IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC 400 RDS(on) () VGS = 10 V 0.55 Qg (Max.) (nC) 36 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G G D • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES S • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740APbF SiHF740A-E3 IRF740A SiHF740A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 400 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb UNIT V 10 6.3 A 40 1.0 W/°C mJ EAS 630 Repetitive Avalanche Currenta IAR 10 A Repetitive Avalanche Energya EAR 12.5 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 125 W dV/dt 5.9 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12). c. ISD 10 A, dV/dt 330 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A, SiHF740A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 μA 400 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.48 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 6.0 Ab VGS = 10 V VDS = 50 V, ID = 6.0 Ab μA - - 0.55 4.9 - - S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Coss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1030 - - 170 - - 7.7 - VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz - 1490 - VGS = 0 V, VDS = 320 V, f = 1.0 MHz - 52 - VGS = 0 V, VDS = 0 V to 320 V - 61 - VGS = 10 V ID = 10 A, VDS = 320 V, see fig. 6 and 13b - - 36 - - 9.9 pF nC Gate-Drain Charge Qgd - - 16 Turn-On Delay Time td(on) - 10 - - 35 - - 24 - - 22 - - - 10 - - 40 - - 2.0 - 240 360 ns - 1.9 2.9 μC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 200 V, ID = 10 A, Rg = 10 , RD = 19.5, see fig. 10b tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 10 A, VGS = 0 Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A, SiHF740A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) Top 10 1 4.5 V 0.1 20 µs Pulse Width TJ = 25 °C 10-2 0.1 1 10 TJ = 150 °C 1 TJ = 25 °C 0.1 4.0 102 10 VDS, Drain-to-Source Voltage (V) 91051_01 ID, Drain-to-Source Current (A) 102 ID, Drain-to-Source Current (A) 10 4.5 V 1 20 µs Pulse Width TJ = 150 °C 0.1 0.1 91051_02 1 10 Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 3.0 2.5 7.0 8.0 9.0 10.0 ID = 10 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 102 VDS, Drain-to-Source Voltage (V) 6.0 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 5.0 VGS, Gate-to-Source Voltage (V) 91051_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C 102 20 µs Pulse Width VDS = 50 V 91051_04 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A, SiHF740A Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 104 Ciss 103 Coss 102 Crss 10 102 ISD, Reverse Drain Current (A) C, Capacitance (pF) 105 10 TJ = 150 °C 1 VGS = 0 V 0.1 1 102 10 1 0.2 103 VDS, Drain-to-Source Voltage (V) 91051_05 20 102 ID, Drain Current (A) VDS = 80 V 12 8 For test circuit see figure 13 0 91051_06 10 20 30 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.2 1.4 100 µs 10 1 ms TC = 25 °C TJ = 150 °C Single Pulse 1 10 40 QG, Total Gate Charge (nC) 1.0 10 µs 4 0 0.8 Operation in this area limited by RDS(on) VDS = 320 V VDS = 200 V 0.6 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 10 A 16 0.4 VSD, Source-to-Drain Voltage (V) 91051_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) TJ = 25 °C 91051_08 10 ms 102 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A, SiHF740A Vishay Siliconix RD VDS VGS 10.0 + - VDD 10 V 8.0 ID, Drain Current (A) D.U.T. Rg Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6.0 Fig. 10a - Switching Time Test Circuit 4.0 VDS 2.0 90 % 0.0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (°C) 91051_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 PDM t1 Single Pulse (Thermal Response) 10-2 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-3 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) 91051_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T. Rg IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A, SiHF740A 1400 ID 4.5 A 6.3 A Bottom 10 A Top 1200 1000 800 600 400 200 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) 91051_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current 580 VDSav, Avalanche Voltage (V) EAS, Single Pulse Avalanche Energy (mJ) Vishay Siliconix 560 540 520 500 480 1.0 2.0 3.0 4.0 5.0 6.0 8.0 7.0 9.0 10.0 IAV, Avalanche Current (A) 91051_12d Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740A, SiHF740A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91051. Document Number: 91051 S11-0508-Rev. C, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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