VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt® hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor • Isolated baseplate MTP (Package example) • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY INPUT BRIDGE DIODE, TJ = 150 °C VRRM BENEFITS 1200 V lO at 80 °C 50 A VFM at 25 °C at 70 A 1.31 V • Lower conduction losses and switching losses • Higher switching frequency up to 150 kHz PFC IGBT, TJ = 150 °C • Optimized for welding, UPS, and SMPS applications VCES 600 V VCE(on) at 25 °C at 60 A 2.14 V IC at 80°C 73 A • PCB solderable terminals • Direct mounting to heatsink FRED Pt® PFC DIODE, TJ = 150 °C VR 600 V IF(DC) at 80 °C 79 A VF at 25 °C at 40 A 1.44 V FRED Pt® AP DIODE, TJ = 150 °C VR 600 V IF(DC) at 80 °C 11 A VF at 25 °C at 5 A 1.1 V Speed 30 kHz to 150 kHz Package MTP Circuit Input rectifier bridge ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Input Rectifier Bridge Maximum average output current TJ = 150 °C maximum Surge current (Non-repetitive) Maximum I2t for fusing PFC IGBT SYMBOL IO IFSM I2t Collector to emitter voltage VCES Gate to emitter voltage VGE Maximum continuous collector current at VGE = 15 V, TJ = 150 °C maximum Pulsed collector current TEST CONDITIONS VRRM IC ILM Maximum power dissipation PD UNITS 1200 V TC = 80 °C 50 Rated VRRM applied 270 10 ms, sine pulse 364 TJ = 25 °C 600 ± 20 TC = 25 °C TC = 80 °C ICM (1) Clamped inductive load current MAX. A A2s V 107 73 300 A 300 TC = 25 °C 403 W Revision: 10-Jun-15 Document Number: 95708 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak reverse voltage PFC Diode AP Diode TEST CONDITIONS VRRM Maximum continuous forward current TJ = 150 °C maximum IF Maximum power dissipation PD Maximum non-repetitive peak current IFSM Repetitive peak reverse voltage VRRM Maximum continuous forward current TJ = 150 °C maximum IF Maximum power dissipation PD Maximum non-repetitive peak current IFSM Maximum operating junction temperature MAX. UNITS 600 V TC = 25 °C 121 TC = 80 °C 79 TC = 25 °C 154 W 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 480 A 600 V A TC = 25 °C 17 TC = 80 °C 11 TC = 25 °C 24 W 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 60 A A TJ 150 Storage temperature range TStg -40 to +150 RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s °C 3500 W Notes • Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 400 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C R CONDUCTION PER JUNCTION - INPUT RECTIFIER BRIDGE DEVICES 100MT060WSP SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.396 0.454 0.563 0.763 1.099 0.290 0.471 0.599 0.782 1.107 °C/W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Blocking voltage Input Rectifier Bridge (per diode) BVRRM Reverse leakage current IRRM Forward voltage drop VFM Forward slope resistance rt Conduction threshold voltage VT Collector to emitter breakdown voltage PFC IGBT SYMBOL BVCES TEST CONDITIONS MIN. TYP. 1200 - - VRRM = 1200 V - 0.0015 0.13 VRRM = 1200 V, TJ = 150 °C - 1.0 - IF = 70 A - 1.31 1.45 IF = 70 A, TJ = 150 °C - 1.34 - - - 8.92 m - - 0.83 V 600 - - V IC = 500 μA (25 °C to 125 °C) - 0.6 - V/°C VGE = 15 V, IC = 60 A - 2.14 2.49 VGE = 15 V, lC = 60 A, TJ = 125 °C - 2.58 - IR = 100 μA TJ = 150 °C VGE = 0 V, IC = 1 mA MAX. UNITS V mA V Temperature coefficient of breakdown voltage VBR(CES)/TJ Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) VCE = VGE, IC = 500 μA 2.9 3.8 6.0 V VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10.3 - mV/°C Forward transconductance gfe VCE = 20 V, IC = 60 A - 75 - S Transfer characteristics VGE VCE = 20 V, IC = 60 A - 5.7 - V VGE = 0 V, VCE = 600 V - 0.008 0.1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.23 - VGE = ± 20 V - - ± 200 Temperature coefficient of threshold voltage Collector to emitter leakage current ICES Gate to emitter leakage IGES V mA nA Revision: 10-Jun-15 Document Number: 95708 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward voltage drop PFC Diode AP Diode Blocking voltage VFM BVRM Reverse leakage current IRM Forward voltage drop VFM MIN. TYP. MAX. UNITS IF = 40 A TEST CONDITIONS - 1.44 2.38 IF = 40 A, TJ = 125 °C - 1.07 - 600 - - IR = 200 μA V VRRM = 600 V - 0.16 120 μA VRRM = 600 V, TJ = 125 °C - 0.04 - mA IF = 5 A - 1.1 1.27 IF = 5 A, TJ = 125 °C - 0.97 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc IC = 50 A VCC = 400 V VGE = 15 V MIN. TYP. - 480 MAX. UNITS - - 82 - - 168 - Turn-on switching loss Eon - 0.4 - Turn-off switching loss Eoff - 1.12 - Total switching loss Etot - 1.52 - Turn-on delay time td(on) - 137 - - 52 - td(off) - 341 - Rise time tr Turn-off delay time Fall time Turn-on switching loss PFC IGBT TEST CONDITIONS IC = 100 A, VCC = 300 V, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 25 °C (1) tf - 52 - Eon - 0.66 - Turn-off switching loss Eoff - 1.29 - Total switching loss Etot - 1.95 - Turn-on delay time td(on) - 134 - - 53 - - 352 - Rise time tr Turn-off delay time IC = 100 A, VCC = 300 V, VGE = 15 V, Rg = 4.7 , L = 500 μH, TJ = 125 °C (1) td(off) Fall time tf - 58 - Input capacitance Cies - 9500 - Output capacitance Coes - 780 - Reverse transfer capacitance Cres - 116 - Reverse bias safe operating area RBSOA VGE = 0 V VCC = 30 V f = 1 MHz IC = 300 A, VCC = 400 V, VP = 600 V, Rg = 22 , VGE = 15 V, L = 500 μH, TJ = 150 °C nC mJ ns mJ ns pF Full square RECOVERY PARAMETER Peak reverse recovery current PFC Diode AP Diode Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr IF = 50 A dI/dt = 200 A/μs Vrr = 200 V - 5.4 - IF = 50 A, TJ = 125 °C dI/dt = 200 A/μs Vrr = 200 V IF = 10 A dI/dt = 200 A/μs Vrr = 200 V A - 72 - ns - 194 - nC - 16 - A - 159 - ns - 1280 - nC - 10 - A - 101 - ns - 500 - nC Note (1) Energy losses include “tail” and diode reverse recovery. THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R TJ = 25 °C - 30 000 - B value B TJ = 25 °C/TJ = 85 °C - 4000 - K Revision: 10-Jun-15 Document Number: 95708 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Input Rectifier Bridge Junction to case thermal resistance per diode PFC IGBT Junction to case IGBT thermal resistance PFC Diode Junction to case PFC diode thermal resistance AP Diode Junction to case AP diode thermal resistance RthJC Case to sink, flat, greased surface per module Mounting torque ± 10 % to heatsink RthCS (1) Approximate weight MIN. TYP. MAX. - - 0.81 UNITS - - 0.31 - - 0.58 - - 5.1 - 0.06 - °C/W - - 4 Nm - 65 - g °C/W 160 Instantaneous On-State Current (A) Maximum Allowable Case Temperature (°C) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 140 120 100 180° (Rect.) 80 180° (Sine) 60 40 20 0 0 10 20 30 40 50 60 70 80 1000 100 TJ = 150 °C 10 TJ = 25 °C 1 0 90 100 1.0 1.5 2.0 2.5 3.0 Fig. 3 - Instantaneous On-State Current vs. Instantaneous Voltage Drop (Single Phase Input Bridge On-State Voltage Drop Characteristics) Fig. 1 - Maximum Allowable Case Temperature vs. Average Output Current (Single Phase Input Bridge Output Current Ratings Characteristics) 325 400 350 300 180° (Sine) 250 180° (Rect.) 200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 IO - Total Output Current (A) Fig. 2 - Maximum Average On-State Power Loss vs. Total Output Current (Single Phase Input Bridge On-State Power Loss Characteristics) Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) 0.5 Instantaneous Voltage Drop (V) IO - Average Output