Transistors 2SD2620J Silicon NPN epitaxial planer type For low-frequency amplification 1.60+0.05 –0.03 1.00±0.05 ■ Features 0.12+0.03 –0.01 5° Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V Peak collector current ICP 50 mA Collector current IC 20 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.375) 1.60±0.05 0.10 max. ■ Absolute Maximum Ratings Ta = 25°C 0 to 0.02 (0.50)(0.50) (0.80) 2 0.70+0.05 –0.03 1 0.27±0.02 5° 0.85+0.05 –0.03 3 • High forward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • High emitter to base voltage VBEO • SS-mini type package Parameter 0.80±0.05 Unit: mm 1: Base 2: Emitter 3: Collector EIAJ: SC-81 SS-Mini Type Package Marking Symbol: 3B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 60 V, IE = 0 0.1 µA ICEO VCE = 60 V, IB = 0 1.0 µA Collector to base voltage VCBO IC = 10 µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1 mA, IB = 0 100 V Emitter to base voltage VEBO Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage IE = 10 µA, IC = 0 15 hFE VCE = 10 V, IC = 2 mA 400 VCE(sat) IC = 10 mA, IB = 1 mA 0.05 VCB = 10 V, IE = −2 mA, f = 200 MHz 200 MHz VCE = 10 V, IC = 1 mA, GB = 80 dB Rg = 100 kΩ, Function = FLAT 80 mV fT NV V 1 200 0.2 V 1