AON7804 30V Dual N-Channel MOSFET General Description The AON7804 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low RDS (ON) MOSFETs in a dual DFN3x3 package. The AON7804 is well suited for use in compact DC/DC converter applications. Features VDS 30V ID (at VGS=10V) 22A RDS(ON) (at VGS=10V) < 21mΩ RDS(ON) (at VGS = 4.5V) < 26mΩ D D Top View D1 G1 D1 S2 D2 G2 D2 S1 G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 1/6 Steady-State Steady-State A IAS, IAR 19 A EAS, EAR 18 mJ 17 W 7 3.1 RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s A 7 PDSM TA=70°C V 9 PD TC=100°C ±20 48 IDSM TA=70°C Units V 14 IDM TA=25°C Continuous Drain Current Maximum 30 22 ID TC=100°C S -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W www.freescale.net.cn AON7804 30V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 48 VGS=10V, ID=8A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8A 10 µA 2.4 V 17 21 A 21 VDS=5V, ID=9A µA 1.8 23 VGS=4.5V, ID=7A Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 26 mΩ 1 V 15 A 30 0.75 mΩ S 600 740 888 pF 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω 12 15 18 nC 6 7.5 9 nC VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω 2.5 nC 3 nC 5 ns 3.5 ns 19 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7804 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V 25 5V 20 3V ID(A) ID (A) 20 VDS=5V 25 15 15 10 10 5 VGS=2.5V 5 125°C 25°C 0 0 0 1 2 3 4 1 5 1.5 30 2.5 3 3.5 4 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 20 15 VGS=10V 10 5 1.6 VGS=10V ID=8A 1.4 17 5 2 VGS=4.5V10 1.2 1 ID=7A 0.8 0 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 40 ID=8A 1.0E+01 35 IS (A) RDS(ON) (mΩ) 40 1.0E+00 30 125°C 25 20 1.0E-02 25°C 1.0E-03 15 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7804 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=8A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 400 Coss Crss 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 RDS(ON) limited 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 1 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=7.5°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 160 10µs Power (W) 10µs 100.0 ID (Amps) 600 200 0 ZθJC Normalized Transient Thermal Resistance Ciss 800 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7804 30V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 TA=25°C TA=100°C 10 TA=125°C TA=150°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 8 4 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 25 TA=25°C 20 1000 Power (W) Current rating ID(A) 12 0 1 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 16 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7804 30V Dual N-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn