VS-150MT060WDF Datasheet

VS-150MT060WDF
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Vishay Semiconductors
MTP IGBT Power Module
Primary Dual Forward
FEATURES
• Buck PFC stage with warp 3 IGBT and FRED Pt®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Ultrafast switching IGBT
• Designed and qualified for industrial level
MTP
(Package example)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
PRODUCT SUMMARY
• Lower conduction losses and switching losses
IGBT, TJ = 150 °C
VCES
600 V
• Optimized for welding, UPS, and SMPS applications
VCE(ON) at 25 °C at 80 A
2.11 V
• PCB solderable terminals
IC at 80°C
96 A
• Direct mounting to heatsink
FRED Pt® AP DIODE, TJ = 150 °C
VRRM












600 V
IF(DC) at 80 °C
11 A
VF at 25 °C at 5 A
1.1 V
FRED Pt® CHOPPER DIODE, TJ = 150 °C
VR
600 V
IF(DC) at 80 °C
22 A
VF at 25 °C at 60 A
2.07 V
Speed
30 kHz to 150 kHz
Package
MTP
Circuit
Dual forward
ABSOLUTE MAXIMUM RATINGS
PARAMETER
IGBT
VCES
Gate to emitter voltage
VGE
Maximum continuous collector current
at VGE = 15 V, TJ = 150 °C maximum
Pulse collector current
Clamped inductive load current
Maximum power dissipation
Antiparallel
Diode
SYMBOL
Collector to emitter voltage
IC
ICM
PD
Maximum continuous forward current
TJ = 150 °C maximum
IF(DC)
Maximum power dissipation
IFSM
PD
UNITS
600
V
± 20
V
138
TC = 80 °C
96
330
ILM
VRRM
MAX.
TC = 25 °C
(1)
Repetitive peak reverse voltage
Maximum non-repetitive peak current
TEST CONDITIONS
A
330
TC = 25 °C
543
W
600
V
TC = 25 °C
17
TC = 80 °C
11
10 ms sine or 6 ms rectangular
pulse, TJ = 25 °C
60
TC = 25 °C
24
A
W
Revision: 10-Jun-15
Document Number: 95716
1
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Chopper
Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum non-repetitive peak current
SYMBOL
TEST CONDITIONS
VRRM
IF
IFSM
MAX.
UNITS
600
V
TC = 25 °C
33
TC = 80 °C
22
10 ms sine or 6 ms rectangular
pulse, TJ = 25 °C
135
TC = 25 °C
57
A
W
Maximum power dissipation
PD
Maximum operating junction
temperature
TJ
150
Storage temperature range
TStg
-40 to +150
Isolation voltage
VISOL
TJ = 25 °C, all terminals shorted,
f = 50 Hz, t =1 s
°C
3500
V
Notes
• Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(1) V
CC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
IGBT
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
BVCES
Temperature coefficient of
breakdown voltage
VBR(CES)/TJ
Collector to emitter voltage
VCE(ON)
Gate threshold voltage
VGE(th)
Chopper
Diode
MIN.
TYP.
600
-
-
V
IC = 1.0 mA (25 °C to 125 °C)
-
0.6
-
V/°C
VGE 15 V, IC = 80 A
-
2.11
2.48
VGE = 15 V, lC = 80 A, TJ = 125 °C
-
2.43
-
VGE = 0 V, IC = 1.5 mA
V
3.2
4.4
6.2
V
-
-12
-
mV/°C
gfe
VCE = 20 V, IC = 80 A
-
97
-
S
Transfer characteristics
VGE
VCE = 20 V, IC = 80 A
-
6.6
-
V
VGE = 0 V, VCE = 600 V
-
8
100
μA
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 600 V,
TJ = 125 °C
-
0.1
-
mA
Gate to emitter leakage
IGES
VGE = ± 20 V
-
-
± 250
nA
BVRRM
IR = 100 μA
600
-
-
V
VGE(th)/TJ
Forward transconductance
Forward voltage drop
VFM
Forward voltage drop
VFM
Blocking voltage
Reverse leakage current
BVRM
IRM
VCE = VGE, IC = 750 μA
MAX. UNITS
VCE = VGE,
IC = 1.0 mA (25 °C to 125 °C)
Temperature coefficient of
threshold voltage
Blocking voltage
AP Diode
TEST CONDITIONS
IF = 5 A
-
1.1
1.27
IF = 5 A, TJ = 125 °C
-
0.96
-
IF = 60 A
-
2.07
2.53
IF = 60 A, TJ = 125 °C
-
1.87
-
IR = 100 μA
600
-
-
VRRM = 600 V
-
2
70
VRRM = 600 V, TJ = 125 °C
-
12
-
V
V
μA
Revision: 10-Jun-15
Document Number: 95716
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
IC = 60 A
VCC = 400 V
VGE = 15 V
MIN.
