Complementary MOSFET ELM3F601JA-S ■General Description ■Features ELM3F601JA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=7.3A Rds(on) < 24mΩ(Vgs=10V) Rds(on) < 38mΩ(Vgs=4.5V) Vds=-30V Id=-4.3A Rds(on) < 60mΩ(Vgs=-10V) Rds(on) < 85mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy Tc=25°C Tc=70°C Power dissipation Vds 30 -30 V Vgs ±20 7.3 5.8 ±20 -4.3 -3.4 V A 2 Idm Ias Eas 60 17.4 15.0 -30 -18.0 16.2 A A mJ 1 Pd 2.0 1.3 1.7 1.1 W Id L=0.1mH Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Tj,Tstg -55 to 150 °C ■Thermal Characteristics Parameter Symbol Maximum junction-to-case Rθjc Maximum junction-to-ambient Rθja Device 8 • 1 7 2 6 3 5 4 Max. N-ch P-ch N-ch 7.5 8.0 61.0 P-ch 70.0 ■Pin configuration PDFN-3x3(TOP VIEW) Typ. Unit Note °C/W °C/W 3 ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 D1 D2 D2 G2 G1 S1 S2 Complementary MOSFET ELM3F601JA-S ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Ta=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge Qg Qgs Qgd td(on) tr Qrr 1.0 60 V 1.5 1 10 μA ±100 nA 2.5 V A 4 mΩ 4 S V 4 4 Vgs=10V, Id=8A 17 24 Vgs=4.5V, Id=6A Vds=10V, Id=8A If=8A, Vgs=0V 25 22 38 Vgs=0V, Vds=15V f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V Id=8A Vgs=10V, Vds=15V td(off) Id=1A, Rgen=6Ω tf trr 30 If=8A, dIf/dt=100A/μs 1 591 77 pF pF 65 3.5 pF Ω 13.0 2.5 nC nC 5 5 3.4 14 10 nC ns ns 5 5 5 30 10 ns ns 5 5 12.4 ns 3.2 nC NOTE : 1. Pulse width limited by maximum junction temperature. 2. Package limitation current is 30A. 3. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. 4. Pulse test : Pulse Width≤300 μsec, Duty Cycle≤2%. 5. Independent of operating temperature. 7-2 Complementary MOSFET ELM3F601JA-S ■Typical Electrical and Thermal Characteristics (N-ch) � � � � � � � � 7-3 Complementary MOSFET ELM3F601JA-S � � 7-4 Complementary MOSFET ELM3F601JA-S ■Electrical Characteristics (P-ch) Parameter Symbol Conditions Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Ta=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) Forward transconductance Diode forward voltage DYNAMIC PARAMETERS Gfs Vsd Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge Qg Qgs Qgd td(on) tr Qrr -1.0 -30 V -1.5 -1 -10 μA ±100 nA -2.5 V A 4 mΩ 4 S V 4 4 Vgs=-10V, Id=-4.5A 38 60 Vgs=-4.5V, Id=-3.5A Vds=-10V, Id=-4.5A If=-4.5A, Vgs=0V 54 11 85 Vgs=0V, Vds=-15V f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-10V, Vds=-15V Id=-4.5A Vgs=-10V, Vds=-15V td(off) Id=-1A, Rgen=6Ω tf trr -30 If=-4.5A, dIf/dt=100A/μs -1.1 548 87 pF pF 86 12 pF Ω 14.0 2.0 nC nC 5 5 3.5 16 13 nC ns ns 5 5 5 35 14 ns ns 5 5 16.7 ns 4.5 nC NOTE : 1. Pulse width limited by maximum junction temperature. 2. Package limitation current is 30A. 3. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. 4. Pulse test : Pulse Width≤300 μsec, Duty Cycle≤2%. 5. Independent of operating temperature. 7-5 Complementary MOSFET ELM3F601JA-S ■Typical Electrical and Thermal Characteristics (P-ch) � � � � 7-6 Complementary MOSFET ELM3F601JA-S � � � � � � 7-7