AON7900 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON7900 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3.3x3.3 package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON7900 is well suited for use in compact DC/DC converter applications. DFN3.3X3.3A Top View Q1 30V Q2 30V RDS(ON) (at VGS=10V) 24A <21mΩ <6.7mΩ RDS(ON) (at VGS = 4.5V) <28mΩ <8.5mΩ VDS ID (at VGS=10V) 100% UIS Tested 100% Rg Tested Bottom View Top View Bottom View 40A G2 PIN1 S2 8 1 7 2 D2/S1 S2 PIN1 S2 PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Continuous Drain Current IDM TA=25°C 5 4 Max Q2 D1 D1 D1 Units V V 40 15 31 90 150 8 13 6 10 IDSM TA=70°C 3 30 ±20 24 ID TC=100°C 6 G1 A A Avalanche Current C IAS, IAR 22 28 A Avalanche Energy L=0.1mH C EAS, EAR 24 39 mJ TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: Sep 2010 t ≤ 10s Steady-State Steady-State RθJA RθJC 17 50 7 20 1.8 1.8 1.1 1.1 -55 to 150 Typ Q1 27 60 6 www.aosmd.com Typ Q2 27 60 2 Max Q1 Max Q2 35 35 72 72 7.5 2.5 W W °C Units °C/W °C/W °C/W Page 1 of 10 AON7900 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V Typ V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 On state drain current VGS=10V, VDS=5V 90 TJ=55°C VDS=0V, VGS= ±20V TJ=125°C 100 nA 1.8 2.3 V 17 21 24 29 28 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=4A 22 gFS Forward Transconductance VDS=5V, ID=8A 33 VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8A µA 5 VGS=10V, ID=8A Coss Units 30 IDSS IS Max mΩ mΩ S V 20 A 470 590 710 pF 250 360 450 pF 13 23 40 pF 0.7 1.5 2.3 Ω 7 9 11 nC 4 5 nC 3 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 1.6 nC 1.5 nC 6 ns 3 ns 18 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 8 11 14 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 15 19 23 3 ns ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 www.aosmd.com Page 2 of 10 AON7900 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 10V VDS=5V 7V 25 4.5V 60 40 ID(A) ID (A) 20 3.5V 15 10 125°C 20 25°C 5 VGS=2.5V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 25 Normalized On-Resistance 30 RDS(ON) (mΩ) 0.5 VGS=4.5V 20 15 VGS=10V 10 0 3 6 9 12 VGS=10V ID=8A 1.6 1.4 17 VGS=4.5V 5 ID=4A 2 1.2 10 1 0.8 15 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+02 ID=8A 35 1.0E+01 125°C 1.0E-01 25 IS (A) RDS(ON) (mΩ) 40 1.0E+00 30 125°C 20 1.0E-03 15 1.0E-04 25°C 10 2 4 6 1.0E-05 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2010 25°C 1.0E-02 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON7900 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 Capacitance (pF) VGS (Volts) 8 6 4 800 600 200 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 160 100.0 RDS(ON) limited 10.0 100us 1ms 1.0 DC 120 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) 80 40 10 0 0.0001 100 1 0.01 0.1 1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W 0.1 PD Ton Single Pulse 0.01 0.00001 0.001 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) Coss 400 2 ZθJC Normalized Transient Thermal Resistance Ciss 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2010 www.aosmd.com Page 4 of 10 AON7900 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 20 TA=25°C TA=100°C TA=125°C TA=150°C 15 10 5 0 10 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 30 TA=25°C 25 1000 20 Power (W) Current rating ID(A) 25 15 10 17 5 2 10 100 10 5 0 0 25 50 75 100 125 1 0.00001 150 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=72°C/W 0.1 0.01 PD Single Pulse 0.001 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep 2010 www.aosmd.com Page 5 of 10 AON7900 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 On state drain current VGS=10V, VDS=5V 150 VDS=0V, VGS= ±20V 100 9 VGS=4.5V, ID=10A 6.7 8.5 VDS=5V, ID=13A 50 Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=13A V A 7.5 TJ=125°C nA 2.3 6.7 gFS Crss 1.8 5.5 Static Drain-Source On-Resistance µA 5 VGS=10V, ID=13A Output Capacitance V TJ=55°C RDS(ON) Units 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ mΩ mΩ S 0.7 V 40 A 1400 1770 2130 pF 580 830 1080 pF 43 72 120 pF 0.7 1.4 2.1 Ω 21 27 33 nC 9 12 15 nC VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 4 nC 5 nC 7 ns 3 ns 27 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs 13 17 21 Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 27 34 41 6 ns ns nC 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 www.aosmd.com Page 6 of 10 AON7900 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V VDS=5V 25 4.5V 80 ID(A) ID (A) 20 3.5V 60 40 15 125°C 20 5 VGS=2.5V 0 0 0 1 2 3 4 0 5 1 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ) 25°C 10 VGS=4.5V 6 VGS=10V 4 VGS=10V ID=13A 1.6 1.4 17 5 2 10 VGS=4.5V ID=10A 1.2 1 0.8 2 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 14 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=13A 12 1.0E+01 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 40 10 8 25°C 1.0E-01 6 1.0E-02 25°C 4 1.0E-03 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON7900 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=13A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 500 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs RDS(ON) limited 100µs 1ms 10.0 DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) 120 80 40 10 0 0.0001 100 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=2.5°C/W PD 0.1 0.01 0.00001 0.001 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 160 Power (W) 100.0 ID (Amps) Coss Crss 0 0 ZθJC Normalized Transient Thermal Resistance Ciss 2000 Ton Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2010 www.aosmd.com Page 8 of 10 AON7900 1000 60 50 Power Dissipation (W) IAR (A) Peak Avalanche Current Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C TA=100°C TA=125°C 100 30 20 TA=150°C 10 0 10 0.000001 0 25 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 50 10000 40 1000 Power (W) Current rating ID(A) 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 30 20 50 150 TA=25°C 17 5 2 10 100 10 10 1 0.00001 0 0 25 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 50 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 150 10 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=72°C/W 0.1 0.01 0.001 0.0001 Rev 0: Sep 2010 Single Pulse 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) www.aosmd.com 1000 Page 9 of 10 AON7900 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Sep 2010 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 10 of 10