TYP.
MAX.
-
540
-
-
84
-
-
192
-
Turn-on switching loss
Eon
-
0.51
-
Turn-off switching loss
Eoff
-
2.66
-
-
3.17
-
-
173
-
Total switching loss
Etot
Turn-on delay time
td(on)
IC = 150 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ,
L = 500 μH, TJ = 25 °C (1)
-
79
-
td(off)
-
374
-
tf
-
66
-
Turn-on switching loss
Eon
-
0.66
-
Turn-off switching loss
Eoff
-
2.75
-
-
3.41
-
-
167
-
Rise time
tr
Turn-off delay time
Fall time
PFC IGBT
TEST CONDITIONS
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
-
80
-
td(off)
-
389
-
tr
Turn-off delay time
Fall time
IC = 150 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ,
L = 500 μH, TJ = 125 °C (1)
tf
-
69
-
Input capacitance
Cies
-
14 020
-
Output capacitance
Coes
-
1010
-
Reverse transfer capacitance
Cres
-
174
-
Reverse bias safe operating area
RBSOA
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 330 A, VCC = 300 V,
VP = 600 V, Rg = 4.7 ,
VGE = 15 V, L = 500 μH,
TJ = 150 °C
UNITS
nC
mJ
ns
mJ
ns
pF
Full square
Note
(1) Energy losses include “tail” and diode reverse recovery.
RECOVERY PARAMETER (TJ = 25 °C unless otherwise noted)
PARAMETER
AP Diode
Chopper
Diode
SYMBOL
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
TEST CONDITIONS
MIN.
IF = 10 A
dI/dt = 200 A/μs
Vrr = 200 V
IF = 50 A
dI/dt = 200 A/μs
Vrr = 200 V
IF = 50 A
dI/dt = 200 A/μs
Vrr = 200 V, TJ = 125 °C
TYP.
MAX.
UNITS
-
10
-
A
-
104
-
ns
-
537
-
nC
-
4.7
-
A
-
73
-
ns
-
171
-
nC
-
10.3
-
A
-
140
-
ns
-
716
-
nC
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
MIN.
TYP.
MAX.
UNITS
Resistance
SYMBOL
R
TJ = 25 °C
TEST CONDITIONS
-
30 000
-

B value
B
TJ = 25 °C/TJ = 85 °C
-
4000
-
K
Revision: 10-Jun-15
Document Number: 95716
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VS-150MT060WDF
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
IGBT
Junction to case IGBT thermal resistance
AP FRED Pt
Junction to case diode thermal resistance
FRED Pt
Junction to case diode thermal resistance
SYMBOL
RthJC
Case to sink, flat, greased surface per module
RthCS
MIN.
TYP.
MAX.
