct mounting to heatsink
IGBT, TJ = 150 °C
VCES
600 V
VCE(ON) at 25 °C at 60 A
1.98 V
IC at 80°C
83 A










FRED Pt® CHOPPER DIODE, TJ = 150 °C
VR
600 V
IF(DC) at 80 °C
17 A
VF at 25 °C at 60 A
2.06 V
Speed
30 kHz to 150 kHz
Package
MTP
Circuit
Dual forward
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
FRED Pt
Antiparallel
Diode
IGBT
Maximum continuous forward current
TJ = 150 °C maximum
TEST CONDITIONS
VRRM
IF(DC)
MAX.
UNITS
600
V
TC = 25 °C
17
TC = 80 °C
11
A
Maximum power dissipation
PD
TC = 25 °C
25
Collector to emitter voltage
VCES
TJ = 25 °C
600
V
Gate to emitter voltage
VGE
IGES max. ± 250 ns
± 20
V
TC = 25 °C
121
Maximum continuous collector current
at VGE = 15 V, TJ = 150 °C maximum
IC
Clamped inductive load current
ILM
Maximum power dissipation
PD
Repetitive peak reverse voltage
FRED Pt
Chopper Diode
SYMBOL
TC = 80 °C
83
W
A
300
TC = 25 °C
VRRM
462
W
600
V
TC = 25 °C
26
TC = 80 °C
17
Maximum continuous forward current
TJ = 150 °C maximum
IF
Maximum power dissipation
PD
Maximum operating junction temperature
TJ
150
Storage temperature range
TStg
-40 to +150
Isolation voltage
VISOL
TC = 25 °C
VRMS t = 1 s, TJ = 25 °C
56
3500
A
W
°C
V
Revision: 10-Jun-15
Document Number: 93412
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
Blocking voltage
AP Diode
Forward voltage drop
Collector to emitter
breakdown voltage
IGBT
FRED Pt
Chopper
Diode
SYMBOL
BVRRM
VFM
BVCES
Temperature coefficient of
breakdown voltage
VBR(CES)/TJ
Collector to emitter voltage
VCE(ON)
Gate threshold voltage
VGE(th)
Collector to emitter
leakage current
ICES
Gate to emitter leakage
IGES
Forward voltage drop
VFM
Blocking voltage
Reverse leakage current
BVRM
IRM
TEST CONDITIONS
0.5 mA
MIN.
TYP.
MAX.
UNITS
V
600
-
-
IF = 60 A
-
2.08
2.43
IF = 60 A, TJ = 125 °C
-
2.05
2.3
VGE = 0 V, IC = 0.5 mA
600
-
-
V
IC = 0.5 mA (25 °C to 125 °C)
-
0.6
-
V/°C
VGE 15 V, IC = 60 A
-
1.93
2.29
VGE = 15 V, lC = 60 A, TJ = 125 °C
-
2.36
2.80
VCE = VGE, IC = 500 μA
2.9
-
6.0
V
V
V
VGE = 0 V, VCE = 600 V
-
-
100
μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
-
2.0
mA
VGE = ± 20 V
-
-
± 100
nA
IF = 60 A
-
2.06
2.53
IF = 60 A, TJ = 125 °C
-
1.83
2.26
0.5 mA
V
600
-
-
VRRM = 600 V
-
-
75
μA
VRRM = 600 V, TJ = 125 °C
-
-
0.5
mA
RECOVERY PARAMETER
AP Diode
FRED Pt
Chopper
Diode
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
IF = 60 A
dI/dt = 200 A/μs
VR = 200 V
IF = 60 A
dI/dt = 200 A/μs
VR = 200 V
IF = 60 A
dI/dt = 200 A/μs
VR = 200 V, TJ = 125 °C
-
67
11
A
-
120
160
ns
-
620
850
nC
-
4.5
6.0
A
-
67
85
ns
-
130
250
nC
-
9.5
12.0
A
-
128
165
ns
-
601
900
nC
Revision: 10-Jun-15
Document Number: 93412
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100MT060WDF
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
MIN.
TYP.
MAX.
