Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low ON resistance Ron • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 5˚ ■ Features 2.8+0.2 –0.3 1.50+0.25 –0.05 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 25 V Collector current IC 300 mA Peak collector current ICP 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 Symbol 1: Base 2: Emitter 3: Collector EIAJ: SC-59 JEDEC: SOT-346 Mini3-G1 Package 0 to 0.1 Parameter 1.1+0.3 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C Marking symbol: 3W ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 Base-emitter voltage VBE VCE = 2 V, IC = 4 mA Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 25 V, IC = 0 Forward current transfer ratio *1 hFE VCE = 2 V, IC = 4 mA VCE(sat) IC = 30 mA, IB = 3 mA Collector-emitter saturation voltage Transition frequency Cob ON resistance *2 Ron Min Typ Max 20 Unit V 0.6 V 500 0.1 µA 0.1 µA 2 500 0.1 VCB = 6 V, IE = −4 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Conditions 80 V MHz VCB = 10 V, IE = 0, f = 1 MHz 7 pF Ω 1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Rank classification *2: Ron Measuremet circuit Rank S T No rank hFE 500 to 1 500 800 to 2 500 500 to 2 500 1 kΩ IB = 1 mA f = 1 kHz V = 0.3 V Product of no-rank classification is not marked. VB Ron = Publication date: August 2004 SJC00313AED VV VA VB × 1 000 (Ω) VA − VB 1 2SD1938(F) PC Ta IC VCE IC VBE 18 250 100 150 100 IB = 10 µA 14 12 8 µA 10 8 6 µA 6 4 µA 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.2 0.4 Forward current transfer ratio hFE Ta = 85°C 0.01 25°C Ta = 85°C 25°C 800 −25°C 600 100 400 0 0.1 1 10 100 Collector current IC (mA) SJC00313AED 1.0 1.2 1.4 Cob VCB 200 0.001 0.8 100 1 000 −25°C 0.6 Base-emitter voltage VBE (V) hFE IC 1 200 Collector current IC (mA) 0 12 VCE = 2 V 10 30 10 1 600 1 400 1 25°C 40 Collector-emitter voltage VCE (V) IC / IB = 10 −25°C 50 2 µA VCE(sat) IC 0.1 Ta = 85°C 60 1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 0 70 20 2 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) 80 4 50 0 2 VCE = 2 V 90 Collector current IC (mA) 200 Collector current IC (mA) Collector power dissipation PC (mW) Ta = 25°C 16 f = 1 MHz Ta = 25°C 10 1 0 5 10 15 20 25 30 35 Collector-base voltage VCB (V) 40 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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