-
-
0.23
-
-
5.1
-
-
2.2
UNITS
°C/W
-
0.06
-
°C/W
Mounting torque ± 10 % to heatsink (1)
-
-
4
Nm
Approximate weight
-
65
-
g
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
300
140
250
120
TJ = 25 °C
200
DC
100
IC (A)
Allowable Case Temperature (°C)
160
80
60
TJ = 125 °C
150
TJ = 150 °C
100
40
50
20
0
0
0
20
40
60
80
100
120
140
160
0
1.0
2.0
IC - Continuous Collector Current (A)
3.0
4.0
6.0
Fig. 3 - IC vs. VCE
(Typical IGBT Output Characteristics, VGE = 15 V)
Fig. 1 - Allowable Case Temperature vs. Continuous Collector
Current (Maximum IGBT Continuous Collector Current vs. Case
Temperature)
300
1000
VGE = 12 V
VGE = 15 V
VGE = 18 V
250
100
VGE = 9 V
IC (A)
200
IC (A)
5.0
VCE (V)
10
150
100
1
50
0
0.1
1
10
100
1000
VCE (V)
Fig. 2 - IC vs. VCE
(IGBT Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V)
0
1.0
2.0
3.0
4.0
5.0
6.0
VCE (V)
Fig. 4 - IC vs. VCE
(Typical IGBT Output Characteristics, TJ = 125 °C)
Revision: 10-Jun-15
Document Number: 95716
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100
160
VCE = 20 V
140
TJ = 125 °C
90
80
120
70
60
TJ = 125 °C
80
IF (A)
IC (A)
100
50
40
60
30
TJ = 25 °C
40
TJ = 150 °C
20
20
10
0
0
3
4
5
6
7
TJ = 25 °C
0
8
0.5
1.0
1.5
VGE (V)
Fig. 5 - IC vs. VGE
(Typical IGBT Transfer Characteristics)
3.0
Allowable Case Temperature (°C)
160
5.0
TJ = 25 °C
4.5
VGEth (V)
2.5
Fig. 8 - IF vs. VFM
(Typical Antiparallel Diode Forward Characteristics)
5.5
4.0
3.5
TJ = 125 °C
3.0
2.5
2.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
140
120
DC
100
80
60
40
20
0
1.0
0
2
4
6
8
10
12
14
16
18
20
IF - Continuous Forward Current (A)
IC (mA)
Fig. 6 - VGEth vs. IC
(Typical IGBT Gate Threshold Voltage)
Fig. 9 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum Antiparallel Diode Continuous
Forward Current vs. Case Temperature)
1
160
TJ = 150 °C
140
TJ = 125 °C
0.1
120
100
0.01
IF (A)
ICES (mA)
2.0
VFM (V)
TJ = 25 °C
80
60
TJ = 150 °C
0.001
40
TJ = 125 °C
20
0.0001
TJ = 25 °C
0
100
200
300
400
500
600
VCES (V)
Fig. 7 - ICES vs. VCES
(Typical IGBT Zero Gate Voltage Collector Current)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VFM (V)
Fig. 10 - IF vs. VFM
(Typical Chopper Diode Forward Characteristics)
Revision: 10-Jun-15
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1000
td(off)
140
120
Switching Time (ns)
Allowable Case Temperature (°C)
160
DC
100
80
60
40
td(on)
100
tf
tr
20
0
10
0
5
10
15
20
25
30
35
0
40
20
40
60
IF - Continuous Forward Current (A)
80
100
120
140
160
IC (A)
Fig. 11 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum Chopper Diode Continuous Forward Current
vs. Case Temperature)
Fig. 14 - Switching Time vs. IC
(Typical IGBT Switching Time vs. IC)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
10
0.1
TJ = 150 °C
9
8
TJ = 125 °C
7
Energy (mJ)
IRM (mA)
0.01
TJ = 25 °C
0.001
6
Eoff
5
4
Eon
3
2
1
0
0.0001
100
200
300
400
500
0
600
5
10
15
20
VR (V)
25
30
35
40
45
50
Rg (Ω)
Fig. 12 - IRM vs. VR
(Typical Chopper Diode Reverse Leakage Current)
Fig. 15 - Energy Loss vs. Rg
(Typical IGBT Energy Loss vs. Rg)
TJ = 125 °C, VCC = 300 V, IC = 150 A, VGE = 15 V, L = 500 μH
3
10 000
Switching Time (ns)
2.5
Energy (mJ)
2
1.5
Eoff
1
Eon
1000
td(off)
td(on)
tr
100
tf
0.5
0
10
0
20
40
60
80
100
120
140
160
IC (A)