Current (A) 300 275 At any rated load condition and with rated VRRM applied following surgel Initial TJ = TJ max. 250 225 200 175 No voltage reapplied Rated VRRM reapplied 150 125 100 75 50 0.01 0.1 1 Pulse Train Duration (s) Fig. 4 - Peak Wave On-State Current vs. Pulse Train Duration (Single Phase Input Bridge Maximum Non-Repetitive Surge Current (per Junction)) Revision: 10-Jun-15 Document Number: 95708 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 10 Steady State Value Rthjc = 0.81°C (DC Operation) 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 160 200 140 180 TJ = 25 °C 160 120 140 DC 100 TJ = 125 °C 120 IC (A) Allowable Case Temperature (°C) Fig. 5 - ZthJC vs. t1 Rectangular Pulse Duration (Maximum Input Bridge Thermal Impedance ZthJC Characteristics (per Junction)) 80 100 TJ = 150 °C 80 60 60 40 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 0 1.0 2.0 IC - Continuous Collector Current (A) 3.0 4.0 5.0 6.0 VCE (V) Fig. 6 - Allowable Case Temperature vs. Continuous Collector Current (Maximum PFC IGBT Continuous Collector Current vs. Case Temperature) Fig. 8 - IC vs. VCE (Typical PFC IGBT Output Characteristics, VGE = 15 V) 200 1000 VGE = 12 V VGE = 15 V VGE = 18 V 180 160 100 VGE = 9 V 140 IC (A) IC (A) 120 10 100 80 60 1 40 20 0.1 0 1 10 100 1000 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE (V) VCE (V) Fig. 7 - IC vs. VCE (PFC IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V) Fig. 9 - IC vs. VCE (Typical PFC IGBT Output Characteristics, TJ = 125 °C) Revision: 10-Jun-15 Document Number: 95708 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors 100 100 VCE = 20 V 90 80 80 70 70 TJ = 25 °C 60 TJ = 125 °C IF (A) IC (A) 60 TJ = 125 °C 90 50 40 TJ = 150 °C 50 40 TJ = 25 °C 30 30 20 20 10 10 0 0 2 3 4 5 6 7 8 0 0.5 1.0 1.5 VGE (V) 2.5 3.0 VFM (V) Fig. 10 - IC vs. VGE (Typical PFC IGBT Transfer Characteristics) Fig. 13 - IF vs. VFM (Typical Antiparallel Diode Forward Characteristics) 160 Allowable Case Temperature (°C) 5.0 4.5 TJ = 25 °C 4.0 VGEth (V) 2.0 3.5 TJ = 125 °C 3.0 2.5 2.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 140 120 DC 100 80 60 40 20 0 1.0 0 2 4 6 8 10 12 14 16 18 20 IC (mA) IF - Continuous Forward Current (A) Fig. 11 - VGEth vs. IC (Typical PFC IGBT Gate Threshold Voltage) Fig. 14 - Allowable Case Temperature vs. Continuous Forward Current (Maximum Antiparallel Diode Continuous Forward Current vs. Case Temperature) 10 200 180 TJ = 150 °C 1 160 TJ = 150 °C 0.1 120 IF (A) ICES (mA) 140 TJ = 125 °C 0.01 TJ = 125 °C 100 TJ = 25 °C 80 60 TJ = 25 °C 0.001 40 20 0.0001 0 100 200 300 400 500 600 VCES (V) Fig. 12 - ICES vs. VCES (Typical PFC IGBT Zero Gate Voltage Collector Current) 0 0.5 1.0 1.5 2.0 2.5 VFM (V) Fig. 15 - IF vs. VFM (Typical PFC Diode Forward Characteristics) Revision: 10-Jun-15 Document Number: 95708 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors 1000 140 td(off) 120 Switching Time (ns) Allowable Case Temperature (°C) 160 DC 100 80 60 40 td(on) 100 tf tr 20 0 10 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 160 IF - Continuous Forward Current (A) IC (A) Fig. 16 - Allowable Case Temperature vs. Continuous Forward Current (Maximum PFC Diode Continuous Forward Current vs. Case Temperature) Fig. 19 - Switching Time vs. IC (Typical PFC IGBT Switching Time vs. IC) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 1 4.5 4 TJ = 150 °C 3.5 3 TJ = 125 °C 0.01 Energy (mJ) IRM (mA) 0.1 0.001 2.5 2 Eoff 1.5 Eon 1 0.0001 TJ = 25 °C 0.5 0.00001 0 100 200 300 400 500 0 600 5 10 15 20 25 30 35 40 45 50 VR (V) Rg (Ω) Fig. 17 - IRM vs. VR (Typical PFC Diode Reverse Leakage Current) Fig. 20 - Energy Loss vs. Rg (Typical PFC IGBT Energy Loss vs. Rg) TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH 3 10 000 Switching Time (ns) 2.5 Energy (mJ) 2 1.5 Eoff 1 Eon 1000 td(off) td(on) 100 tr tf 0.5 0 10 20 40 60 80 100 120 140 160 IC (A) Fig. 18 - Energy Loss vs. IC (Typical PFC IGBT Energy Loss vs. IC) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 0 5 10 15 20 25 30 35 40 45 50 Rg (Ω) Fig. 21 - Switching Time vs. Rg (Typical PFC IGBT Switching Time vs. Rg) TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH Revision: 10-Jun-15 Document Number: 95708 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors 200 200 180 180 TJ = 125 °C 140 140 trr (ns) trr (ns) TJ = 125 °C 160 160 120 120 100 TJ = 25 °C 100 80 80 60 40 60 100 200 300 400 100 500 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 22 - trr vs. dIF/dt (Typical Antiparallel Diode Reverse Recovery Time vs. dIF/dt) Vrr = 200 V, IF = 10 A Fig. 25 - trr vs. dIF/dt (Typical PFC Diode Reverse Recovery Time vs. dIF/dt) Vrr = 200 V, IF = 50 A 30 28 26 24 22 20 18 16 14 12 10 8 6 4 TJ = 125 °C Irr (A) Irr (A) TJ = 25 °C TJ = 25 °C 100 200 300 400 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 500 TJ = 125 °C TJ = 25 °C 100 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 23 - Irr vs. dIF/dt (Typical Antiparallel Diode Reverse Recovery Current vs. dIF/dt) Vrr = 200 V, IF = 10 A Fig. 26 - Irr vs. dIF/dt (Typical PFC Diode Reverse Recovery Current vs. dIF/dt) Vrr = 200 V, IF = 50 A 1900 2000 1700 1800 TJ = 125 °C 1600 TJ = 125 °C 1500 1400 Qrr (nC) Qrr (nC) 1300 1100 900 1200 1000 800 600 700 TJ = 25 °C 400 500 TJ = 25 °C 200 300 0 100 200 300 400 500 100 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 24 - Qrr vs. dIF/dt (Typical Antiparallel Diode Reverse Recovery Charge vs. dIF/dt) Vrr = 200 V, IF = 10 A Fig. 27 - Qrr vs dIF/dt (Typical PFC Diode Reverse Recovery Charge vs. dIF/dt) Vrr = 200 V, IF = 50 A Revision: 10-Jun-15 Document Number: 95708 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 t1 - Rectangular Pulse Duration (s) Fig. 28 - ZthJC vs. t1 Rectangular Pulse Duration (Maximum Thermal Impedance ZthJC Characteristics - (PFC IGBT)) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 29 - ZthJC vs. t1 Rectangular Pulse Duration (Maximum Thermal Impedance ZthJC Characteristics - (PFC Diode)) CIRCUIT CONFIGURATION G1 H1 A1 B1 D1 D3 E7 D6 Th M1 M3 A4 F7 Q1 C4 D5 H7 D2 D4 M7 A7 C7 D1 E1 Revision: 10-Jun-15 Document Number: 95708 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100MT060WSP www.vishay.com Vishay Semiconductors ORDERING INFORMATION Device code VS- 100 MT 060 W SP 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (100 = 100 A) 3 - Essential part number (MT = MTP package) 4 - Voltage code (060 = 600 V) 5 - Die IGBT technology (W = Warp Speed IGBT) 6 - Circuit configuration (SP = Single Phase Bridge plus PFC) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95383 Revision: 10-Jun-15 Document Number: 95708 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP - Full Pin DIMENSIONS in millimeters 3.0 2.1 1.5 z detail 12 ± 0.3 39.5 ± 0.3 6 12 ± 0.3 Ø 1.1 ± 0.025 3 Use self taping screw or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8 according to PCB thickness used 17 ± 0.3 2.5 ± 0.1 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 21.1 7.4 48.7 ± 0.3 Ø 1 ± 0.025 + 0.5 - 0.2 4.1 A B C D E F G H I L M 1 45° 19.8 ± 0.1 2 27.5 ± 0.3 31.8 ± 0.15 3 7.6 4 15.2 5 22.8 Ø 5 (x 4) 33.2 ± 0.3 6 7 5.2 Ø 2.1 (x 4) R2.6 (x 2) 6 12 Pins position with tolerance Ø 0.5 22.8 ± 0.5 Ground pin 18 24 7 30 20 Document Number: 95383 Revision: 19-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000