Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2406 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 Low noise voltage NV. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 insertion through the tape packing and the magazine packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 55 V Collector-emitter voltage VCEO 55 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Peak collector current ICP 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 55 V Collector-emitter voltage VCEO IC = 2 mA, IB = 0 55 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Base-emitter voltage VBE VCE = 1 V, IC = 100 mA 1.0 V Collector-base cutoff current ICBO VCB = 10 V, IE = 0 0.1 ìA Collector-emitter cutoff current ICEO VCE = 10 V, IB = 0 1 ìA hFE VCE = 5 V, IC = 2 mA Forward current transfer ratio 0.7 180 700 VCE(sat) IC = 100 mA, IB = -10 mA Collector-emitter saturation voltage Transition frequency fT Noise voltage NV 0.6 V VCB = 5 V, IE = -2 mA, f = 200 MHz 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB 110 mV Rg = 100 kÙ, Function = FLAT hFE Classification Marking TR TS TT hFE 180 360 260 520 360 700 www.kexin.com.cn 1