VS-100MT060WSP Datasheet

VS-100MT060WSP
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Vishay Semiconductors
MTP IGBT Power Module
Primary Rectifier and PFC
FEATURES
• Input rectifier bridge
• PFC stage with warp 2 IGBT and FRED Pt®
hyperfast diode
• Very low stray inductance design for high
speed operation
• Integrated thermistor
• Isolated baseplate
MTP
(Package example)
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
INPUT BRIDGE DIODE, TJ = 150 °C
VRRM
BENEFITS
1200 V
lO at 80 °C
50 A
VFM at 25 °C at 70 A
1.31 V
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
PFC IGBT, TJ = 150 °C
• Optimized for welding, UPS, and SMPS applications
VCES
600 V
VCE(on) at 25 °C at 60 A
2.14 V
IC at 80°C
73 A
• PCB solderable terminals
• Direct mounting to heatsink













FRED Pt® PFC DIODE, TJ = 150 °C
VR
600 V
IF(DC) at 80 °C
79 A
VF at 25 °C at 40 A
1.44 V
FRED Pt® AP DIODE, TJ = 150 °C
VR
600 V
IF(DC) at 80 °C
11 A
VF at 25 °C at 5 A
1.1 V
Speed
30 kHz to 150 kHz
Package
MTP
Circuit
Input rectifier bridge
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Input
Rectifier
Bridge
Maximum average output current
TJ = 150 °C maximum
Surge current (Non-repetitive)
Maximum I2t for fusing
PFC IGBT
SYMBOL
IO
IFSM
I2t
Collector to emitter voltage
VCES
Gate to emitter voltage
VGE
Maximum continuous collector current
at VGE = 15 V, TJ = 150 °C maximum
Pulsed collector current
TEST CONDITIONS
VRRM
IC
ILM
Maximum power dissipation
PD
UNITS
1200
V
TC = 80 °C
50
Rated VRRM applied
270
10 ms, sine pulse
364
TJ = 25 °C
600
± 20
TC = 25 °C
TC = 80 °C
ICM (1)
Clamped inductive load current
MAX.
A
A2s
V
107
73
300
A
300
TC = 25 °C
403
W
Revision: 10-Jun-15
Document Number: 95708
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VS-100MT060WSP
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
PFC Diode
AP Diode
TEST CONDITIONS
VRRM
Maximum continuous forward current
TJ = 150 °C maximum
IF
Maximum power dissipation
PD
Maximum non-repetitive peak current
IFSM
Repetitive peak reverse voltage
VRRM
Maximum continuous forward current
TJ = 150 °C maximum
IF
Maximum power dissipation
PD
Maximum non-repetitive peak current
IFSM
Maximum operating junction temperature
MAX.
UNITS
600
V
TC = 25 °C
121
TC = 80 °C
79
TC = 25 °C
154
W
10 ms sine or 6 ms rectangular
pulse, TJ = 25 °C
480
A
600
V
A
TC = 25 °C
17
TC = 80 °C
11
TC = 25 °C
24
W
10 ms sine or 6 ms rectangular
pulse, TJ = 25 °C
60
A
A
TJ
150
Storage temperature range
TStg
-40 to +150
RMS isolation voltage
VISOL
TJ = 25 °C, all terminals shorted,
f = 50 Hz, t = 1 s
°C
3500
W
Notes
• Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(1) V
CC = 400 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
R CONDUCTION PER JUNCTION - INPUT RECTIFIER BRIDGE
DEVICES
100MT060WSP
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.396
0.454
0.563
0.763
1.099
0.290
0.471
0.599
0.782
1.107
°C/W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
Blocking voltage
Input Rectifier
Bridge
(per diode)
BVRRM
Reverse leakage current
IRRM
Forward voltage drop
VFM
Forward slope resistance
rt
Conduction threshold voltage
VT
Collector to emitter
breakdown voltage
PFC IGBT
SYMBOL
BVCES
TEST CONDITIONS
MIN.
TYP.
