IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Datasheet

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully
Characterized
Capacitance
and
Avalanche Voltage and Current
• Effective Coss Specified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
500
RDS(on) ()
VGS = 10 V
3.0
Qg (Max.) (nC)
17
Qgs (nC)
4.3
Qgd (nC)
8.5
Configuration
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
D
D
G
G
S
G
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free and Halogen-free
SiHFR420A-GE3
SiHFR420ATR-GE3a
SiHFR420ATRL-GE3
SiHFU420A-GE3
IRFR420APbF
IRFR420ATRPbFa
IRFR420ATRLPbF
IRFU420APbF
SiHFR420A-E3
SiHFR420AT-E3a
SiHFR420ATL-E3
SiHFU420A-E3
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
3.3
2.1
A
10
0.67
W/°C
Single Pulse Avalanche Energyb
EAS
140
mJ
Repetitive Avalanche Currenta
IAR
2.5
A
Repetitive Avalanche Energya
EAR
5.0
mJ
PD
83
W
dV/dt
3.4
V/ns
TJ, Tstg
- 55 to + 150
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
300d
°C
Notes
a.
b.
c.
d.
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
Starting TJ = 25 °C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).
ISD  2.5 A, dI/dt  270 A/μs, VDD  VDS, TJ  150 °C.
1.6 mm from case.
S13-0165-Rev. C, 04-Feb-13
Document Number: 91274
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.60
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.5
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
± 100
VDS = 500 V, VGS = 0 V
-
-
25
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
-
-
3.0

1.4
-
-
S
-
340
-
-
53
-
-
2.7
-
VDS = 1.0 V, f = 1.0 MHz
-
490
-
VDS = 400 V, f = 1.0 MHz
-
15
-
-
28
-
-
-
17
ID = 1.5 Ab
VGS = 10 V
VDS = 50 V, ID = 1.5 A
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
Coss eff.
VDS = 0 V to 400
Vc
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
4.3
Gate-Drain Charge
Qgd
-
-
8.5
Turn-On Delay Time
td(on)
-
8.1
-
tr
-
12
-
-
16
-
-
13
-
-
-
3.3
-
-
10
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VGS = 10 V
ID = 2.5 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 2.5 A,
Rg = 21 , RD = 97 , see fig. 10b
tf
pF
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 2.5 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb
-
-
1.6
V
-
330
500
ns
-
760
1140
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 %to 80 % VDS.
S13-0165-Rev. C, 04-Feb-13
Document Number: 91274
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
0.1
4.5V
20μs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.01
4.0
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
1
4.5V
20μs PULSE WIDTH
TJ = 150 ° C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
S13-0165-Rev. C, 04-Feb-13
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
6.0
7.0
8.0
9.0
Fig. 3 - Typical Transfer Characteristics
TOP
0.1
5.0
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
V DS = 50V
20μs PULSE WIDTH
ID = 2.5A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91274
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
1000
Ciss
100
Coss
10
10
ISD , Reverse Drain Current (A)
10000
Vishay Siliconix
TJ = 150 ° C
1
TJ = 25 ° C
Crss
0.1
0.4
1
1
10
100
1000
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
ID = 2.5A
VDS = 400V
VDS = 250V
VDS = 100V
OPERATION IN THIS AREA LIMITED
BY RDS(on)
15
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
20
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10us
100us
1
1ms
5
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
10ms
100
1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0165-Rev. C, 04-Feb-13
10000
Document Number: 91274
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
RD
VDS
5.0
VGS
D.U.T.
Rg
+
- VDD
4.0
ID , Drain Current (A)
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
2.0
Fig. 10a - Switching Time Test Circuit
1.0
90 %
VDS
0.0
25
50
75
100
125
150
10 %
VGS
( ° C)
TC , Case Temperature
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response
(Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.1
0.05
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
tp
15 V
L
VDS
D.U.T
Rg
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
S13-0165-Rev. C, 04-Feb-13
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91274
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
Vishay Siliconix
300
TOP
250
BOTTOM
ID
1.1A
1.6A
2.5A
200
150
100
700
V DSav , Avalanche Voltage ( V )
EAS , Single Pulse Avalanche Energy (mJ)
www.vishay.com
650
600
50
550
0.0
0
25
50
75
100
125
0.5
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1.0
1.5
2.0
2.5
IAV , Avalanche Current ( A)
Fig. 12d - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
QG
50 kΩ
12 V
10 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S13-0165-Rev. C, 04-Feb-13
Fig. 13b - Gate Charge Test Circuit
Document Number: 91274
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR420A, IRFU420A, SiHFR420A, SiHFU420A
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91274.
S13-0165-Rev. C, 04-Feb-13
Document Number: 91274
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4
3
E1
E
Thermal PAD
4
b4
θ2
4
A
0.010 0.25 M C A B
L2 4
c2
A
θ1
B
D
D1
A
C
3
Seating
plane
5
C
L1 L3
(Datum A)
C
L
B
B
A
A1
3 x b2
View A - A
2xe
c
3xb
0.010 0.25 M C A B
Plating
5
b1, b3
Base
metal
Lead tip
c1
(c)
5
(b, b2)
Section B - B and C - C
MILLIMETERS
DIM.
MIN.
MAX.
INCHES
MIN.
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
D1
5.21
-
0.205
-
A1
0.89
1.14
0.035
0.045
E
6.35
6.73
0.250
0.265
4.32
-
0.170
-
b
0.64
0.89
0.025
0.035
E1
b1
0.65
0.79
0.026
0.031
e
b2
0.76
1.14
0.030
0.045
L
8.89
9.65
0.350
0.380
b3
0.76
1.04
0.030
0.041
L1
1.91
2.29
0.075
0.090
b4
4.95
5.46
0.195
0.215
L2
0.89
1.27
0.035
0.050
2.29 BSC
2.29 BSC
c
0.46
0.61
0.018
0.024
L3
1.14
1.52
0.045
0.060
c1
0.41
0.56
0.016
0.022
θ1
0'
15'
0'
15'
c2
0.46
0.86
0.018
0.034
θ2
25'
35'
25'
35'
D
5.97
6.22
0.235
0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000