SUD50N04-10P Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT APPLICATIONS • LCD TV Inverter • Secondary Synchronous Rectification TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-10P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Limit Drain-Source Voltage Gate-Source Voltage VGS ± 16 TC = 100 °C TA = 25 °C 20a ID 12.6b 8.9b TA = 100 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 100 °C TA = 25 °C 20a IS 2.5b IAS 30 EAS mJ 45 53.5 26.7 PD W 3.2b 1.6b TA = 100 °C TJ, Tstg Operating Junction and Storage Temperature Range A 100 TC = 25 °C Maximum Power Dissipation V 20a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit 40 °C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 38 47 Maximum Junction-to-Case Steady State RthJC 2 2.8 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. Document Number: 74484 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 SUD50N04-10P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C -6 0.8 2.2 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 100 °C 20 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea V 38 gfs 30 µA A VGS = 10 V, ID = 15 A 0.0075 0.01 VGS = 4.5 V, ID = 10 A 0.009 0.012 VDS = 15 V, ID = 15 A 77 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3050 VDS = 20 V, VGS = 0 V, f = 1 MHz 330 pF 190 VDS = 20 V, VGS = 10 V, ID = 30 A VDS = 20 V, VGS = 4.5 V, ID = 30 A 64 100 30 45 7.7 nC 10.8 f = 1 MHz td(on) VDD = 20 V, RL = 0.66 Ω ID ≅ 30 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) 1.1 1.7 20 30 130 200 56 85 tf 35 53 td(on) 7 14 VDD = 20 V, RL = 0.66 Ω ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 18 30 28 45 8 16 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 50 IS = 10 A IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.81 1.2 V 22 35 ns 26 41 nC 17 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74484 S-81956-Rev. B, 25-Aug-08 SUD50N04-10P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 2.0 VGS = 10 thru 4 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 64 3V 48 32 16 1.2 25 °C 0.8 0.4 TC = 125 °C - 55 °C 0 0 1 2 3 4 0.0 0.0 5 1.4 2.1 2.8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 0.011 120 96 TC = - 55 °C 72 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 0.7 25 °C 125 °C 48 24 0 0.010 0.009 VGS = 4.5 V 0.008 0.007 VGS = 10 V 0.006 0 6 12 18 24 30 0 16 32 48 64 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 0.05 80 4500 0.04 3600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) ID = 15 A 0.03 0.02 125 °C 0.01 Ciss 2700 1800 900 Coss 25 °C 0.00 Crss 0 0 1 2 3 4 5 6 7 8 9 10 0 8 16 24 32 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance Document Number: 74484 S-81956-Rev. B, 25-Aug-08 40 www.vishay.com 3 SUD50N04-10P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 15 A VGS - Gate-to-Source Voltage (V) ID = 30 A 1.8 VDS = 20 V 6 VDS = 10 V VDS = 30 V 4 VGS = 4.5 V (Normalized) R DS(on) - On-Resistance 8 1.5 VGS = 10 V 1.2 0.9 2 0 0.0 13.2 26.4 39.6 52.8 0.6 - 50 66.0 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.5 100 TJ = 150 °C 0.2 TJ = 25 °C 1 VGS(th) (V) I S - Source Current (A) 10 0.1 ID = 5 mA - 0.4 ID = 250 µA 0.01 - 0.7 0.001 0.00 0.2 0.4 0.6 0.8 1.0 - 1.0 - 50 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 250 320 200 256 150 192 Power (W) Power (W) - 0.1 100 50 125 150 175 128 64 0 0 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient www.vishay.com 4 100 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Case Document Number: 74484 S-81956-Rev. B, 25-Aug-08 SUD50N04-10P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 Limited by RDS(on)* Limited by RDS(on)* 100 µs 10 1 ms 10 ms 100 ms 1 1s 10 s 0.1 I D - Drain Current (A) I D - Drain Current (A) 10 1 ms 10 ms 100 ms 1 s, DC 1 TC = 25 °C Single Pulse 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.01 0.1 * VGS 1 10 0.01 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified * VGS Safe Operating Area, Junction-to-Ambient 1 10 100 Safe Operating Area, Junction-to-Case 14 55 11 44 ID - Drain Current (A) I D - Drain Current (A) 0.1 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified 8 6 3 33 Package Limited 22 11 0 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Ambient 175 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74484 S-81956-Rev. B, 25-Aug-08 www.vishay.com 5 SUD50N04-10P Vishay Siliconix 4.0 65 3.2 52 2.4 39 Power (W) Power (W) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 26 13 0.8 0 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating*, Junction-to-Ambient 175 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Power Derating*, Junction-to-Case * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74484 S-81956-Rev. B, 25-Aug-08 New Product SUD50N04-10P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 2. Per Unit Base = RthJA = 47 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 10-3 10-2 4. Surface Mounted 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74484. Document Number: 74484 S-81956-Rev. B, 25-Aug-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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