006 D-2 BAP55LX DF N1 Silicon PIN diode Rev. 4 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals Low diode capacitance Low forward resistance Very low series inductance For applications up to 3 GHz 1.3 Applications RF attenuators and switches 2. Pinning information Table 1. Pin Discrete pinning Description 1 cathode 2 anode Simplified outline Symbol [1] 1 2 Transparent top view [1] sym006 The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name BAP55LX Description DFN1006D-2 leadless ultra small plastic package; 2 terminals; body 1 0.6 0.4 mm Version SOD882D BAP55LX NXP Semiconductors Silicon PIN diode 4. Marking Table 3. Marking codes Type number Marking code[1] BAP55LX 1111 1101 [1] For SOD882D binary marking code description, see Figure 1. 4.1 Binary marking code description CATHODE BAR READING DIRECTION VENDOR CODE READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac477 Fig 1. SOD882D binary marking code description example 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VR reverse voltage Conditions - 50 V IF forward current - 100 mA Ptot total power dissipation - 135 mW Tstg storage temperature 65 +150 C Tj junction temperature 65 +150 C Typ Unit 78 K/W Tsp = 90 C 6. Thermal characteristics Table 5. BAP55LX Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 2 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 7. Characteristics Table 6. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR = 20 V - - 10 nA VR = 50 V - - 100 nA VR = 0 V - 0.28 - pF VR = 1 V - 0.23 - pF VR = 20 V - 0.18 0.28 pF IF = 0.5 mA - 3.3 4.5 IF = 1 mA - 2.2 3.3 IF = 10 mA - 0.8 1.2 IF = 100 mA - 0.5 0.8 Cd rD ISL Lins Lins Lins Lins diode capacitance diode forward resistance isolation insertion loss insertion loss insertion loss insertion loss see Figure 3; f = 1 MHz; see Figure 4; f = 100 MHz; see Figure 5; VR = 0 V; f = 900 MHz - 19 - dB f = 1800 MHz - 14 - dB f = 2450 MHz - 12 - dB f = 900 MHz - 0.24 - dB f = 1800 MHz - 0.25 - dB f = 2450 MHz - 0.26 - dB f = 900 MHz - 0.17 - dB f = 1800 MHz - 0.18 - dB f = 2450 MHz - 0.19 - dB f = 900 MHz - 0.08 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.10 - dB f = 900 MHz - 0.05 - dB f = 1800 MHz - 0.07 - dB f = 2450 MHz - 0.08 - dB see Figure 6; IF = 0.5 mA; see Figure 6; IF = 1 mA; see Figure 6; IF = 10 mA; see Figure 6; IF = 100 mA; L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 ; measured at IR = 3 mA 0.225 0.27 - s LS series inductance IF = 100 mA; f = 100 MHz - 0.4 - nH BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 3 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 001aan470 0.5 Cd (pF) 0.4 0.3 0.2 0.1 0 0 1000 2000 3000 4000 f (MHz) VR = 0 V; Tj = 25 C. Fig 2. Diode capacitance as a function of frequency; typical values 001aag762 400 Cd (fF) 001aag763 102 rD (Ω) 300 10 200 1 100 0 0 5 10 15 20 10−1 10−1 1 VR (V) If (mA) f = 1 MHz; Tj = 25 C. f = 100 MHz; Tj = 25 C. Fig 3. Diode capacitance as a function of reverse voltage; typical values BAP55LX Product data sheet 102 10 Fig 4. Forward resistance as a function of forward current; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 4 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 001aag764 0 001aag765 0 (1) Lins (dB) ISL (dB) (3) (2) −0.2 −10 (4) −0.4 −20 −0.6 −30 −40 −0.8 0 1000 2000 3000 −1.0 0 f (MHz) 1000 2000 3000 f (MHz) Tamb = 25 C Tamb = 25 C Diode zero biased and inserted in series with a 50 stripline circuit (1) IF = 100 mA (2) IF = 10 mA (3) IF = 1 mA (4) IF = 0.5 mA Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network Fig 5. Isolation of the diode as a function of frequency; typical values BAP55LX Product data sheet Fig 6. Insertion loss of the diode as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 5 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 7.1 S-parameters 7.1.1 Diode in series configuration 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 180° 0 0.2 0.4 +5 (5) (6) (7) 0.2 (2) (3) (4) 0.5 2 5 10 0° 0 −5 −0.2 (1) −135° −2 −0.5 −45° −1 −90° 1.0 001aan345 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0 mA (2) IF = 0.1 mA (3) IF = 0.5 mA (4) IF = 1 mA (5) IF = 5 mA (6) IF = 10 mA (7) IF = 100 mA Fig 7. BAP55LX Product data sheet Input reflection coefficient (S11); typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 6 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 (5) (6) (7) 180° 0 0.2 0.4 +5 0.2 (2) (3) (4) 0.5 2 5 10 0° 0 −5 −0.2 (1) −135° −2 −0.5 −45° −1 −90° 