IRFBC30A, SiHFBC30A Datasheet

IRFBC30A, SiHFBC30A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
600
RDS(on) (Ω)
VGS = 10 V
2.2
Qg (Max.) (nC)
23
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
COMPLIANT
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Single
• Effective Coss Specified
D
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
G
• High Speed Power Switching
D
G
S
TYPICAL SMPS TOPOLOGY
S
• Single Transistor Flyback
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFBC30APbF
SiHFBC30A-E3
IRFBC30A
SiHFBC30A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
3.6
2.3
A
14
0.69
W/°C
Single Pulse Avalanche Energyb
EAS
290
mJ
Repetitive Avalanche Currenta
IAR
3.6
A
Repetitive Avalanche Energya
EAR
7.4
mJ
PD
74
W
dV/dt
7.0
V/ns
TJ, Tstg
- 55 to + 150
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12).
c. ISD ≤ 3.6 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.67
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.5
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
± 100
VDS = 600 V, VGS = 0 V
-
-
25
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
ID = 2.2 Ab
VGS = 10 V
VDS = 50 V, ID = 2.2 Ab
μA
-
-
2.2
Ω
2.1
-
-
S
-
510
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Coss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
Coss eff.
-
70
-
-
3.5
-
VDS = 1.0 V, f = 1.0 MHz
-
730
-
VDS = 480 V, f = 1.0 MHz
-
19
-
-
31
-
-
-
23
-
-
5.4
VDS = 0 V to 480
Vc
Qg
VGS = 10 V
ID = 3.6 A, VDS = 480 V
see fig. 6 and 13b
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
11
Turn-On Delay Time
td(on)
-
9.8
-
tr
-
13
-
-
19
-
-
12
-
-
-
3.6
-
-
14
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
VDD = 300 V, ID = 3.6 A,
Rg = 12 Ω, RD = 82 Ω, see fig. 10b
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 3.6 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb
-
-
1.6
V
-
400
600
ns
-
1.1
1.7
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
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Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
0.1
4.5V
20μs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.01
4.0
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
1
4.5V
20µs PULSE WIDTH
TJ = 150 ° C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
6.0
7.0
8.0
9.0
Fig. 3 - Typical Transfer Characteristics
TOP
0.1
0.1
5.0
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
V DS = 50V
20μs PULSE WIDTH
ID = 3.6A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
1000
Ciss
100
Coss
10
Crss
100
ISD , Reverse Drain Current (A)
10000
10
TJ = 150° C
TJ = 25 ° C
1
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V GS = 0 V
0.6
0.8
Fig. 7 - Typical Source-Drain Diode Forward Voltage
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 480V
VDS = 300V
VDS = 120V
16
12
8
10us
10
100us
1
1ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
20
24
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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1.2
100
ID = 3.6A
0
1.0
VSD ,Source-to-Drain Voltage (V)
ID , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
20
0.1
0.4
1000
0.1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
RD
VDS
4.0
VGS
D.U.T.
ID , Drain Current (A)
RG
+
- VDD
3.0
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2.0
Fig. 10a - Switching Time Test Circuit
VDS
1.0
90 %
0.0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature ( ° C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
L
VDS
D.U.T
RG
IAS
20 V
tp
tp
Driver
+
A
- VDD
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
IAS
Fig. 12b - Unclamped Inductive Waveforms
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
EAS , Single Pulse Avalanche Energy (mJ)
Vishay Siliconix
700
ID
1.6A
2.3A
3.6A
TOP
600
BOTTOM
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
QG
10 V
V DSav , Avalanche Voltage ( V )
740
QGS
QGD
VG
720
Charge
700
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
680
660
50 kΩ
12 V
0.2 µF
0.3 µF
+
640
0.0
1.0
2.0
3.0
D.U.T.
4.0
IAV , Avalanche Current ( A)
-
VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30A, SiHFBC30A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91108.
Document Number: 91108
S11-0515-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000