-
460
-
-
160
-
-
70
-
Eon
-
0.2
-
Turn-off switching loss
Eoff
-
0.96
-
Total switching loss
Etot
-
1.16
-
Turn-on delay time
td(on)
-
240
-
Qg
Gate to source charge
Qgs
Gate to drain (Miller) charge
Qgd
Turn-on switching loss
Rise time
Turn-off delay time
PFC IGBT
SYMBOL
Total gate charge
Fall time
TEST CONDITIONS
IC = 60 A
VCC = 480 V
VGE = 15 V
IC = 100 A, VCC = 360 V, VGE = 15 V
Rg = 5 , L = 500 μH, TJ = 25 °C
tr
-
47
-
td(off)
-
240
-
tf
-
66
-
Turn-on switching loss
Eon
-
0.33
-
Turn-off switching loss
Eoff
-
1.45
-
Total switching loss
Etot
-
1.78
-
Turn-on delay time
td(on)
Rise time
Turn-off delay time
IC = 100 A, VCC = 360 V, VGE = 15 V
Rg = 5 , L = 500 μH, TJ = 125 °C
-
246
-
tr
-
50
-
td(off)
-
246
-
UNITS
nC
mJ
ns
mJ
ns
tf
-
71
-
Input capacitance
Cies
-
9500
-
Output capacitance
Coes
-
780
-
Reverse transfer capacitance
Cres
-
120
-
MIN.
TYP.
MAX.
UNITS
Fall time
VGE = 0 V
VCC = 30 V
f = 1 MHz
pF
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Resistance
R
TJ = 25 °C
-
30 000
-

B value
B
TJ = 25 °C/TJ = 85 °C
-
4000
-
K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
AP FRED Pt Diode
Junction to case diode thermal resistance
IGBT
Junction to case IGBT thermal resistance
FRED Pt
Chopper Diode
Junction to case diode thermal resistance
Case to sink, flat, greased surface per module
Mounting torque ± 10 % to heatsink
Approximate weight
(1)
RthJC
RthCS
MIN.
TYP.
MAX.
-
-
4.9
UNITS
-
-
0.27
-
-
2.25
-
0.06
-
°C/W
-
-
4
Nm
-
65
-
g
°C/W
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
Revision: 10-Jun-15
Document Number: 93412
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100MT060WDF
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160
250
200
120
VGE = 18 V
100
IC (A)
Maximum Allowable
Case Temperature (°C)
140
80
150
VGE = 15 V
VGE = 9 V
100
60
VGE = 12 V
40
50
20
0
0
20
40
60
80
100
120
IC - Continuous Collector Current (A)
93412_01
0
140
0
2
3
4
5
VCE (V)
93412_04
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C
250
100
200
10
150
IC (A)
1000
IC (A)
1
1
100
0.1
50
0.01
TC = 125 °C
TC = 25 °C
0
1
10
100
1000
VCE (V)
93412_02
5
6
8
9
10
VGE (V)
93412_05
Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V
7
Fig. 5 - Typical IGBT Transfer Characteristics, TJ = 125 °C
250
10
VGE = 18 V
1
200
150 °C
VGE = 9 V
VGE = 12 V
150
ICES (mA)
IC (A)
VGE = 15 V
100
0.1
0.01
25 °C
50
0.001
0
0
93412_03
1
2
3
4
5
VCE (V)
Fig. 3 - Typical IGBT Output Characteristics, TJ = 25 °C
0.0001
100
93412_06
200
300
400
500
600
VCES (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 10-Jun-15
Document Number: 93412
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VS-100MT060WDF
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TJ = 25 °C
4.5
Vgeth (V)
IF - Instantaneous Forward Drop (A)
5.0
4.0
3.5
TJ = 125 °C
3.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
90
70
60
40
20
10
0
0.25
80
70
60
50
TJ = 150 °C
TJ = 125 °C
20
TJ = 25 °C
1.25
2.25
2.75
3.25
3.75
VF - Forward Voltage Drop (V)
140
120
100
80
60
40
20
0
0.5
1.0
1.5
2.0
2.5
0
3.0
VF - Anode to Cathode
Forward Voltage Drop (V)
5
10
15
20
25
30
35
40
IF - Continuous Forward Current (A)
93412_11
Fig. 8 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode, tp = 500 μs
Fig. 11 - Maximum Continuous Forward Current vs.
Case Temperature PFC Diode
0.1
160
140
TJ = 150 °C
0.01
120
IR (mA)
100
80
0.001
60
0.0001
40
TJ = 25 °C
20
0
0
93412_09
1.75
160
0
93412_08
Allowable Case Temperature (°C)
0.75
Fig. 10 - Typical PFC Diode Forward Voltage
Allowable Case Temperature (°C)
IF - Instantaneous Forward Current (A)
90
10
TJ = 25 °C
30
93412_10
100
30
TJ = 125 °C
50
Fig. 7 - Typical IGBT Gate Thresold Voltage
40
TJ = 150 °C
80
1.0
IC (mA)
93412_07
100
5
10
15
20
IF - Continuous Forward Current (A)
Fig. 9 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
0.00001
100
93412_12
200
300
400
500
600
VR (V)
Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs.
