IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low gate charge Qg results in simple drive Requirement 600 RDS(on) () VGS = 10 V 1.2 Qg max. (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved gate, avalanche and dynamic dV/dt ruggedness • Effective Coss specified D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AB Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G D Available • Fully characterized capacitance and avalanche voltage and current Single G Available S APPLICATIONS S • Switch mode power supply (SMPS) N-Channel MOSFET • Uninterruptible power supply • High speed power switching TYPICAL SMPS TOPOLOGIES • Single transistor forward ORDERING INFORMATION Package TO-220AB IRFBC40APbF Lead (Pb)-free SiHFBC40A-E3 IRFBC40A SnPb SiHFBC40A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 VGS at 10 V Continuous Drain Current Pulsed Drain TC = 25 °C TC = 100 °C Current a ID IDM Linear Derating Factor UNIT V 6.2 3.9 A 25 1.0 W/°C mJ Single Pulse Avalanche Energy b EAS 570 Repetitive Avalanche Current a IAR 6.2 A Repetitive Avalanche Energy a EAR 13 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) Mounting Torque d for 10 s 6-32 or M3 screw PD 125 W dV/dt 6.0 V/ns TJ, Tstg -55 to +150 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12). c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91112 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.66 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance μA - - 1.2 gfs VDS = 50 V, ID = 3.7 A 3.4 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1036 - - 136 - - 7.0 - - 1487 - RDS(on) ID = 3.7 A b VGS = 10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-Off Delay Time VGS = 0 V Coss eff. Total Gate Charge Rise Time VDS = 1.0 V, f = 1.0 MHz tr td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V VDS = 480 V, f = 1.0 MHz - 36 - VDS = 0 V to 480 V c - 48 - - - 42 - - 10 - - 20 - ID = 6.2 A, VDS = 480 V see fig. 6 and 13 b 13 - VDD = 300 V, ID = 6.2 A Rg = 9.1 , RD = 47 see fig. 10 b - 23 - - 31 - - 18 - f = 1 MHz, open drain 0.6 - 3.9 - - 6.2 - - 25 pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 6.2 A, VGS = 0 S Vb TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs b - - 1.5 V - 431 647 ns - 1.8 2.8 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. S16-0763-Rev. D, 02-May-16 Document Number: 91112 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain-to-Source Current (A) Top 10 Bottom 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V ID, Drain-to-Source Current (A) 100 1 4.5 V 0.1 20 µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 TJ = 150 °C 10 TJ = 25 °C 1 VDS = 50 V 20 µs PULSE WIDTH 0.1 100 4.0 5.0 VDS, Drain-to-Source Voltage (V) 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) Top 10 4.5 V 1 20 µs PULSE WIDTH TJ = 150 °C 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics S16-0763-Rev. D, 02-May-16 10.0 Fig. 3 - Typical Transfer Characteristics 100 RDS(on), Drain-to-Source On Resistance (Normalized) Fig. 1 - Typical Output Characteristics 9.0 8.0 7.0 6.0 VGS, Gate-to-Source Voltage (V) 3.0 ID = 6.2 A 2.5 2.0 1.5 1.0 0.5 VGS = 10 V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91112 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40A, SiHFBC40A www.vishay.com 100 VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd 10000 1000 Ciss 100 Coss 10 f = 1 MHz SHORTED ISD, Reverse Drain Current (A) 100000 C, Capacitance (pF) Vishay Siliconix TJ = 25 °C 1 Crss 1 1 0.1 0.4 1000 100 10 VDS, Drain-to-Source Voltage (V) VGS = 0 V 1.0 0.8 0.6 VSD, Source-to-Drain Voltage (V) 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 100 20 ID = 6.2 A OPERATING IN THIS AREA LIMITED BY RDS(on) VDS = 480 V VDS = 300 V VDS = 120 V 16 10 µs ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) TJ = 150 °C 10 12 8 10 100 µs 1 ms 1 10 ms 4 TC = 25 °C TJ = 150 °C Single Pulse For Test Circuit See Fig. 13 0 0 8 32 16 24 QG, Total Gate Charge (nC) 0.1 40 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0763-Rev. D, 02-May-16 10 100 1000 10000 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91112 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix RD VDS 7.0 VGS 6.0 D.U.T. RG + - VDD ID, Drain Current (A) 5.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4.0 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 90 % 1.0 0 50 25 75 100 150 125 10 % VGS TC, Case Temperature (°C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 0.20 0.1 PDM 0.10 t1 0.05 0.02 0.01 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0763-Rev. D, 02-May-16 Document Number: 91112 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix 820 Driver L VDS D.U.T RG + A - VDD IAS 20 V tp VDSav, Avalanche Voltage (V) 15 V 0.01 Ω 800 780 760 740 Fig. 12a - Unclamped Inductive Test Circuit 720 0 VDS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IAV, Avalanche Current (A) tp Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current IAS QG 10 V Fig. 12b - Unclamped Inductive Waveforms QGS 1400 EAS, Single Pulse Avalanche Energy (mJ) TOP 1200 BOTTOM ID 2.8 A 3.9 A 6.2 A QGD VG 1000 Charge 800 Fig. 13a - Basic Gate Charge Waveform 600 Current regulator Same type as D.U.T. 400 200 50 kΩ 12 V 0.2 µF 0.3 µF 0 25 50 75 100 125 + 150 D.U.T. Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current - VDS VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit S16-0763-Rev. D, 02-May-16 Document Number: 91112 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91112. S16-0763-Rev. D, 02-May-16 Document Number: 91112 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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