SQ4064EY www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 60 RDS(on) () at VGS = 10 V 0.0198 RDS(on) () at VGS = 4.5 V 0.0212 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 12 Configuration Single D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free and Halogen-free SQ4064EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 12 IS 6.2 25 IAS 31 PD V 6.9 IDM EAS UNIT 26 6.8 2.2 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 85 RthJF 22 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountb °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. S13-0951-Rev. A,06-May-13 Document Number: 62842 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4064EY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 60 - - 1.5 2 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1.0 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 6.1 A - 0.0165 0.0198 VGS = 10 V ID = 6.1 A, TJ = 125 °C - - 0.0350 VGS = 10 V ID = 6.1 A, TJ = 175 °C - - 0.0440 VGS = 4.5 V ID = 5.9 A - 0.0177 0.0212 - 85 - - 1677 2096 - 142 178 - 58 73 VDS = 15 V, ID = 6.1 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 6 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 30 ID 1 A, VGEN = 10 V, Rg = 1 tf - 29 43 - 5.5 - - 3.9 - 0.4 0.8 1.6 - 16 24 - 9.5 14 - 33 49 - 13 22 pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 1.7 A, VGS = 0 - - 48 A - 0.8 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0951-Rev. A,06-May-13 Document Number: 62842 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4064EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 8 24 16 8 VGS = 3 V TC = 125 °C 0 TC = - 55 °C 0 0 2 4 6 8 10 0 1 2 3 VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8.0 0.04 RDS(on) - On-Resistance (Ω) 0.05 6.0 TC = 25 °C 4.0 5 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 2.0 4 VGS - Gate-to-Source Voltage (V) 10.0 ID - Drain Current (A) TC = 25 °C TC = 125 °C TC = - 55 °C 0.00 0.0 0 1 2 3 4 0 5 10 VGS - Gate-to-Source Voltage (V) 50 2500 2000 C - Capacitance (pF) 100 gfs - Transconductance (S) 40 On-Resistance vs. Drain Current TC = - 55 °C TC = 25 °C 30 ID - Drain Current (A) Transfer Characteristics 125 20 75 TC = 125 °C 50 Ciss 1500 1000 500 25 Coss Crss 0 0 0 5 10 15 ID - Drain Current (A) Transconductance S13-0951-Rev. A,06-May-13 20 25 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62842 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4064EY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 6 A VDS = 30 V 8 10 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 10 6 4 2 1 0.1 TJ = 25 °C 0.01 0 0.001 0 6 12 18 24 30 0.0 0.2 0.4 0.8 1.0 VSD - Source-to-Drain Voltage (V) Gate Charge Source Drain Diode Forward Voltage 1.2 0.6 ID = 10 A 0.3 VGS(th) Variance (V) 2.1 VGS = 4.5 V 1.7 VGS = 10 V 1.3 0.0 ID = 5 mA - 0.3 - 0.6 ID = 250 μA 0.9 - 0.9 - 1.2 0.5 - 50 - 25 0 25 50 75 100 125 150 - 50 - 25 175 0 TJ - Junction Temperature (°C) 25 50 75 100 125 150 175 125 150 175 TJ - Temperature (°C) Threshold Voltage On-Resistance vs. Junction Temperature 0.10 VDS - Drain-to-Source Voltage (V) 90 0.08 RDS(on) - On-Resistance (Ω) 0.6 Qg - Total Gate Charge (nC) 2.5 RDS(on) - On-Resistance (Normalized) TJ = 150 °C 0.06 TJ = 25 °C 0.04 0.02 ID = 1 mA 86 82 78 74 TJ = 150 °C 0.00 70 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature S13-0951-Rev. A,06-May-13 Document Number: 62842 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4064EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 100 μs IDM Limited ID - Drain Current (A) 10 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.01 1s 10 s, DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0951-Rev. A,06-May-13 Document Number: 62842 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4064EY www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62842. S13-0951-Rev. A,06-May-13 Document Number: 62842 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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