1.0 001aan347 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0 mA (2) IF = 0.1 mA (3) IF = 0.5 mA (4) IF = 1 mA (5) IF = 5 mA (6) IF = 10 mA (7) IF = 100 mA Fig 8. BAP55LX Product data sheet Output reflection coefficient (S22); typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 7 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 90° 135° 45° (1) −1.0 180° −0.8 −0.6 −0.4 −0.2 0 (2) (3) (4) (5) (6) (7) −135° 0° −45° −90° 001aan346 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0 mA (2) IF = 0.1 mA (3) IF = 0.5 mA (4) IF = 1 mA (5) IF = 5 mA (6) IF = 10 mA (7) IF = 100 mA Fig 9. BAP55LX Product data sheet Forward transmission coefficient (S21); typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 8 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 7.1.2 Diode in parallel configuration 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 180° 0 0.2 (1) (2) (3) (4) (5) (6) 0.5 0.2 1 2 5 10 0° 0 −5 −0.2 −135° 0.4 +5 −2 −0.5 −45° −1 −90° 1.0 001aan342 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0.1 mA (2) IF = 0.5 mA (3) IF = 1 mA (4) IF = 5 mA (5) IF = 10 mA (6) IF = 100 mA Fig 10. Input reflection coefficient (S11); typical values BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 9 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 180° 0 0.2 0.2 1 2 5 10 0° 0 −5 −0.2 −135° 0.4 +5 (1) (2) (3) (4) (5) 0.5 (6) −2 −0.5 −45° −1 −90° 1.0 001aan344 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0.1 mA (2) IF = 0.5 mA (3) IF = 1 mA (4) IF = 5 mA (5) IF = 10 mA (6) IF = 100 mA Fig 11. Output reflection coefficient (S22); typical values BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 10 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 90° 135° −1.0 180° −0.8 45° −0.6 −0.4 −0.2 0 (1) (2) (3) (4) (5) (6) −135° 0° −45° −90° 001aan343 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0.1 mA (2) IF = 0.5 mA (3) IF = 1 mA (4) IF = 5 mA (5) IF = 10 mA (6) IF = 100 mA Fig 12. Forward transmission coefficient (S21); typical values BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 11 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 8. Package outline DFN1006D-2: Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm SOD882D (2x) L1 (2x) w 1 2 A b (2x) (2x) w B e A A1 y A E D (2) B 0 Dimensions Unit mm max nom min A(1) 0.4 A1 b D E e L1 0.04 0.55 0.65 1.05 0.30 0.50 0.60 1.00 0.65 0.25 0.45 0.55 0.95 0.22 0.5 w y 0.1 0.03 Note 1. Dimension including plating thickness. 2. The marking bar indicates the cathode (if applicable). Outline version sod882d_po References IEC 1 mm scale JEDEC JEITA European projection Issue date 10-09-27 12-05-01 SOD882D Fig 13. Package outline SOD882D (DFN1006D-2) BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 12 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 9. Abbreviations Table 7. Abbreviations Acronym Description PIN P-type, Intrinsic, N-type SMD Surface Mounted Device RF Radio Frequency 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BAP55LX v.4 20130806 Product data sheet - BAP55LX v.3 Modifications: • • • • • Section 1.1 on page 1: Changed package to SOD882D Table 1 on page 1: Changed simplified outline to SOD882D Table 2 on page 1: Changed package to SOD882D Section 4 on page 2: Update ‘Marking’ section Section 8 on page 12: Changed package to SOD882D BAP55LX v.3 20110113 Product data sheet - BAP55LX v.2 BAP55LX v.2 20101216 Product data sheet - BAP55LX v.1 BAP55LX v.1 20070730 Product data sheet - - BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 13 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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This document supersedes and replaces all information supplied prior to the publication hereof. BAP55LX Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 14 of 16 BAP55LX NXP Semiconductors Silicon PIN diode Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAP55LX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 August 2013 © NXP B.V. 2013. All rights reserved. 15 of 16 BAP55LX NXP Semiconductors Silicon PIN diode 13. Contents 1 1.1 1.2 1.3 2 3 4 4.1 5 6 7 7.1 7.1.1 7.1.2 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Binary marking code description. . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Diode in series configuration . . . . . . . . . . . . . . 6 Diode in parallel configuration . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 August 2013 Document identifier: BAP55LX