Aug 2002 AO3407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -4.1 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) D TO-236 (SOT-23) Top View G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -3.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -4.1 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W AO3407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.1A Static Drain-Source On-Resistance gFS VSD IS VGS=-4.5V, ID=-3A Forward Transconductance VDS=-5V, ID=-4A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Units V µA -1.8 ±100 -3 nA V 40.5 57 64 52 73 87 mΩ -1 S V -2.2 A -10 TJ=125°C 5.5 A 8.2 -0.77 mΩ 700 pF VGS=0V, VDS=-15V, f=1MHz 120 75 pF pF VGS=0V, VDS=0V, f=1MHz 10 Ω 14.3 nC VGS=-4.5V, VDS=-15V, ID=-4A 7 3.1 nC nC VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω 3 8.6 5 28.2 13.5 27 nC ns ns ns ns Turn-Off Fall Time IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time -1 Max -1 -5 TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Typ 15 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. ns nC AO3407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -5V -4.5V -4V 6 10 -ID(A) -ID (A) VDS=-5V 8 15 -3.5V 5 VGS=-3V 0 0.00 4 125°C 2 25°C 0 1.00 2.00 3.00 4.00 5.00 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance RDS(ON) (mΩ) 3 4 1.6 80 VGS=-4.5V 60 VGS=-10V 40 20 VGS=-4.5V 1.4 VGS=-10V 1.2 1 ID=-2A 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 ID=-2A 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics 125°C 80 125°C 1E-03 25°C 1E-04 60 25°C 40 1E-05 1E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=-15V ID=-4A 800 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 600 400 Coss Crss 200 0 0 0 4 8 12 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 15 20 25 30 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 10 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100µs 10µs Power (W) -ID (Amps) 100 5 1ms 0.1s 10ms 1 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 SOT-23 Package Data SYMBOLS GAUGE PLANE PACKAGE MARKING DESCRIPTION SEATING PLANE θ A A1 A2 b C D E E1 e e1 L θ1 DIMENSIONS IN MILLIMETERS MIN 1.00 0.00 1.00 0.35 0.10 2.80 2.60 1.40 −−− −−− 0.40 1° NOM −−− −−− 1.10 0.40 0.15 2.90 2.80 1.60 0.95 BSC 1.90 BSC −−− 5° MAX 1.25 0.10 1.15 0.50 0.25 3.04 2.95 1.80 −−− −−− 0.60 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE RECOMMENDATION OF LAND PATTERN SOT-23 PART NO. CODE PNDLN PART NO. CODE AO3407 A7 NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation SOT-23 Tape and Reel Data