PANASONIC 2SD1938

Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
Unit: mm
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
2
1
(0.65)
• Low ON resistance Ron
• High forward current transfer ratio hFE
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
5˚
■ Features
2.8+0.2
–0.3
1.50+0.25
–0.05
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
25
V
Collector current
IC
300
mA
Peak collector current
ICP
500
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.2
–0.1
Symbol
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
0 to 0.1
Parameter
1.1+0.3
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
Marking symbol: 3W
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 mA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 25 V, IC = 0
Forward current transfer ratio *1
hFE
VCE = 2 V, IC = 4 mA
VCE(sat)
IC = 30 mA, IB = 3 mA
Collector-emitter saturation voltage
Transition frequency
Cob
ON resistance *2
Ron
Min
Typ
Max
20
Unit
V
0.6
V
500
0.1
µA
0.1
µA
2 500

0.1
VCB = 6 V, IE = −4 mA, f = 200 MHz
fT
Collector output capacitance
(Common base, input open circuited)
Conditions
80
V
MHz
VCB = 10 V, IE = 0, f = 1 MHz
7
pF
Ω
1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Ron Measuremet circuit
Rank
S
T
No rank
hFE
500 to 1 500
800 to 2 500
500 to 2 500
1 kΩ
IB = 1 mA
f = 1 kHz
V = 0.3 V
Product of no-rank classification is not marked.
VB
Ron =
Publication date: August 2004
SJC00313AED
VV
VA
VB
× 1 000 (Ω)
VA − VB
1
2SD1938(F)
PC  Ta
IC  VCE
IC  VBE
18
250
100
150
100
IB = 10 µA
14
12
8 µA
10
8
6 µA
6
4 µA
20
40
60
80 100 120 140 160
0
2
4
6
8
10
0
0.2
0.4
Forward current transfer ratio hFE
Ta = 85°C
0.01
25°C
Ta = 85°C
25°C
800
−25°C
600
100
400
0
0.1
1
10
100
Collector current IC (mA)
SJC00313AED
1.0
1.2
1.4
Cob  VCB
200
0.001
0.8
100
1 000
−25°C
0.6
Base-emitter voltage VBE (V)
hFE  IC
1 200
Collector current IC (mA)
0
12
VCE = 2 V
10
30
10
1 600
1 400
1
25°C
40
Collector-emitter voltage VCE (V)
IC / IB = 10
−25°C
50
2 µA
VCE(sat)  IC
0.1
Ta = 85°C
60
1 000
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
0
70
20
2
Ambient temperature Ta (°C)
Collector-emitter saturation voltage VCE(sat) (V)
80
4
50
0
2
VCE = 2 V
90
Collector current IC (mA)
200
Collector current IC (mA)
Collector power dissipation PC (mW)
Ta = 25°C
16
f = 1 MHz
Ta = 25°C
10
1
0
5
10
15
20
25
30
35
Collector-base voltage VCB (V)
40
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Consult our sales staff in advance for information on the following applications:
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therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
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be liable for any defect which may arise later in your equipment.
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2003 SEP