Dual N-channel MOSFET (common drain) ELM18810BA-S ■General description ■Features ELM18810BA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V and internal ESD protection. • • • • • • Vds=20V Id=7A (Vgs=4.5V) Rds(on) < 20mΩ (Vgs=4.5V) Rds(on) < 24mΩ (Vgs=2.5V) Rds(on) < 32mΩ (Vgs=1.8V) ESD Rating : 2000V HBM ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current 20 ±8 7.0 5.7 30 Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Pd Junction and storage temperature range Tj, Tstg V V 1.5 1.0 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 64 Max. 83 Unit °C/W 89 53 120 70 °C/W °C/W Note 1 3 ■Circuit TSSOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 DRAIN1/DRAIN2 SOURCE1 SOURCE1 4 5 GATE1 GATE2 6 SOURCE2 7 8 SOURCE2 DRAIN1/DRAIN2 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET (common drain) ELM18810BA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss 20 V 1 Vds=16V, Vgs=0V Vds=0V, Vgs=±4.5V 5 ±1 Gate threshold voltage Vds=0V, Vgs=±8V Vgs(th) Vds=Vgs, Id=250μA 0.4 ±10 1.0 On state drain current Id(on) Vgs=4.5V, Vds=5V 30 Rds(on) 0.6 μA μA μA V A 16.5 23.0 20.0 28.0 Vgs=2.5V, Id=5.5A Vgs=1.8V, Id=5A Vds=5V, Id=7A 20.0 24.0 29 24.0 32.0 Is=1A, Vgs=0V 0.76 1.00 2.5 pF pF pF Vgs=4.5V, Id=7A Static drain-source on-resistance Ta=55°C Ta=125°C mΩ Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Vgs=0V, Vds=10V, f=1MHz 1160 187 146 Rg Vgs=0V, Vds=0V, f=1MHz 1.5 Ω 16.0 nC 0.8 3.8 nC nC 6.2 12.7 51.7 ns ns ns 16.0 17.7 6.7 ns ns nC Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Qg Qgs Qgd Vgs=4.5V, Vds=10V, Id=7A td(on) tr Vgs=5V, Vds=10V td(off) RL=1.35Ω, Rgen=3Ω tf trr Qrr If=7A, dIf/dt=100A/μs If=7A, dIf/dt=100A/μs S V A NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Dual N-channel MOSFET (common drain) ELM18810BA-S ■Typical electrical and thermal characteristics 30 20 8V Vgs=5V Vgs =2V 15 20 Id(A) Id(A) Vgs =1.5V 10 10 Vgs =1V 25°C 0 0 1 2 3 125°C 5 4 0 5 0.0 Vds(Volts) 50 1.5 2.0 2.5 1.6 Normalize ON-Resistance Rds(on)(m� ) 1.0 Vgs(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 40 Vgs =1.8V 30 Vgs =2.5V 20 Vgs =4.5V 10 0 5 10 15 Id=6.5A 1.4 Vgs=1.8V Vgs=2.5V Vgs=4.5V 1.2 1.0 0.8 20 0 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 Id=6.5A 1E+00 50 125°C 1E-01 40 Is(A) Rds(on)(m� ) 0.5 125°C 30 1E-02 1E-03 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 0.0 8 0.2 0.4 0.6 0.8 Vsd(Volts) Figure 6: Body-Diode Characteristics Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Dual N-channel MOSFET (common drain) ELM18810BA-S 2000 5 Vds=10V Id=7A 1600 Capacitance (pF) Vgs(Volts) 4 Ciss 1200 3 2 800 Crss 400 1 0 0 0 5 10 15 0 20 100.0 100�s 10�s 1ms 0.1s 10ms 20 20 10 1s 10s DC 0.1 0.1 15 Tj(max)=150°C Ta=25°C 30 Power (W) Rds(on) limited 1.0 10 40 Tj(max)=150°C Ta=25°C 10.0 5 Vds(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics Id (Amps) Coss 1 Vds (Volts) 10 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z� ja Normalized Transient Thermal Resistance 10 1 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=83°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 0.01 0.00001 Ton 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000