SUD50N04-8m8P Datasheet

SUD50N04-8m8P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0088 at VGS = 10 V
50
0.0105 at VGS = 4.5 V
50
VDS (V)
40
Qg (Typ.)
16 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• LCD Display Backlight Inverters
• DC/DC Converters
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Continuous Source-Drain Diode Current
40
± 20
V
14b
11.2b
100
40
A
2.6b
30
45
48.1
30.8
mJ
W
3.1b
2.0b
- 55 to 150
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
50a
44
IDM
Pulsed Drain Current
Limit
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Steady State
Symbol
RthJA
Typical
Maximum Junction-to-Ambientb
32
40
Maximum Junction-to-Case
Steady State
RthJC
2.1
2.6
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
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1
SUD50N04-8m8P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 1.0 mA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
Forward Transconductancea
gfs
mV/°C
- 5.9
1.5
3.0
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 70 °C
20
VDS ≥ 5 V, VGS = 10 V
RDS(on)
V
44
50
µA
A
VGS = 10 V, ID = 20 A
0.0069
0.0088
VGS = 4.5 V, ID = 15 A
0.0084
0.0105
VDS = 15 V, ID = 15 A
75
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2400
VDS = 20 V, VGS = 0 V, f = 1 MHz
260
pF
100
VDS = 20 V, VGS = 10 V, ID = 20 A
VDS = 20 V, VGS = 4.5 V, ID = 20 A
37
56
16
24
6.5
nC
4.5
f = 1 MHz
td(on)
VDD = 20 V, RL = 1 Ω
ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
2.5
5.5
8.5
30
45
15
25
45
70
tf
15
25
td(on)
9
15
VDD = 20 V, RL = 1 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
5
10
40
60
5
10
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
40
100
IS = 10 A
IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.81
1.2
V
22
35
ns
14
25
nC
11
11
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS = 10 V thru 5 V
VGS = 4 V
80
I D - Drain Current (A)
I D - Drain Current (A)
80
60
40
20
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
0.012
1.5
R DS(on) - On-Resistance (Ω)
1.2
I D - Drain Current (A)
40
20
VGS = 3 V
0
0.0
60
0.9
0.6
TC = 25 °C
0.010
VGS = 4.5 V
0.008
VGS = 10 V
0.006
0.3
TC = 125 °C
TC = - 55 °C
0.004
0.0
0
1
2
3
4
0
5
40
60
80
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
On-Resistance vs. Drain Current
100
10
3200
ID = 20 A
VGS - Gate-to-Source Voltage (V)
Ciss
2400
C - Capacitance (pF)
20
1600
800
Coss
Crss
0
0
VDS = 10 V
8
VDS = 20 V
6
VDS = 30 V
4
2
0
5
10
15
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
20
0
10
20
30
40
Qg - Total Gate Charge (nC)
Gate Charge
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SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.0
TJ = 25 °C
ID = 20 A
VGS = 10 V
10
1.4
VGS = 4.5 V
1.1
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
1.7
1
TJ = 150 °C
0.1
TJ = - 55 °C
0.8
0.01
0.5
- 50
- 25
0
25
50
75
100
125
0.001
0.0
150
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.6
0.030
0.025
0.2
VGS(th) Variance (V)
R DS(on) - On-Resistance (Ω)
ID = 7.2 A
0.020
0.015
TJ = 125 °C
- 0.2
ID = 1 mA
- 0.6
0.010
ID = 250 µA
TJ = 25 °C
0.005
0
2
4
6
8
- 1.0
- 50
10
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
500
1000
400
100
I D - Drain Current (A)
Power (W)
Limited by RDS(on)*
300
200
TA = 25 °C
0
0.0001
0.001
0.01
0.1
1
Time (s)
Single Pulse, Junction-to-Ambient
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4
100 µs
10
10
1 ms
10 ms,
100 ms, DC
1
0.1
100
10 µs
0.01
0.1
TC = 25 °C
Single Pulse
BVDSS
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
I D - Drain Current (A)
45
Package Limited
30
15
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
4.0
70
3.5
60
50
2.5
Power (W)
Power (W)
3.0
2.0
40
30
1.5
20
1.0
10
0.5
0.0
0
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Power Derating, Junction-to-Ambient
150
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
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SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68647.
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Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000