VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt® hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MTP BENEFITS PRODUCT SUMMARY • Lower conduction losses and switching losses FRED Pt® AP DIODE, TJ = 150 °C 600 V • Higher switching frequency up to 150 kHz IF(DC) at 80 °C 11 A • Optimized for welding, UPS, and SMPS applications VF at 25 °C at 60 A 2.08 V VRRM • PCB solderable terminals • Direct mounting to heatsink IGBT, TJ = 150 °C VCES 600 V VCE(ON) at 25 °C at 60 A 1.98 V IC at 80°C 83 A FRED Pt® CHOPPER DIODE, TJ = 150 °C VR 600 V IF(DC) at 80 °C 17 A VF at 25 °C at 60 A 2.06 V Speed 30 kHz to 150 kHz Package MTP Circuit Dual forward ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage FRED Pt Antiparallel Diode IGBT Maximum continuous forward current TJ = 150 °C maximum TEST CONDITIONS VRRM IF(DC) MAX. UNITS 600 V TC = 25 °C 17 TC = 80 °C 11 A Maximum power dissipation PD TC = 25 °C 25 Collector to emitter voltage VCES TJ = 25 °C 600 V Gate to emitter voltage VGE IGES max. ± 250 ns ± 20 V TC = 25 °C 121 Maximum continuous collector current at VGE = 15 V, TJ = 150 °C maximum IC Clamped inductive load current ILM Maximum power dissipation PD Repetitive peak reverse voltage FRED Pt Chopper Diode SYMBOL TC = 80 °C 83 W A 300 TC = 25 °C VRRM 462 W 600 V TC = 25 °C 26 TC = 80 °C 17 Maximum continuous forward current TJ = 150 °C maximum IF Maximum power dissipation PD Maximum operating junction temperature TJ 150 Storage temperature range TStg -40 to +150 Isolation voltage VISOL TC = 25 °C VRMS t = 1 s, TJ = 25 °C 56 3500 A W °C V Revision: 10-Jun-15 Document Number: 93412 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Blocking voltage AP Diode Forward voltage drop Collector to emitter breakdown voltage IGBT FRED Pt Chopper Diode SYMBOL BVRRM VFM BVCES Temperature coefficient of breakdown voltage VBR(CES)/TJ Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Collector to emitter leakage current ICES Gate to emitter leakage IGES Forward voltage drop VFM Blocking voltage Reverse leakage current BVRM IRM TEST CONDITIONS 0.5 mA MIN. TYP. MAX. UNITS V 600 - - IF = 60 A - 2.08 2.43 IF = 60 A, TJ = 125 °C - 2.05 2.3 VGE = 0 V, IC = 0.5 mA 600 - - V IC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C VGE 15 V, IC = 60 A - 1.93 2.29 VGE = 15 V, lC = 60 A, TJ = 125 °C - 2.36 2.80 VCE = VGE, IC = 500 μA 2.9 - 6.0 V V V VGE = 0 V, VCE = 600 V - - 100 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 2.0 mA VGE = ± 20 V - - ± 100 nA IF = 60 A - 2.06 2.53 IF = 60 A, TJ = 125 °C - 1.83 2.26 0.5 mA V 600 - - VRRM = 600 V - - 75 μA VRRM = 600 V, TJ = 125 °C - - 0.5 mA RECOVERY PARAMETER AP Diode FRED Pt Chopper Diode Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr IF = 60 A dI/dt = 200 A/μs VR = 200 V IF = 60 A dI/dt = 200 A/μs VR = 200 V IF = 60 A dI/dt = 200 A/μs VR = 200 V, TJ = 125 °C - 67 11 A - 120 160 ns - 620 850 nC - 4.5 6.0 A - 67 85 ns - 130 250 nC - 9.5 12.0 A - 128 165 ns - 601 900 nC Revision: 10-Jun-15 Document Number: 93412 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER MIN. TYP. MAX. - 460 - - 160 - - 70 - Eon - 0.2 - Turn-off switching loss Eoff - 0.96 - Total switching loss Etot - 1.16 - Turn-on delay time td(on) - 240 - Qg Gate to source charge Qgs Gate to drain (Miller) charge Qgd Turn-on switching loss Rise time Turn-off delay time PFC IGBT SYMBOL Total gate charge Fall time TEST CONDITIONS IC = 60 A VCC = 480 V VGE = 15 V IC = 100 A, VCC = 360 V, VGE = 15 V Rg = 5 , L = 500 μH, TJ = 25 °C tr - 47 - td(off) - 240 - tf - 66 - Turn-on switching loss