Reverse Voltage
Revision: 10-Jun-15
Document Number: 93412
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1000
2.0
td(off)
Switching Time (ns)
Energy (mJ)
1.6
1.2
Eoff
0.8
td(on)
100
tf
tr
Eon
0.4
0
10
0
20
40
60
80
100
120
IC (A)
93412_13
0
10
20
30
40
50
Rg (Ω)
93412_16
Fig. 16 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C
IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH
Fig. 13 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 
5
250
4
Energy (mJ)
200
trr (ns)
3
Eoff
2
TJ = 125 °C
150
Eon
TJ = 25 °C
1
0
0
10
20
30
40
Rg (Ω)
93412_14
100
100
50
400
500
Fig. 17 - Typical trr Antiparallel Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A
25
1000
20
td(off)
TJ = 125 °C
Irr (A)
td(on)
tf
100
15
TJ = 25 °C
10
tr
5
10
0
93412_15
300
dIF/dt (A/μs)
93412_17
Fig. 14 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C
IC = 100 A, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 
Switching Time (ns)
200
20
40
60
80
100
0
100
120
IC (A)
Fig. 15 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VDD = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 
93412_18
200
300
400
500
dIF/dt (A/μs)
Fig. 18 - Typical Irr Antiparallel Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A
Revision: 10-Jun-15
Document Number: 93412
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20
1500
TJ = 125 °C
15
TJ = 125 °C
Irr (A)
Qrr (nC)
1200
900
10
TJ = 25 °C
5
600
300
100
200
300
400
0
100
500
dIF/dt (A/μs)
93412_19
TJ = 25 °C
200
300
400
500
dIF/dt (A/μs)
93412_21
Fig. 21 - Typical Irr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A
Fig. 19 - Typical Qrr Antiparallel Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A
1100
180
1000
900
800
TJ = 125 °C
trr (ns)
Qrr (nC)
130
TJ = 125 °C
700
600
500
400
80
300
TJ = 25 °C
200
TJ = 25 °C
100
30
100
200
300
400
0
100
500
dIF/dt (A/μs)
93412_20
200
300
500
dIF/dt (A/μs)
93412_22
Fig. 20 - Typical trr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A
400
Fig. 22 - Typical Qrr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 40 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
93412_23
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
Revision: 10-Jun-15
Document Number: 93412
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93412_24
Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics (PFC Diode)
Driver
L
+ VCC
-
D.U.T.
0
D +
C -
1K
900 V
D.U.T.
Fig. 25 - Gate Charge Circuit (Turn-Off)
Fig. 27 - S.C. SOA Circuit
L
Diode clamp/
D.U.T.
+
-
80 V
L
+
-
-5V
D.U.T.
D.U.T./
Driver
1000 V
Rg
+
VCC
Rg
Fig. 26 - RBSOA Circuit
Fig. 28 - Switching Loss Circuit
R=
VCC
ICM
D.U.T.
+
VCC
Rg
Fig. 29 - Resistive Load Circuit
Revision: 10-Jun-15
Document Number: 93412
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CIRCUIT CONFIGURATION
E1
F1
Q1
D1
D3
A7
E6
M2
M3
A1
B1
E7
Th
Q4
G6
D2
D4
G7
M7
I1
L1
ORDERING INFORMATION TABLE
Device code
VS-
100
MT
060
W
DF
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (100 = 100 A)
3
-
Essential part number (MT = MTP package)
4
-
Voltage code x 10 = Voltage rating (example: 060 = 600 V)
5
-
Die IGBT technology (W = Warp Speed IGBT)
6
-
Circuit configuration (DF = Dual forward)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95383
Revision: 10-Jun-15
Document Number: 93412
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Outline Dimensions
Vishay Semiconductors
MTP - Full Pin
DIMENSIONS in millimeters
3.0
2.1
1.5
z detail
12 ± 0.3
39.5 ± 0.3
6
12 ± 0.3
Ø 1.1 ± 0.025
3
Use self taping screw
or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8
according to PCB thickness used
17 ± 0.3
2.5 ± 0.1
45 ± 0.1
63.5 ± 0.15
0.8 Ra
1.3
21.1
7.4
48.7 ± 0.3
Ø 1 ± 0.025
+ 0.5
- 0.2
4.1
A B C D E F G H I L M
1
45°
19.8 ± 0.1
2
27.5 ± 0.3
31.8 ± 0.15
3
7.6
4
15.2
5
22.8
Ø 5 (x 4)
33.2 ± 0.3
6
7
5.2
Ø 2.1 (x 4)
R2.6 (x 2)
6
12
Pins position
with tolerance
Ø 0.5
22.8 ± 0.5
Ground pin
18
24
7
30
20
Document Number: 95383
Revision: 19-Nov-10
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000