1200
-
-
VRRM = 1200 V
-
0.0015
0.13
VRRM = 1200 V, TJ = 150 °C
-
1.0
-
IF = 70 A
-
1.31
1.45
IF = 70 A, TJ = 150 °C
-
1.34
-
-
-
8.92
m
-
-
0.83
V
600
-
-
V
IC = 500 μA (25 °C to 125 °C)
-
0.6
-
V/°C
VGE = 15 V, IC = 60 A
-
2.14
2.49
VGE = 15 V, lC = 60 A, TJ = 125 °C
-
2.58
-
IR = 100 μA
TJ = 150 °C
VGE = 0 V, IC = 1 mA
MAX. UNITS
V
mA
V
Temperature coefficient of
breakdown voltage
VBR(CES)/TJ
Collector to emitter voltage
VCE(ON)
Gate threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
2.9
3.8
6.0
V
VGE(th)/TJ
VCE = VGE, IC = 1 mA
(25 °C to 125 °C)
-
-10.3
-
mV/°C
Forward transconductance
gfe
VCE = 20 V, IC = 60 A
-
75
-
S
Transfer characteristics
VGE
VCE = 20 V, IC = 60 A
-
5.7
-
V
VGE = 0 V, VCE = 600 V
-
0.008
0.1
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
0.23
-
VGE = ± 20 V
-
-
± 200
Temperature coefficient of
threshold voltage
Collector to emitter
leakage current
ICES
Gate to emitter leakage
IGES
V
mA
nA
Revision: 10-Jun-15
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Forward voltage drop
PFC Diode
AP Diode
Blocking voltage
VFM
BVRM
Reverse leakage current
IRM
Forward voltage drop
VFM
MIN.
TYP.
MAX. UNITS
IF = 40 A
TEST CONDITIONS
-
1.44
2.38
IF = 40 A, TJ = 125 °C
-
1.07
-
600
-
-
IR = 200 μA
V
VRRM = 600 V
-
0.16
120
μA
VRRM = 600 V, TJ = 125 °C
-
0.04
-
mA
IF = 5 A
-
1.1
1.27
IF = 5 A, TJ = 125 °C
-
0.97
-
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
IC = 50 A
VCC = 400 V
VGE = 15 V
MIN.
TYP.
-
480
MAX. UNITS
-
-
82
-
-
168
-
Turn-on switching loss
Eon
-
0.4
-
Turn-off switching loss
Eoff
-
1.12
-
Total switching loss
Etot
-
1.52
-
Turn-on delay time
td(on)
-
137
-
-
52
-
td(off)
-
341
-
Rise time
tr
Turn-off delay time
Fall time
Turn-on switching loss
PFC IGBT
TEST CONDITIONS
IC = 100 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ,
L = 500 μH, TJ = 25 °C (1)
tf
-
52
-
Eon
-
0.66
-
Turn-off switching loss
Eoff
-
1.29
-
Total switching loss
Etot
-
1.95
-
Turn-on delay time
td(on)
-
134
-
-
53
-
-
352
-
Rise time
tr
Turn-off delay time
IC = 100 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ,
L = 500 μH, TJ = 125 °C (1)
td(off)
Fall time
tf
-
58
-
Input capacitance
Cies
-
9500
-
Output capacitance
Coes
-
780
-
Reverse transfer capacitance
Cres
-
116
-
Reverse bias safe operating area
RBSOA
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 300 A, VCC = 400 V, VP = 600 V,
Rg = 22 , VGE = 15 V, L = 500 μH,
TJ = 150 °C
nC
mJ
ns
mJ
ns
pF
Full square
RECOVERY PARAMETER
Peak reverse recovery current
PFC Diode
AP Diode
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
IF = 50 A
dI/dt = 200 A/μs
Vrr = 200 V
-
5.4
-
IF = 50 A, TJ = 125 °C
dI/dt = 200 A/μs
Vrr = 200 V
IF = 10 A
dI/dt = 200 A/μs
Vrr = 200 V
A
-
72
-
ns
-
194
-
nC
-
16
-
A
-
159
-
ns
-
1280
-
nC
-
10
-
A
-
101
-
ns
-
500
-
nC
Note
(1) Energy losses include “tail” and diode reverse recovery.
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
TJ = 25 °C
-
30 000
-

B value
B
TJ = 25 °C/TJ = 85 °C
-
4000
-
K
Revision: 10-Jun-15
Document Number: 95708
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VS-100MT060WSP
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Input Rectifier Bridge
Junction to case thermal resistance per diode
PFC IGBT
Junction to case IGBT thermal resistance
PFC Diode
Junction to case PFC diode thermal resistance
AP Diode
Junction to case AP diode thermal resistance
RthJC
Case to sink, flat, greased surface per module
Mounting torque ± 10 % to heatsink
RthCS
(1)
Approximate weight
MIN.
TYP.
MAX.
-
-
0.81
UNITS
-
-
0.31
-
-
0.58
-
-
5.1
-
0.06
-
°C/W
-
-
4
Nm
-
65
-
g
°C/W
160
Instantaneous On-State Current (A)
Maximum Allowable Case Temperature
(°C)
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound. Lubricated threads.
140
120
100
180°
(Rect.)
80
180°
(Sine)
60
40
20
0
0
10
20
30
40
50
60
70
80
1000
100
TJ = 150 °C
10
TJ = 25 °C
1
0
90 100
1.0
1.5
2.0
2.5
3.0
Fig. 3 - Instantaneous On-State Current vs.
Instantaneous Voltage Drop (Single Phase Input Bridge
On-State Voltage Drop Characteristics)
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Output Current (Single Phase Input Bridge
Output Current Ratings Characteristics)
325
400
350
300
180°
(Sine)
250
180°
(Rect.)
200
150
100
50
0
0
10
20
30
40
50
60
70
80
90 100
IO - Total Output Current (A)
Fig. 2 - Maximum Average On-State Power Loss vs.
Total Output Current (Single Phase Input Bridge
On-State Power Loss Characteristics)
Peak Half Sine Wave On-State
Current (A)
Maximum Average On-State Power Loss
(W)
0.5
Instantaneous Voltage Drop (V)
IO - Average Output Current (A)
300
275
At any rated load condition and with
rated VRRM applied following surgel
Initial TJ = TJ max.
250
225
200
175
No voltage reapplied
Rated VRRM reapplied
150
125
100
75
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 4 - Peak Wave On-State Current vs. Pulse Train Duration
(Single Phase Input Bridge Maximum Non-Repetitive
Surge Current (per Junction))
Revision: 10-Jun-15
Document Number: 95708
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VS-100MT060WSP
ZthJC - Thermal Impedance (°C/W)
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10
Steady State Value
Rthjc = 0.81°C
(DC Operation)
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
160
200
140
180
TJ = 25 °C
160
120
140
DC
100
TJ = 125 °C
120
IC (A)
Allowable Case Temperature (°C)
Fig. 5 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Input Bridge Thermal Impedance ZthJC Characteristics (per Junction))
80
100
TJ = 150 °C
80
60
60
40
40
20
20
0
0
0
10 20 30 40 50 60 70 80 90 100 110 120
0
1.0
2.0
IC - Continuous Collector Current (A)
3.0
4.0
5.0
6.0
VCE (V)
Fig. 6 - Allowable Case Temperature vs. Continuous Collector
Current (Maximum PFC IGBT Continuous Collector Current vs.
Case Temperature)
Fig. 8 - IC vs. VCE
(Typical PFC IGBT Output Characteristics, VGE = 15 V)
200
1000
VGE = 12 V
VGE = 15 V
VGE = 18 V
180
160
100
VGE = 9 V
140
IC (A)
IC (A)
120
10
100
80
60
1
40
20
0.1
0
1
10
100
1000
0
1.0
2.0
3.0
4.0
5.0
6.0
VCE (V)
VCE (V)
Fig. 7 - IC vs. VCE
(PFC IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V)
Fig. 9 - IC vs. VCE
(Typical PFC IGBT Output Characteristics, TJ = 125 °C)
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Document Number: 95708
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100
100
VCE = 20 V
90
80
80
70
70
TJ = 25 °C
60
TJ = 125 °C
IF (A)
IC (A)
60
TJ = 125 °C
90
50
40
TJ = 150 °C
50
40
TJ = 25 °C
30
30
20
20
10
10
0
0
2
3
4
5
6
7
8
0
0.5
1.0
1.5
VGE (V)
2.5
3.0
VFM (V)
Fig. 10 - IC vs. VGE
(Typical PFC IGBT Transfer Characteristics)
Fig. 13 - IF vs. VFM
(Typical Antiparallel Diode Forward Characteristics)
160
Allowable Case Temperature (°C)
5.0
4.5
TJ = 25 °C
4.0
VGEth (V)
2.0
3.5
TJ = 125 °C
3.0
2.5
2.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
140
120
DC
100
80
60
40
20
0
1.0
0
2
4
6
8
10
12
14
16
18
20
IC (mA)
IF - Continuous Forward Current (A)
Fig. 11 - VGEth vs. IC
(Typical PFC IGBT Gate Threshold Voltage)
Fig. 14 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum Antiparallel Diode Continuous
Forward Current vs. Case Temperature)
10
200
180
TJ = 150 °C
1
160
TJ = 150 °C
0.1
120
IF (A)
ICES (mA)
140
TJ = 125 °C
0.01
TJ = 125 °C
100
TJ = 25 °C
80
60
TJ = 25 °C
0.001
40
20
0.0001
0
100
200
300
400
500
600
VCES (V)
Fig. 12 - ICES vs. VCES
(Typical PFC IGBT Zero Gate Voltage Collector Current)
0
0.5
1.0
1.5
2.0
2.5
VFM (V)
Fig. 15 - IF vs. VFM
(Typical PFC Diode Forward Characteristics)
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1000
140
td(off)
120
Switching Time (ns)
Allowable Case Temperature (°C)
160
DC
100
80
60
40
td(on)
100
tf
tr
20
0
10
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
160
IF - Continuous Forward Current (A)
IC (A)
Fig. 16 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum PFC Diode Continuous Forward Current
vs. Case Temperature)
Fig. 19 - Switching Time vs. IC
(Typical PFC IGBT Switching Time vs. IC)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
1
4.5
4
TJ = 150 °C
