Single N-channel MOSFET ELM32D548A-S ■General description ■Features ELM32D548A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=85A Rds(on) < 4.6mΩ (Vgs=10V) Rds(on) < 7.2mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 85 54 V A 4 170 38 72 A A mJ 3 Continuous drain current Pulsed drain current Avalanche current Avalanche energy Ta=25°C Ta=100°C L=0.1mH Tc=25°C Tc=100°C Junction and storage temperature range Id Idm Ias Eas Power dissipation 59 23 -55 to 150 Pd Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 2.1 Unit °C/W 62.5 °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32D548A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=20V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Vgs=10V, Id=20A Rds(on) Vgs=4.5V, Id=15A Vds=5V, Id=20A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is If=20A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Rg Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V 1 Gfs Gate-drain charge Turn-on delay time 30 Vds=24V, Vgs=0V Forward transconductance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.50 μA ±100 nA 1.75 3.8 2.35 4.6 V 4.5 7.2 70 1.3 85 mΩ 1 S 1 V A 1 4 Vgs=0V, Vds=15V, f=1MHz 2320 346 285 pF pF pF Vgs=0V, Vds=0V, f=1MHz 0.9 Ω Vgs=10V, Vds=15V, Id=20A 54.0 7.5 nC nC 2 2 Qgd 17.3 nC 2 td(on) 24 ns 2 tr Vgs=10V, Vds=15V, Id=20A td(off) Rgen=6Ω 16 63 ns ns 2 2 24 ns 2 23 10 ns nC Qg Qgs tf trr Qrr If=20A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 40A. 4-2 Single N-channel MOSFET ELM32D548A-S N-Channel Enhancement Mode Effect Transistor ■Typical electrical and thermalField characteristics NIKO-SEM PD548BA TO-252 Halogen-Free & Lead-Free Output Characteristics Transfer Characteristics 40 40 32 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS=3V VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V VGS=3.5V 24 16 VGS=2.5V 8 0 0 1 2 3 4 5 6 32 24 16 25� -20� 8 125� 0 0 3 4 5 3000 1.8 2500 C , Capacitance(pF) Normalized Drain to Source ON-Resistance 2 Capacitance Characteristic On-Resistance VS Temperature 2.0 1.6 1.4 1.2 1.0 0.8 VGS=10V ID=20A 0.6 0.4 1 VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V) -50 -25 0 25 50 75 100 125 CISS 2000 1500 1000 500 COSS CRSS 0 150 0 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(C) Source-Drain Diode Forward Voltage Gate charge Characteristics 100 VDS=15V ID=20A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 10 6 4 2 0 0 10 20 30 40 50 10 150� 0.1 60 25� 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-To-Drain Voltage(V) Qg , Total Gate Charge(nC) D-06-3 REV 1.0 3 4-3 Single N-channel MOSFET TO-252 Halogen-Free & Lead-Free Safe Operating Area Single Pulse Maximum Power Dissipation 400 1000 Operation in This Area is Limited by RDS(ON) Single Pulse R�JC = 2.1 C/W TC=25C 320 100 Power(W) ID , Drain Current(A) PD548BA ELM32D548A-S N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM 1ms 10 0.1 160 10ms NOTE : 1.VGS= 10V 2.TC=25C 3.R�JC = 2.1 C/W 4.Single Pulse 1 240 80 100ms DC 1 10 0 0.001 100 0.01 VDS, Drain-To-Source Voltage(V) 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1 Notes 0.1 1.Duty cycle, D= t1 / t2 2.RthJC = 2.1 �/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] D-06-3 REV 1.0 4 4-4