VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V IC at TC = 80 °C 100 A VCE(on) (typical) at IC = 100 A, 25 °C 1.77 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Chopper low side switch • AC inverter drives • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 200 TC = 80 °C 100 tp = 1 ms 200 TC = 80 °C 100 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 200 Maximum power dissipation PD TJ = 150 °C 833 W Short circuit withstand time tSC TJ = 125 °C 10 μs f = 50 Hz, t = 1 min 2500 V VR= 0 V, t = 10 ms, TJ = 125 °C 1700 A2s RMS isolation voltage I2t-value, diode VISOL I2t Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94753 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.77 - VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.0 - 5.0 6.2 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 2.0 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 75 - tr - 40 - - 400 - td(off) TEST CONDITIONS VCC = 600 V, IC = 100 A, Rg = 8 , VGE = ± 15 V, TJ = 25 °C - 60 - Turn-on switching loss Eon - 6.0 - Turn-off switching loss Eoff - 3.7 - Turn-on delay time td(on) - 80 - tr - 50 - - 420 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 100 A, Rg = 8 , VGE = ± 15 V, TJ = 125 °C - 65 - Turn-on switching loss Eon - 8.4 - Turn-off switching loss Eoff - 5.8 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V RGINT LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 8.96 - - 0.96 - - 0.45 - - 540 - A - 5 - - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 100 A IF = 100 A, VR = 600 V, dI/dt = -3600 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.98 - TJ = 125 °C - 2.21 - TJ = 25 °C - 10 - TJ = 125 °C - 16 - TJ = 25 °C - 90 - TJ = 125 °C - 120 - TJ = 25 °C - 3.5 - TJ = 125 °C - 6.0 - V μC A mJ Revision: 10-Jun-15 Document Number: 94753 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ -40 - 150 TSTG -40 - 125 - - 0.15 - - 0.29 - 0.035 - °C IGBT part, per 1/2 module Junction to case Diode part, per 1/2 module Case to sink RthJC RthCS Conductive grease applied Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque 300 300 35 250 30 EON, EOFF (mJ) 150 125 °C 100 50 g VCC = 600 V RG = 8 Ω VGE = ± 15 V TJ = 125 °C 25 25 °C 200 IC (A) K/W Nm Weight 20 Eon 15 10 Eoff 5 VGE = 15 V 0 0 0 1 2 3 4 0 5 50 100 150 200 IC (A) VCE (V) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 20 200 VCE = 20 V 18 160 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C EON, EOFF (mJ) 16 125 °C 140 IC (A) UNITS 120 80 14 12 Eon 10 8 6 25 °C 40 4 Eoff 2 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 5 10 15 20 VGE (V) Rg (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. Rg 25 Revision: 10-Jun-15 Document Number: 94753 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LH120N www.vishay.com Vishay Semiconductors 20 103 VCC = 600 V td(off) t (ns) VGE (V) 15 10 102 td(on) tr 5 IC = 100 A TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 101 1 tf VCC = 600 V Rg = 8 Ω VGE = ± 15 V TJ = 125 °C 0 50 100 Qg (μC) 150 200 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Times vs. IC 101 103 td(off) Coes t (ns) VCE (V) Cies 100 102 td(on) tr Cres 10-1 5 10 15 20 25 30 35 tf VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C 101 0 250 0 10 20 30 Rg (Ω) C (nF) Fig. 8 - Typical Switching Times vs. Gate Resistance Rg Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage 200 IF (A) 150 25 °C 100 125 °C 50 0 0 1 2 3 4 VF (V) Fig. 9 - Typical Forward Characteristics (Diode) Revision: 10-Jun-15 Document Number: 94753 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LH120N www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (K/W) 100 Diode 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 10-Jun-15 Document Number: 94753 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000