SUP85N15-21 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET® Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Information: SUP85N15-21 SUP85N15-21-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID IDM Avalanche Current IAS 50 EAS 125 Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °Cd Operating Junction and Storage Temperature Range PD V 85 50 Pulsed Drain Current Single Pulse Avalanche Energyb Unit 180 300c 2.4 A mJ W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient-Free Air RthJA 62.5 Junction-to-Case (Drain) RthJC 0.4 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72003 S-71662-Rev. B, 06-Aug-07 www.vishay.com 1 SUP85N15-21 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 125 °C 50 VDS = 120 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea Forward Transconductancea 4 rDS(on) gfs nA µA A 0.0175 0.021 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.042 VGS = 10 V, ID = 30 A, TJ = 175 °C 0.055 VDS = 15 V, ID = 30 A V 25 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 4750 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 530 220 76 VDS = 75 V, VGS = 10 V, ID = 85 A 110 nC 21 Gate-Drain Charge Qgd 26 Turn-On Delay Timec td(on) 22 35 170 250 40 60 170 250 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDD = 75 V, RL = 0.9 Ω ID ≅ 85 A, VGEN = 10 V, RG = 2.5 Ω tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 85 Pulsed Current ISM 180 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/µs A 1.0 1.5 V 130 200 ns 8 12 A 0.52 1.2 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72003 S-71662-Rev. B, 06-Aug-07 SUP85N15-21 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 180 180 VGS = 10 thru 7 V 150 150 I D - Drain Current (A) I D - Drain Current (A) 6V 120 90 60 5V 30 120 90 60 TC = 125 °C 30 25 °C - 55 °C 4V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 180 0.04 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 150 25 °C 120 125 °C 90 60 30 0 VGS = 10 V 0.02 0.01 0.00 0 20 40 60 80 100 120 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 7000 V GS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 0.03 5000 4000 3000 2000 Crss 1000 Coss VDS = 75 V ID = 85 A 16 12 8 4 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72003 S-71662-Rev. B, 06-Aug-07 150 www.vishay.com 3 SUP85N15-21 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.8 100 VGS = 10 V ID = 30 A I S - Source Current (A) r DS(on) - On-Resistance (Normalized) 2.4 2.0 1.6 1.2 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 1000 190 180 V(BR)DSS (V) 100 I Dav (A) 0.6 IAV (A) at TA = 25 °C 10 ID = 1.0 mA 170 160 1 150 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (Sec) Avalanche Current vs. Time www.vishay.com 4 1 140 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 72003 S-71662-Rev. B, 06-Aug-07 SUP85N15-21 Vishay Siliconix THERMAL RATINGS 1000 90 Limited by rDS(on) 75 10 µs I D - Drain Current (A) I D - Drain Current (A) 100 60 45 30 100 µs 10 1 ms 10 ms, 100 ms DC 1 15 0 TC = 25 °C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (°C) Safe Operating Area Maximum Avalanche and Drain Current vs. Case Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72003. Document Number: 72003 S-71662-Rev. B, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1