SHENZHENFREESCALE AON7804

AON7804
30V Dual N-Channel MOSFET
General Description
The AON7804 is designed to provide a high efficiency synchronous buck power stage with optimal layout and
board space utilization. It includes two low RDS (ON) MOSFETs in a dual DFN3x3 package. The AON7804 is
well suited for use in compact DC/DC converter applications.
Features
VDS
30V
ID (at VGS=10V)
22A
RDS(ON) (at VGS=10V)
< 21mΩ
RDS(ON) (at VGS = 4.5V)
< 26mΩ
D
D
Top View
D1
G1
D1
S2
D2
G2
D2
S1
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
1/6
Steady-State
Steady-State
A
IAS, IAR
19
A
EAS, EAR
18
mJ
17
W
7
3.1
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
A
7
PDSM
TA=70°C
V
9
PD
TC=100°C
±20
48
IDSM
TA=70°C
Units
V
14
IDM
TA=25°C
Continuous Drain
Current
Maximum
30
22
ID
TC=100°C
S
-55 to 150
Typ
30
60
6.2
°C
Max
40
75
7.5
Units
°C/W
°C/W
°C/W
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AON7804
30V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
48
VGS=10V, ID=8A
TJ=125°C
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8A
10
µA
2.4
V
17
21
A
21
VDS=5V, ID=9A
µA
1.8
23
VGS=4.5V, ID=7A
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VGS(th)
RDS(ON)
Typ
26
mΩ
1
V
15
A
30
0.75
mΩ
S
600
740
888
pF
77
110
145
pF
50
82
115
pF
0.5
1.1
1.7
Ω
12
15
18
nC
6
7.5
9
nC
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
2.5
nC
3
nC
5
ns
3.5
ns
19
ns
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON7804
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
4V
25
5V
20
3V
ID(A)
ID (A)
20
VDS=5V
25
15
15
10
10
5
VGS=2.5V
5
125°C
25°C
0
0
0
1
2
3
4
1
5
1.5
30
2.5
3
3.5
4
Normalized On-Resistance
1.8
25
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
20
15
VGS=10V
10
5
1.6
VGS=10V
ID=8A
1.4
17
5
2
VGS=4.5V10
1.2
1
ID=7A
0.8
0
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
40
ID=8A
1.0E+01
35
IS (A)
RDS(ON) (mΩ)
40
1.0E+00
30
125°C
25
20
1.0E-02
25°C
1.0E-03
15
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
125°C
1.0E-01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7804
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=15V
ID=8A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
400
Coss
Crss
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
15
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
RDS(ON)
limited
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
1
VDS (Volts)
10
100
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0
0.0001
0.001
0.01
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7.5°C/W
PD
0.1
Ton
0.01
0.00001
0.1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
160
10µs
Power (W)
10µs
100.0
ID (Amps)
600
200
0
ZθJC Normalized Transient
Thermal Resistance
Ciss
800
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON7804
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
TA=25°C
TA=100°C
10
TA=125°C
TA=150°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
8
4
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
25
TA=25°C
20
1000
Power (W)
Current rating ID(A)
12
0
1
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
150
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
16
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AON7804
30V Dual N-Channel MOSFET
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
6/6
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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