Fig. 13 - Energy Loss vs. IC
(Typical IGBT Energy Loss vs. IC)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
0
5
10
15
20
25
30
35
40
45
50
Rg (Ω)
Fig. 16 - Switching Time vs. Rg
(Typical IGBT Switching Time vs. Rg)
TJ = 125 °C, VCC = 300 V, IC = 150 A, VGE = 15 V, L = 500 μH
Revision: 10-Jun-15
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200
200
180
180
160
160
TJ = 125 °C
140
trr (ns)
trr (ns)
TJ = 125 °C
140
120
120
100
TJ = 25 °C
100
80
80
TJ = 25 °C
60
40
60
100
200
300
400
500
100
200
400
500
Fig. 20 - trr vs. dIF/dt
(Typical Chopper Diode Reverse Recovery Time vs. dIF/dt)
Vrr = 200 V, IF = 50 A
20
30
28
26
24
22
20
18
16
14
12
10
8
6
4
18
16
TJ = 125 °C
14
TJ = 125 °C
12
Irr (A)
Irr (A)
Fig. 17 - trr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Time vs. dIF/dt)
Vrr = 200 V, IF = 10 A
TJ = 25 °C
10
TJ = 25 °C
8
6
4
2
0
100
200
300
400
100
500
200
dIF/dt (A/μs)
300
400
500
dIF/dt (A/μs)
Fig. 18 - Irr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Current vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 21 - Irr vs. dIF/dt
(Typical Chopper Diode Reverse Recovery Current vs. dIF/dt)
Vrr = 200 V, IF = 50 A
1900
1200
1100
1700
1000
TJ = 125 °C
1500
TJ = 125 °C
900
800
Qrr (nC)
1300
Qrr (nC)
300
dIF/dt (A/μs)
dIF/dt (A/μs)
1100
900
700
600
500
400
TJ = 25 °C
700
TJ = 25 °C
300
200
500
100
300
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 19 - Qrr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 10 A
100
200
300
400
500
dIF/dt (A/μs)
Fig. 22 - Qrr vs dIF/dt
(Typical Chopper Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 50 A
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 23 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Thermal Impedance ZthJC Characteristics - (IGBT))
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 24 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Thermal Impedance ZthJC Characteristics - (Chopper Diode))
CIRCUIT CONFIGURATION
E1
F1
Q1
D1
D3
A7
E6
M2
M3
A1
B1
E7
Th
Q4
G6
I1
L1
D2
D4
G7
M7
Revision: 10-Jun-15
Document Number: 95716
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ORDERING INFORMATION TABLE
Device code
VS-
150
MT
060
W
DF
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (150 = 150 A)
3
-
Essential part number (MT = MTP package)
4
-
Voltage code x 10 = Voltage rating (example: 060 = 600 V)
5
-
Die IGBT technology (W = Warp Speed IGBT)
6
-
Circuit configuration (DF = Dual forward)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95383
Revision: 10-Jun-15
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Outline Dimensions
Vishay Semiconductors
MTP - Full Pin
DIMENSIONS in millimeters
3.0
2.1
1.5
z detail
12 ± 0.3
39.5 ± 0.3
6
12 ± 0.3
Ø 1.1 ± 0.025
3
Use self taping screw
or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8
according to PCB thickness used
17 ± 0.3
2.5 ± 0.1
45 ± 0.1
63.5 ± 0.15
0.8 Ra
1.3
21.1
7.4
48.7 ± 0.3
Ø 1 ± 0.025
+ 0.5
- 0.2
4.1
A B C D E F G H I L M
1
45°
19.8 ± 0.1
2
27.5 ± 0.3
31.8 ± 0.15
3
7.6
4
15.2
5
22.8
Ø 5 (x 4)
33.2 ± 0.3
6
7
5.2
Ø 2.1 (x 4)
R2.6 (x 2)
6
12
Pins position
with tolerance
Ø 0.5
22.8 ± 0.5
Ground pin
18
24
7
30
20
Document Number: 95383
Revision: 19-Nov-10
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000