IRFB9N60A, SiHFB9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low gate charge Qg results in simple drive requirement 600 RDS(on) () VGS = 10 V Qg max. (nC) 0.75 • Improved gate, avalanche and dynamic dV/dt ruggedness 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available Available • Fully characterized capacitance and avalanche voltage and current Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D TO-220AB APPLICATIONS • Switch mode power supply (SMPS) G • Uninterruptible power supply • High speed power switching D G S APPLICABLE OFF LINE SMPS TOPOLOGIES S • Active clamped forward N-Channel MOSFET • Main switch ORDERING INFORMATION Package TO-220AB IRFB9N60APbF Lead (Pb)-free SiHFB9N60A-E3 IRFB9N60A SnPb SiHFB9N60A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 9.2 5.8 A IDM 37 1.3 W/°C Single Pulse Avalanche Energy b EAS 290 mJ Repetitive Avalanche Current a IAR 9.2 A EAR 17 mJ PD 170 W dV/dt 5.0 V/ns TJ, Tstg -55 to +150 Linear Derating Factor Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d Mounting Torque for 10 s 6-32 or M3 screw 300 °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 6.8 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD 9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91103 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A, SiHFB9N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 0.75 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 660 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 5.5 A b VGS = 10 V gfs VDS = 50 V, ID = 5.5 A μA - - 0.75 5.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, - 1400 - Output Capacitance Coss VDS = 25 V, - 180 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 7.1 - Output Capacitance Coss VDS = 1.0 V, f = 1.0 MHz - 1957 - VDS = 480 V, f = 1.0 MHz - 49 - VDS = 0 V to 480 V - 96 - - - 49 - - 13 - - 20 - 13 - - 25 - - 30 - Effective Output Capacitance Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time VGS = 0 V Coss eff. tr td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 9.2 A, VDS = 400 V see fig. 6 and 13 b VDD = 300 V, ID = 9.2 A Rg = 9.1 , RD = 35.5 , see fig. 10 b f = 1 MHz, open drain - 22 - 0.5 - 3.2 - - 9.2 - - 37 pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 9.2 A, VGS = 0 S Vb TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b - - 1.5 V - 530 800 ns - 3.0 4.4 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss effective is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. S16-0763-Rev. D, 02-May-16 Document Number: 91103 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A, SiHFB9N60A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 TJ = 25 ° C 1 0.1 4.0 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 10 4.7V 20µs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics S16-0763-Rev. D, 02-May-16 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 1 5.0 6.0 7.0 8.0 9.0 10.0 Fig. 3 - Typical Transfer Characteristics TOP 1 V DS = 50V 20µs PULSE WIDTH VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 TJ = 150 ° C ID = 9.2A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91103 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A, SiHFB9N60A www.vishay.com 10000 V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd 1000 Ciss 100 ISD , Reverse Drain Current (A) C, Capacitance (pF) 100000 Vishay Siliconix Coss 100 10 Crss 1 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.2 A 1 10 100 1000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1.0 1.2 Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID = 9.2A OPERATION IN THIS AREA LIMITED BY RDS(on) 400V VDS = 480V VDS = 300V VDS = 120V 16 100 ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 0.7 VSD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) 20 V GS = 0 V 0.5 12 8 10us 10 100us 1ms 1 10ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 50 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area S16-0763-Rev. D, 02-May-16 10000 Document Number: 91103 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A, SiHFB9N60A www.vishay.com Vishay Siliconix RD VDS 10.0 VGS D.U.T. RG + ID , Drain Current (A) 8.0 - VDD 10V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6.0 Fig. 10a - Switching Time Test Circuit 4.0 VDS 90 % 2.0 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) t d(on) tr t d(off) t f Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0763-Rev. D, 02-May-16 Document Number: 91103 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A, SiHFB9N60A www.vishay.com Vishay Siliconix V DS tp 15 V Driver L VDS D.U.T. RG + V - DD IAS 20 V tp A 0.01 W I AS Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit 600 ID 4.1A 5.8A 9.2A TOP 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 kΩ 12 V 10 V 0.2 µF 0.3 µF QGS Q GD + D.U.T. VG - VDS VGS 3 mA Charge Fig. 13a - Basic Gate Charge Waveform S16-0763-Rev. D, 02-May-16 IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91103 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB9N60A, SiHFB9N60A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91103. S16-0763-Rev. D, 02-May-16 Document Number: 91103 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000