VS-GB100LH120N Datasheet

VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
Chopper in1 Package, 1200 V and 100 A
FEATURES
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
Double INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
1200 V
IC at TC = 80 °C
100 A
VCE(on) (typical)
at IC = 100 A, 25 °C
1.77 V
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Chopper low side switch
• AC inverter drives
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM (1)
UNITS
V
TC = 25 °C
200
TC = 80 °C
100
tp = 1 ms
200
TC = 80 °C
100
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
200
Maximum power dissipation
PD
TJ = 150 °C
833
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
f = 50 Hz, t = 1 min
2500
V
VR= 0 V, t = 10 ms, TJ = 125 °C
1700
A2s
RMS isolation voltage
I2t-value,
diode
VISOL
I2t
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 94753
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 100 A, TJ = 25 °C
-
1.77
-
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.0
-
5.0
6.2
7.0
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 2.0 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
1.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
75
-
tr
-
40
-
-
400
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 100 A, Rg = 8 ,
VGE = ± 15 V, TJ = 25 °C
-
60
-
Turn-on switching loss
Eon
-
6.0
-
Turn-off switching loss
Eoff
-
3.7
-
Turn-on delay time
td(on)
-
80
-
tr
-
50
-
-
420
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 100 A, Rg = 8 ,
VGE = ± 15 V, TJ = 125 °C
-
65
-
Turn-on switching loss
Eon
-
8.4
-
Turn-off switching loss
Eoff
-
5.8
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
RGINT
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
8.96
-
-
0.96
-
-
0.45
-
-
540
-
A
-
5
-

-
-
20
nH
-
0.35
-
m
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 100 A
IF = 100 A, VR = 600 V,
dI/dt = -3600 A/μs,
VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.98
-
TJ = 125 °C
-
2.21
-
TJ = 25 °C
-
10
-
TJ = 125 °C
-
16
-
TJ = 25 °C
-
90
-
TJ = 125 °C
-
120
-
TJ = 25 °C
-
3.5
-
TJ = 125 °C
-
6.0
-
V
μC
A
mJ
Revision: 10-Jun-15
Document Number: 94753
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
MIN.
TYP.
MAX.
TJ
-40
-
150
TSTG
-40
-
125
-
-
0.15
-
-
0.29
-
0.035
-
°C
IGBT part, per 1/2 module
Junction to case
Diode part, per 1/2 module
Case to sink
RthJC
RthCS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
300
300
35
250
30
EON, EOFF (mJ)
150
125 °C
100
50
g
VCC = 600 V
RG = 8 Ω
VGE = ± 15 V
TJ = 125 °C
25
25 °C
200
IC (A)
K/W
Nm
Weight
20
Eon
15
10
Eoff
5
VGE = 15 V
0
0
0
1
2
3
4
0
5
50
100
150
200
IC (A)
VCE (V)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
20
200
VCE = 20 V
18
160
VCC = 600 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
EON, EOFF (mJ)
16
125 °C
140
IC (A)
UNITS
120
80
14
12
Eon
10
8
6
25 °C
40
4
Eoff
2
0
0
0 1
2
3
4
5
6
7
8
9 10 11 12 13
0
5
10
15
20
VGE (V)
Rg (Ω)
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. Rg
25
Revision: 10-Jun-15
Document Number: 94753
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
20
103
VCC = 600 V
td(off)
t (ns)
VGE (V)
15
10
102
td(on)
tr
5
IC = 100 A
TJ = 25 °C
0
0
0.2
0.4
0.6
0.8
101
1
tf
VCC = 600 V
Rg = 8 Ω
VGE = ± 15 V
TJ = 125 °C
0
50
100
Qg (μC)
150
200
IC (A)
Fig. 5 - Gate Charge Characteristics
Fig. 7 - Typical Switching Times vs. IC
101
103
td(off)
Coes
t (ns)
VCE (V)
Cies
100
102
td(on)
tr
Cres
10-1
5
10
15
20
25
30
35
tf
VCC = 600 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
101
0
250
0
10
20
30
Rg (Ω)
C (nF)
Fig. 8 - Typical Switching Times vs. Gate Resistance Rg
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
200
IF (A)
150
25 °C
100
125 °C
50
0
0
1
2
3
4
VF (V)
Fig. 9 - Typical Forward Characteristics (Diode)
Revision: 10-Jun-15
Document Number: 94753
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB100LH120N
www.vishay.com
Vishay Semiconductors
ZthJC - Thermal Impedance (K/W)
100
Diode
10-1
IGBT
10-2
10-3
10-4
10-5
10-4
10-2
10-3
10-1
100
tp (s)
Fig. 10 - Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 10-Jun-15
Document Number: 94753
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000