3.5
3
TJ = 125 °C
0.01
Energy (mJ)
IRM (mA)
0.1
0.001
2.5
2
Eoff
1.5
Eon
1
0.0001
TJ = 25 °C
0.5
0.00001
0
100
200
300
400
500
0
600
5
10
15
20
25
30
35
40
45
50
VR (V)
Rg (Ω)
Fig. 17 - IRM vs. VR
(Typical PFC Diode Reverse Leakage Current)
Fig. 20 - Energy Loss vs. Rg
(Typical PFC IGBT Energy Loss vs. Rg)
TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH
3
10 000
Switching Time (ns)
2.5
Energy (mJ)
2
1.5
Eoff
1
Eon
1000
td(off)
td(on)
100
tr
tf
0.5
0
10
20
40
60
80
100
120
140
160
IC (A)
Fig. 18 - Energy Loss vs. IC
(Typical PFC IGBT Energy Loss vs. IC)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
0
5
10
15
20
25
30
35
40
45
50
Rg (Ω)
Fig. 21 - Switching Time vs. Rg
(Typical PFC IGBT Switching Time vs. Rg)
TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH
Revision: 10-Jun-15
Document Number: 95708
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200
200
180
180
TJ = 125 °C
140
140
trr (ns)
trr (ns)
TJ = 125 °C
160
160
120
120
100
TJ = 25 °C
100
80
80
60
40
60
100
200
300
400
100
500
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 22 - trr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Time vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 25 - trr vs. dIF/dt
(Typical PFC Diode Reverse Recovery Time vs. dIF/dt)
Vrr = 200 V, IF = 50 A
30
28
26
24
22
20
18
16
14
12
10
8
6
4
TJ = 125 °C
Irr (A)
Irr (A)
TJ = 25 °C
TJ = 25 °C
100
200
300
400
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
500
TJ = 125 °C
TJ = 25 °C
100
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 23 - Irr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Current vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 26 - Irr vs. dIF/dt
(Typical PFC Diode Reverse Recovery Current vs. dIF/dt)
Vrr = 200 V, IF = 50 A
1900
2000
1700
1800
TJ = 125 °C
1600
TJ = 125 °C
1500
1400
Qrr (nC)
Qrr (nC)
1300
1100
900
1200
1000
800
600
700
TJ = 25 °C
400
500
TJ = 25 °C
200
300
0
100
200
300
400
500
100
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 24 - Qrr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 27 - Qrr vs dIF/dt
(Typical PFC Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 50 A
Revision: 10-Jun-15
Document Number: 95708
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100MT060WSP
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 28 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Thermal Impedance ZthJC Characteristics - (PFC IGBT))
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 29 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Thermal Impedance ZthJC Characteristics - (PFC Diode))
CIRCUIT CONFIGURATION
G1
H1
A1
B1
D1
D3
E7
D6
Th
M1
M3
A4
F7
Q1
C4
D5
H7
D2
D4
M7
A7
C7
D1
E1
Revision: 10-Jun-15
Document Number: 95708
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100MT060WSP
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION
Device code
VS-
100
MT
060
W
SP
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (100 = 100 A)
3
-
Essential part number (MT = MTP package)
4
-
Voltage code (060 = 600 V)
5
-
Die IGBT technology (W = Warp Speed IGBT)
6
-
Circuit configuration (SP = Single Phase Bridge plus PFC)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95383
Revision: 10-Jun-15
Document Number: 95708
10
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MTP - Full Pin
DIMENSIONS in millimeters
3.0
2.1
1.5
z detail
12 ± 0.3
39.5 ± 0.3
6
12 ± 0.3
Ø 1.1 ± 0.025
3
Use self taping screw
or M2.5 x X.
e.g. M2.5 x 6 or M2.5 x 8
according to PCB thickness used
17 ± 0.3
2.5 ± 0.1
45 ± 0.1
63.5 ± 0.15
0.8 Ra
1.3
21.1
7.4
48.7 ± 0.3
Ø 1 ± 0.025
+ 0.5
- 0.2
4.1
A B C D E F G H I L M
1
45°
19.8 ± 0.1
2
27.5 ± 0.3
31.8 ± 0.15
3
7.6
4
15.2
5
22.8
Ø 5 (x 4)
33.2 ± 0.3
6
7
5.2
Ø 2.1 (x 4)
R2.6 (x 2)
6
12
Pins position
with tolerance
Ø 0.5
22.8 ± 0.5
Ground pin
18
24
7
30
20
Document Number: 95383
Revision: 19-Nov-10
For technical questions, contact: [email protected]
www.vishay.com
1
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Revision: 02-Oct-12
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Document Number: 91000