SUD50N04-16P Vishay Siliconix N-Channel 40-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT APPLICATIONS • LCD TV Inverter • Secondary Synchronous Rectification TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-16P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C PD V 9.8b 6.8b 50 A 20c 2.5b 20 20 35.7 17.8 mJ W 3.1b 1.5b - 55 to 175 TJ, Tstg Operating Junction and Storage Temperature Range Unit 20c 20c IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 40 ± 16 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Steady State Symbol RthJA Typical 40 Maximum 50 Maximum Junction-to-Case Steady State RthJC 3.4 5.3 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Package limited. Document Number: 74477 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 SUD50N04-16P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C - 5.4 0.8 2.2 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 100 °C 20 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea V 38 gfs 30 µA A VGS = 10 V, ID = 15 A 0.0125 0.016 VGS = 4.5 V, ID = 10 A 0.014 0.018 VDS = 15 V, ID = 15 A 58 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1655 VDS = 20 V, VGS = 0 V, f = 1 MHz 200 pF 152 VDS = 20 V, VGS = 10 V, ID = 30 A 39.2 60 15.6 24 VDS = 20 V, VGS = 4.5 V, ID = 30 A 4.2 f = 1 MHz 2.1 3.2 19 30 120 180 40 60 nC 5.5 td(on) VDD = 20 V, RL = 0.66 Ω ID ≅ 30 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) tf 36 55 td(on) 8 16 VDD = 20 V, RL = 0.66 Ω ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 22 35 24 36 8 16 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 50 IS = 10 A IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.84 1.2 V 25 38 ns 22 33 nC 15 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74477 S-81956-Rev. B, 25-Aug-08 SUD50N04-16P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 80 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 64 48 3V 32 1.2 0.8 TC = 125 °C 0.4 25 °C 16 0 1 2 - 55 °C 0.0 0.0 0 3 0.6 Output Characteristics 2.4 3.0 Transfer Characteristics 0.020 120 RDS(on) - On-Resistance (Ω) TC = - 55 °C g fs - Transconductance (S) 1.8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 80 25 °C 40 125 °C 0.018 0.016 VGS = 4.5 V 0.014 0.012 VGS = 10 V 0.010 0 0 8 16 24 32 0 40 2000 0.03 125 °C 0.02 25 °C 0.01 1500 1000 Coss Crss 0 3 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 10 50 Ciss 500 0.00 Document Number: 74477 S-81956-Rev. B, 25-Aug-08 40 ID - Drain Current (A) 0.04 2 30 On-Resistance vs. Drain Current 2500 1 20 ID - Drain Current (A) 0.05 0 10 Transconductance C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.2 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUD50N04-16P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 15 A 1.8 8 R DS(on) - On-Resistance VDS = 20 V 6 VDS = 10 V VDS = 30 V 4 VGS = 4.5 V (Normalized) VGS - Gate-to-Source Voltage (V) ID = 30 A 1.5 VGS = 10 V 1.2 0.9 2 0 0 8 16 24 32 0.6 - 50 40 - 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Gate Charge 0.5 100 TJ = 150 °C 10 0.2 - 0.1 VGS(th) (V) 1 TJ = 25 °C 0.1 ID = 5 mA - 0.4 - 0.7 0.01 ID = 250 µA - 1.0 - 1.3 - 50 0.001 0.00 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) VSD - Source-to-Drain Voltage (V) Threshold Voltage Source-Drain Diode Forward Voltage 100 100 80 80 60 60 Power (W) Power (W) 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 0 40 40 20 20 0 0 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient www.vishay.com 4 100 0.001 0.01 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Case Document Number: 74477 S-81956-Rev. B, 25-Aug-08 SUD50N04-16P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 I D - Drain Current (A) 10 100 µs 1 ms 10 ms 100 ms 1 10 s 0.1 I D - Drain Current (A) Limited by RDS(on)* Limited by RDS(on)* 100 µs 10 1 ms 10 ms 100 ms 1s 1 TC = 25 °C Single Pulse 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 1 10 100 Safe Operating Area, Junction-to-Case 11 32 9 26 I D - Drain Current (A) I D - Drain Current (A) 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 7 4 2 Package Limited 19 13 6 0 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Ambient 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74477 S-81956-Rev. B, 25-Aug-08 www.vishay.com 5 SUD50N04-16P Vishay Siliconix 3.0 30 2.4 24 1.8 18 Power (W) Power (W) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.2 12 6 0.6 0 0.0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Power Derating*, Junction-to-Ambient 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating*, Junction-to-Case * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74477 S-81956-Rev. B, 25-Aug-08 SUD50N04-16P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 45 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74477. Document Number: 74477 S-81956-Rev. B, 25-Aug-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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