SiZ900DT Datasheet

New Product
SiZ900DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) ()
ID (A)
0.0072 at VGS = 10 V
24a
0.0092 at VGS = 4.5 V
24a
0.0039 at VGS = 10 V
28a
0.0047 at VGS = 4.5 V
a
28
Qg (Typ.)
13.5 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
34 nC
• Notebook System Power
• POL
• Synchronous Buck Converter
D1
PowerPAIR® 6 x 5
Pin 1
G1
2
D1
G1
D1
N-Channel 1
MOSFET
D1
3
4
G2
S2
7
S1/D2
S1/D2
Pin 9
S2
8
5 mm
D1
1
G2
6 mm
S2
6
5
N-Channel 2
MOSFET
Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Unit
V
a
24
24a
28
28a
19b, c
15.5b, c
90
24a
28b, c
22b, c
110
3.8b, c
20
20
48
31
28a
4.3b, c
35
61
100
64
4.6b, c
3b, c
5.2b, c
3.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-2
30
± 20
a
IDM
Pulsed Drain Current
Channel-1
- 55 to 150
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
b, f
t  10 s
Symbol
RthJA
RthJC
Channel-2
Typ.
Max.
Typ.
Max.
22
2.1
27
2.6
19
1
24
1.25
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
ID = 250 µA
Ch-1
ID = 250 µA
Ch-2
32
ID = 250 µA
Ch-1
-6
V
32
mV/°C
ID = 250 µA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1.2
2.4
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
- 6.5
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
20
VDS 5 V, VGS = 10 V
Ch-2
25
V
nA
µA
5
A
VGS = 10 V, ID = 19.4 A
Ch-1
0.0059 0.0072
VGS = 10 V, ID = 20 A
Ch-2
0.0032 0.0039
VGS = 4.5 V, ID = 17.2 A
Ch-1
0.0075 0.0092
VGS = 4.5 V, ID = 20 A
Ch-2
0.0038 0.0047
VDS = 10 V, ID = 19.4 A
Ch-1
76
VDS = 10 V, ID = 20 A
Ch-2
120
Ch-1
1830
Ch-2
4900
Ch-1
300
Ch-2
710
Ch-1
120
Ch-2
280
VDS = 15 V, VGS = 10 V, ID = 19.4 A
Ch-1
29
45
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
73
110
Ch-1

S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
13.5
21
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 19.4 A
Ch-2
34
51
Ch-1
5.8
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Ch-2
15
Ch-1
3.1
Qgs
Qgd
Rg
pF
Ch-2
f = 1 MHz
nC
7.3
Ch-1
0.5
2.4
4.8
Ch-2
0.2
0.9
1.8

