Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Unit Collector-base voltage (Emitter open) VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Emitter-base voltage (Collector open) VEBO 7 V IB 3 A Collector current IC 15 A Peak collector current * ICP 24 A Collector power dissipation PC 60 W (23.4) (4.5) 5˚ (2.0) 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 5.5±0.3 Rating 5˚ 1.1±0.1 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package (2.0) Symbol 3.3±0.3 Parameter 3.0±0.3 5˚ 5˚ (4.0) 2.0±0.2 18.6±0.5 (2.0) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Ta = 25°C (1.2) 26.5±0.5 • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area Base current 5˚ (10.0) ■ Features φ 3.2±0.1 22.0±0.5 15.5±0.5 Internal Connection C 3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B Note) *: Non-repetitive peak collector current E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Emitter-base voltage (Collector open) Forward voltage * VEBO VF Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Base-emitter saturation voltage * * ICBO Conditions IE = 750 mA, IC = 0 Min Typ Max 7 Unit V IF = 7.0 A −2 VCB = 1 000 V, IE = 0 50 µA VCB = 1 700 V, IE = 0 1 mA 12 3.0 V hFE VCE = 5 V, IC = 7.0 A VCE(sat) IC = 7.0 A, IB = 1.75 A VBE(sat) IC = 7.0 A, IB = 1.75 A 7 1.5 V V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 0.5 MHz Storage time tstg IC = 7.0 A, Resistance loaded 5.0 µs Fall time tf IB1 = 1.75 A, IB2 = −3.5 A 0.5 µs 2.1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: July 2004 SJD00321AED 1 2SC6012 IC VCE 10 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink 60 50 (1) 40 30 20 1.0 A 7 0.8 A 6 0.6 A 5 0.4 A 4 0.2 A 3 25 50 75 100 125 0 150 IB = 0 A 0 1 2 3 10 5 6 Forward current transfer ratio hFE Ta = 120°C 25°C 0.1 −40°C 10 Collector current IC (A) 10 1 0.1 1 Collector current IC (A) < 1 mA 1 500 −40°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) 100 Non repetitive pulse TC = 25°C ICP 1 t= 10 ms t= 1 ms t= 100 µs DC 10−1 10−2 5 1 000 25°C Safe operation area −40°C 10 500 0 9 10 25°C 15 0 8 Ta = 120°C 20 0 Ta = 120°C 10 IC fH = 64 kHz, TC < 90°C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. 25 7 VCE = 5 V Safe operation area (Horizontal operation) 30 4 hFE IC 100 1 1 6 Collector-emitter voltage VCE (V) IC / IB = 4 0.01 0.1 4 Collector current IC (A) 0 8 2 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 8 Ambient temperature Ta (°C) Collector current IC (A) VCE = 5 V 1.2 A 1 (2) (3) 2 000 Collector-emitter voltage VCE (V) 2 IC VBE 12 1.6 A 1.4 A 2 10 0 1.8 A 9 Collector current IC (A) Collector power dissipation PC (W) 70 2.0 A Collector current IC (A) PC Ta 80 SJD00321AED 10 10−3 1 10 100 1 000 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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