Eon - 0.33 - Turn-off switching loss Eoff - 1.45 - Total switching loss Etot - 1.78 - Turn-on delay time td(on) Rise time Turn-off delay time IC = 100 A, VCC = 360 V, VGE = 15 V Rg = 5 , L = 500 μH, TJ = 125 °C - 246 - tr - 50 - td(off) - 246 - UNITS nC mJ ns mJ ns tf - 71 - Input capacitance Cies - 9500 - Output capacitance Coes - 780 - Reverse transfer capacitance Cres - 120 - MIN. TYP. MAX. UNITS Fall time VGE = 0 V VCC = 30 V f = 1 MHz pF THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Resistance R TJ = 25 °C - 30 000 - B value B TJ = 25 °C/TJ = 85 °C - 4000 - K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL AP FRED Pt Diode Junction to case diode thermal resistance IGBT Junction to case IGBT thermal resistance FRED Pt Chopper Diode Junction to case diode thermal resistance Case to sink, flat, greased surface per module Mounting torque ± 10 % to heatsink Approximate weight (1) RthJC RthCS MIN. TYP. MAX. - - 4.9 UNITS - - 0.27 - - 2.25 - 0.06 - °C/W - - 4 Nm - 65 - g °C/W Note (1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Revision: 10-Jun-15 Document Number: 93412 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors 160 250 200 120 VGE = 18 V 100 IC (A) Maximum Allowable Case Temperature (°C) 140 80 150 VGE = 15 V VGE = 9 V 100 60 VGE = 12 V 40 50 20 0 0 20 40 60 80 100 120 IC - Continuous Collector Current (A) 93412_01 0 140 0 2 3 4 5 VCE (V) 93412_04 Fig. 1 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C 250 100 200 10 150 IC (A) 1000 IC (A) 1 1 100 0.1 50 0.01 TC = 125 °C TC = 25 °C 0 1 10 100 1000 VCE (V) 93412_02 5 6 8 9 10 VGE (V) 93412_05 Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V 7 Fig. 5 - Typical IGBT Transfer Characteristics, TJ = 125 °C 250 10 VGE = 18 V 1 200 150 °C VGE = 9 V VGE = 12 V 150 ICES (mA) IC (A) VGE = 15 V 100 0.1 0.01 25 °C 50 0.001 0 0 93412_03 1 2 3 4 5 VCE (V) Fig. 3 - Typical IGBT Output Characteristics, TJ = 25 °C 0.0001 100 93412_06 200 300 400 500 600 VCES (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Revision: 10-Jun-15 Document Number: 93412 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors TJ = 25 °C 4.5 Vgeth (V) IF - Instantaneous Forward Drop (A) 5.0 4.0 3.5 TJ = 125 °C 3.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 90 70 60 40 20 10 0 0.25 80 70 60 50 TJ = 150 °C TJ = 125 °C 20 TJ = 25 °C 1.25 2.25 2.75 3.25 3.75 VF - Forward Voltage Drop (V) 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 0 3.0 VF - Anode to Cathode Forward Voltage Drop (V) 5 10 15 20 25 30 35 40 IF - Continuous Forward Current (A) 93412_11 Fig. 8 - Typical Diode Forward Voltage Characteristics of Antiparallel Diode, tp = 500 μs Fig. 11 - Maximum Continuous Forward Current vs. Case Temperature PFC Diode 0.1 160 140 TJ = 150 °C 0.01 120 IR (mA) 100 80 0.001 60 0.0001 40 TJ = 25 °C 20 0 0 93412_09 1.75 160 0 93412_08 Allowable Case Temperature (°C) 0.75 Fig. 10 - Typical PFC Diode Forward Voltage Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) 90 10 TJ = 25 °C 30 93412_10 100 30 TJ = 125 °C 50 Fig. 7 - Typical IGBT Gate Thresold Voltage 40 TJ = 150 °C 80 1.0 IC (mA) 93412_07 100 5 10 15 20 IF - Continuous Forward Current (A) Fig. 9 - Maximum Continuous Forward Current vs. Case Temperature Antiparallel Diode 0.00001 100 93412_12 200 300 400 500 600 VR (V) Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs. Reverse Voltage Revision: 10-Jun-15 Document Number: 93412 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors 1000 2.0 td(off) Switching Time (ns) Energy (mJ) 1.6 1.2 Eoff 0.8 td(on) 100 tf tr Eon 0.4 0 10 0 20 40 60 80 100 120 IC (A) 93412_13 0 10 20 30 40 50 Rg (Ω) 93412_16 Fig. 16 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH Fig. 13 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 5 250 4 Energy (mJ) 200 trr (ns) 3 Eoff 2 TJ = 125 °C 150 Eon TJ = 25 °C 1 0 0 10 20 30 40 Rg (Ω) 93412_14 100 100 50 400 500 Fig. 17 - Typical trr Antiparallel Diode vs. dIF/dt Vrr = 200 V, IF = 60 A 25 1000 20 td(off) TJ = 125 °C Irr (A) td(on) tf 100 15 TJ = 25 °C 10 tr 5 10 0 93412_15 300 dIF/dt (A/μs) 93412_17 Fig. 14 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C IC = 100 A, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 Switching Time (ns) 200 20 40 60 80 100 0 100 120 IC (A) Fig. 15 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VDD = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 93412_18 200 300 400 500 dIF/dt (A/μs) Fig. 18 - Typical Irr Antiparallel Diode vs. dIF/dt Vrr = 200 V, IF = 60 A Revision: 10-Jun-15 Document Number: 93412 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors 20 1500 TJ = 125 °C 15 TJ = 125 °C Irr (A) Qrr (nC) 1200 900 10 TJ = 25 °C 5 600 300 100 200 300 400 0 100 500 dIF/dt (A/μs) 93412_19 TJ = 25 °C 200 300 400 500 dIF/dt (A/μs) 93412_21 Fig. 21 - Typical Irr Chopper Diode vs. dIF/dt Vrr = 200 V, IF = 60 A Fig. 19 - Typical Qrr Antiparallel Diode vs. dIF/dt Vrr = 200 V, IF = 60 A 1100 180 1000 900 800 TJ = 125 °C trr (ns) Qrr (nC) 130 TJ = 125 °C 700 600 500 400 80 300 TJ = 25 °C 200 TJ = 25 °C 100 30 100 200 300 400 0 100 500 dIF/dt (A/μs) 93412_20 200 300 500 dIF/dt (A/μs) 93412_22 Fig. 20 - Typical trr Chopper Diode vs. dIF/dt Vrr = 200 V, IF = 60 A 400 Fig. 22 - Typical Qrr Chopper Diode vs. dIF/dt Vrr = 200 V, IF = 40 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93412_23 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Revision: 10-Jun-15 Document Number: 93412 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93412_24 Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics (PFC Diode) Driver L + VCC - D.U.T. 0 D + C - 1K 900 V D.U.T. Fig. 25 - Gate Charge Circuit (Turn-Off) Fig. 27 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. 26 - RBSOA Circuit Fig. 28 - Switching Loss Circuit R= VCC ICM D.U.T. + VCC Rg Fig. 29 - Resistive Load Circuit Revision: 10-Jun-15 Document Number: 93412 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION E1 F1 Q1 D1 D3 A7 E6 M2 M3 A1 B1 E7 Th Q4 G6 D2 D4 G7 M7 I1 L1 ORDERING INFORMATION TABLE Device code VS- 100 MT 060 W DF 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (100 = 100 A) 3 - Essential part number (MT = MTP package) 4 - Voltage code x 10 = Voltage rating (example: 060 = 600 V) 5 - Die IGBT technology (W = Warp Speed IGBT) 6 - Circuit configuration (DF = Dual forward) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95383 Revision: 10-Jun-15 Document Number: 93412 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP - Full Pin DIMENSIONS in millimeters 3.0 2.1 1.5 z detail 12 ± 0.3 39.5 ± 0.3 6 12 ± 0.3 Ø 1.1 ± 0.025 3 Use self taping screw or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8 according to PCB thickness used 17 ± 0.3 2.5 ± 0.1 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 21.1 7.4 48.7 ± 0.3 Ø 1 ± 0.025 + 0.5 - 0.2 4.1 A B C D E F G H I L M 1 45° 19.8 ± 0.1 2 27.5 ± 0.3 31.8 ± 0.15 3 7.6 4 15.2 5 22.8 Ø 5 (x 4) 33.2 ± 0.3 6 7 5.2 Ø 2.1 (x 4) R2.6 (x 2) 6 12 Pins position with tolerance Ø 0.5 22.8 ± 0.5 Ground pin 18 24 7 30 20 Document Number: 95383 Revision: 19-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000