IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Single • Effective Coss Specified D • Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching D G S TYPICAL SMPS TOPOLOGY S • Single Transistor Flyback N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBC30APbF SiHFBC30A-E3 IRFBC30A SiHFBC30A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V 3.6 2.3 A 14 0.69 W/°C Single Pulse Avalanche Energyb EAS 290 mJ Repetitive Avalanche Currenta IAR 3.6 A Repetitive Avalanche Energya EAR 7.4 mJ PD 74 W dV/dt 7.0 V/ns TJ, Tstg - 55 to + 150 Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12). c. ISD ≤ 3.6 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A, SiHFBC30A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.67 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 ID = 2.2 Ab VGS = 10 V VDS = 50 V, ID = 2.2 Ab μA - - 2.2 Ω 2.1 - - S - 510 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Total Gate Charge Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V Coss eff. - 70 - - 3.5 - VDS = 1.0 V, f = 1.0 MHz - 730 - VDS = 480 V, f = 1.0 MHz - 19 - - 31 - - - 23 - - 5.4 VDS = 0 V to 480 Vc Qg VGS = 10 V ID = 3.6 A, VDS = 480 V see fig. 6 and 13b Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 9.8 - tr - 13 - - 19 - - 12 - - - 3.6 - - 14 Rise Time Turn-Off Delay Time Fall Time td(off) VDD = 300 V, ID = 3.6 A, Rg = 12 Ω, RD = 82 Ω, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 3.6 A, VGS = 0 S Vb TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb - - 1.6 V - 400 600 ns - 1.1 1.7 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A, SiHFBC30A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 0.1 4.5V 20μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.01 4.0 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 1 4.5V 20µs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 0.1 5.0 VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 10 V DS = 50V 20μs PULSE WIDTH ID = 3.6A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A, SiHFBC30A Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 1000 Ciss 100 Coss 10 Crss 100 ISD , Reverse Drain Current (A) 10000 10 TJ = 150° C TJ = 25 ° C 1 1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V 0.6 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 480V VDS = 300V VDS = 120V 16 12 8 10us 10 100us 1 1ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 4 8 12 16 20 24 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.2 100 ID = 3.6A 0 1.0 VSD ,Source-to-Drain Voltage (V) ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 0.1 0.4 1000 0.1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A, SiHFBC30A Vishay Siliconix RD VDS 4.0 VGS D.U.T. ID , Drain Current (A) RG + - VDD 3.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 Fig. 10a - Switching Time Test Circuit VDS 1.0 90 % 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V L VDS D.U.T RG IAS 20 V tp tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A, SiHFBC30A EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 700 ID 1.6A 2.3A 3.6A TOP 600 BOTTOM 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current QG 10 V V DSav , Avalanche Voltage ( V ) 740 QGS QGD VG 720 Charge 700 Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 680 660 50 kΩ 12 V 0.2 µF 0.3 µF + 640 0.0 1.0 2.0 3.0 D.U.T. 4.0 IAV , Avalanche Current ( A) - VDS VGS 3 mA IG ID Current sampling resistors Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC30A, SiHFBC30A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91108. Document Number: 91108 S11-0515-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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