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
20
40
Ch-2
35
70
Ch-1
10
20
Ch-2
10
20
Ch-1
25
50
Ch-2
35
70
Ch-1
10
20
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Ch-2
10
20
Ch-1
15
30
Ch-2
15
30
Ch-1
10
20
Ch-2
7
15
Ch-1
30
60
Ch-2
40
80
Ch-1
10
20
Ch-2
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
Ch-1
24
Ch-2
28
Ch-1
90
Ch-2
110
IS = 10 A, VGS = 0 V
Ch-1
0.8
1.2
IS = 10 A, VGS = 0 V
Ch-2
0.8
1.2
Ch-1
16
30
Ch-2
30
60
Ch-1
6
12
Ch-2
21
40
trr
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
Ch-1
9
Ch-2
17
Ch-1
7
Ch-2
13
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
VGS = 3 V
20
12
TC = 25 °C
8
TC = 125 °C
4
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
2.5
3.0
25
30
2500
0.009
2000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0.008
VGS = 4.5 V
0.007
0.006
VGS = 10 V
Ciss
1500
1000
500
0.005
Coss
Crss
0.004
0
0
20
40
60
0
80
10
15
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
VDS = 7.5 V
ID = 18.8 A
8
RDS(on) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
5
ID - Drain Current (A)
6
VDS = 15 V
VDS = 24 V
4
2
0
0
6
12
18
24
Qg - Total Gate Charge (nC)
Gate Charge
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4
30
ID = 19.4 A
1.6
1.4
VGS = 10 V, 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.018
TJ = 150 °C
10
TJ = 25 °C
1
ID = 19.4 A
0.016
0.014
0.012
TJ = 125 °C
0.010
0.008
0.006
TJ = 25 °C
0.004
0.002
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
100
2.2
2.0
80
Power (W)
VGS(th) (V)
1.8
1.6
ID = 250 μA
1.4
60
40
1.2
20
1.0
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
TJ - Temperature (°C)
0.01
0.1
1
Time (s)
10
Threshold Voltage
Single Pulse Power
100
1000
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 μs
10
1 ms
10 ms
1
100 ms
1s
10 s
TC = 25 °C
Single Pulse
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
70
60
Power (W)
ID - Drain Current (A)
40
50
40
30
Package Limited
30
20
20
10
10
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.05
t1
t2
2. Per Unit Base = R thJA = 62 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
100
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
80
60
VGS = 3 V
40
12
TC = 25 °C
8
TC = 125 °C
20
4
0
0
TC = - 55 °C
0.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
0.0
2.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0050
6000
0.0045
5000
VGS = 4.5 V
0.0040
0.0035
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
3.5
VGS = 10 V
0.0030
0.0025
Ciss
4000
3000
2000
Coss
1000
Crss
0.0020
0
0
20
40
60
80
100
0
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.8
ID = 20 A
VDS = 7.5 V
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
30
6
VDS = 15 V
VDS = 24 V
4
2
0
0
20
40
60
Qg - Total Gate Charge (nC)
Gate Charge
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8
80
ID = 20 A
1.6
1.4
VGS = 10 V, 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.010
ID = 20 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.008
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.0
0.006
TJ = 125 °C
0.004
TJ = 25 °C
0.002
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
100
2.2
2.0
80
Power (W)
VGS(th) (V)
1.8
1.6
ID = 250 μA
1.4
60
40
1.2
20
1.0
0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
1 ms
10
10 ms
1
100 ms
1s
10 s
TA = 25 °C
Single Pulse
0.1
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
140
120
Power (W)
ID - Drain Current (A)
80
100
80
60
60
40
40
Package Limited
20
20
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ900DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 56 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
t1
t2
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67344.
Document Number: 67344
S11-2380-Rev. C, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 6 x 5 BW Case Outline
(for SiZ900DT only)
A
Pin 7
Pin 6
Pin 5
Pin 5
Pin 6
Pin 7
Pin 8
K
L
Pin 8
b
z
D
0.10 C
2X
E
E1
D1
K1
Pin #1 Ident
(Optional)
0.10 C
Pin 1
Pin 2
Pin 3
Pin 4
Pin 4
2X
Pin 3
E2
D1
Pin 2
Pin 1
e
TOP SIDE VIEW
BACK SIDE VIEW
0.08
C
A1
C
C
A
0.10
A3
b1
F
F
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.10
0.000
-
0.004
A3
0.20 REF
0.008 REF
b
0.51 BSC
0.020 BSC
b1
0.25 BSC
0.010 BSC
D
D1
5.00 BSC
3.75
E
3.80
0.197 BSC
3.85
0.148
6.00 BSC
E1
2.62
E2
0.87
e
0.150
0.152
0.236 BSC
2.67
2.72
0.103
0.92
0.97
0.034
1.27 BSC
0.105
0.107
0.036
0.038
0.005 BSC
K
0.45 TYP.
0.018 TYP.
K1
0.66 TYP.
0.026 TYP.
L
0.43 BSC
0.017 BSC
z
0.34 BSC
0.013 BSC
ECN: C11-1247-Rev. D, 31-Oct-11
DWG: 5978
Revision: 31-Oct-11
1
Document Number: 69027
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PAD for PowerPAIR® 6 x 5
0.28
(0.011)
0.53
(0.021)
2.835
(0.112)
0.45
(0.018)
2.12
(0.083)
2.67
(0.105)
4
(0.157)
(0, 0)
0.55
(0.022)
0.66
(0.026)
1.21
(0.048)
0.92
(0.036)
4
(0.157)
2.13
(0.084)
0.44
(0.017)
2.835
(0.112)
1.905
(0.075)
Pin 1
0.53
(0.021)
1.27
(0.050)
0.66
(0.026)
0.61
(0.024)
Dimensions in millimeters (inch)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 16-Feb-15
1
Document Number: 67480
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000