SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V (D-S) 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) 175 C) TC = 125C Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb ID L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 25C (TO-263)d Operating Junction and Storage Temperature Range V 85a 67a A 240 IAR 75 EAR 280 PD Unit 250c 3.7 mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA RthJC 62.5 C/W 0.6 Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71165 S-01884—Rev. B, 28-Aug-00 www.vishay.com 2-1 SUP/SUB85N08-08 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 75 VGS(th) VDS = VGS, ID = 250 mA 2.5 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C On-State Drain Currenta IDSS ID(on) V VDS = 60 V, VGS = 0 V, TJ = 125C 50 VDS = 60 V, VGS = 0 V, TJ = 175C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A a D i S Drain-Source On-State O S Resistance R i rDS(on) gfs VGS = 10 V, ID = 30 A, TJ = 125C VDS = 15 V, ID = 30 A mA A A 0.0063 0.008 0.014 VGS = 10 V, ID = 30 A, TJ = 175C Forward Transconductancea nA W 0.018 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 5800 VGS = 0 V, VDS = 25 V, f = 1 MHz pF F 900 285 100 VDS = 35 V, V VGS = 10 V V, ID = 85 A 150 nC C 35 Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 20 30 tr 115 175 50 75 80 120 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 25 VDD = 35 V V,, RL = 0 0.4 4W ID ^ 85 A, A VGEN = 10 V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current IS 85 Pulsed Current ISM 240 Forward Voltagea VSD A Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr IF = 85 A A, di/d di/dt = 100 A/ A/ms 1.0 1.5 V 70 120 ns 4 7 A 0.14 0.30 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 71165 S-01884—Rev. B, 28-Aug-00 SUP/SUB85N08-08 New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 7 V 6V 200 I D – Drain Current (A) I D – Drain Current (A) 200 150 100 5V 50 150 100 TC = 125C 50 25C –55C 4, 3 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.010 240 TC = –55C r DS(on) – On-Resistance ( ) g fs – Transconductance (S) 200 25C 160 125C 120 80 40 0 0.008 VGS = 10 V 0.006 0.004 0.002 0 0 20 40 60 80 0 100 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 20 8000 V GS – Gate-to-Source Voltage (V) 7000 Ciss 6000 C – Capacitance (pF) 60 5000 4000 3000 2000 Crss Coss 1000 0 VDS = 35 V ID = 85 A 16 12 8 4 0 0 15 30 45 60 VDS – Drain-to-Source Voltage (V) Document Number: 71165 S-01884—Rev. B, 28-Aug-00 75 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB85N08-08 New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150C 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 90 V(BR)DSS (V) IAV (A) @ TA = 25C I Dav (a) 1.2 95 100 10 IAV (A) @ TA = 150C ID = 250 mA 85 80 1 75 0.1 0.0001 0.001 0.01 tin (Sec) www.vishay.com 0.9 Drain Source Breakdown vs. Junction Temperature 1000 0.00001 0.6 VSD – Source-to-Drain Voltage (V) Avalanche Current vs. Time 2-4 TJ = 25C 10 0.1 1 70 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 71165 S-01884—Rev. B, 28-Aug-00 SUP/SUB85N08-08 New Product Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 100 10 ms 80 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 10 0 Limited by rDS(on) 1 ms 10 ms 100 ms dc 1 20 100 ms TC = 25C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71165 S-01884—Rev. B, 28-Aug-00 www.vishay.com 2-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1