Dual N-channel MOSFET (common drain) ELM18814BA-S ■General description ■Features ELM18814BA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V and internal ESD protection. • • • • • • • Vds=20V Id=7.5A (Vgs=10V) Rds(on) < 16mΩ (Vgs=10V) Rds(on) < 18mΩ (Vgs=4.5V) Rds(on) < 24mΩ (Vgs=2.5V) Rds(on) < 34mΩ (Vgs=1.8V) ESD Rating : 2500V HBM ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 20 V ±12 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current 7.5 6.0 30 Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Pd Junction and storage temperature range Tj, Tstg 1.50 0.96 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 64 89 Max. 83 120 Unit °C/W °C/W Note 53 70 °C/W 3 1 ■Circuit TSSOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name DRAIN1/DRAIN2 SOURCE1 3 4 5 SOURCE1 GATE1 GATE2 6 7 8 SOURCE2 SOURCE2 DRAIN1/DRAIN2 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET (common drain) ELM18814BA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Gate-source breakdown voltage Gate threshold voltage On state drain current Igss BVgso Vgs(th) Id(on) 20 Vds=16V, Vgs=0V Static drain-source on-resistance 1 5 10 Ta=55°C Vds=0V, Vgs=±10V Vds=0V, Ig=±250μA Vds=Vgs, Id=250μA Vgs=4.5V, Vds=5V Vgs=10V, Id=7.5A V Ta=125°C Rds(on) Vgs=4.5V, Id=7A Vgs=2.5V, Id=6A Vgs=1.8V, Id=5A Forward transconductance Gfs Vds=5V, Id=7.5A Diode forward voltage Vsd Is=1A, Vgs=0V Max. body-diode continuous current Is DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Coss Vgs=0V, Vds=10V, f=1MHz Reverse transfer capacitance Crss Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz SWITCHING PARAMETERS Total gate charge Qg Gate-source charge Qgs Vgs=4.5V, Vds=10V, Id=7.5A Gate-drain charge Qgd Turn-on delay time td(on) Vgs=5V, Vds=10V Turn-on rise time tr Turn-off delay time td(off) RL=1.3Ω, Rgen=3Ω tf Turn-off fall time Body diode reverse recovery time trr If=7.5A, dIf/dt=100A/μs Body diode reverse recovery charge Qrr If=7.5A, dIf/dt=100A/μs ±12 0.50 30 0.71 1.00 13 18 15 19 26 30 0.74 16 22 18 24 34 1.00 2.5 μA μA V V A mΩ S V A 1390 190 150 1.5 pF pF pF Ω 15.4 1.4 4.0 6.2 11.0 40.5 10.0 15.0 5.1 nC nC nC ns ns ns ns ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Dual N-channel MOSFET (common drain) ELM18814BA-S ■Typical electrical and thermal characteristics 30 10V 20 Vds=5V 3V 4V Vgs =2V 15 Id(A) Id(A) 20 10 10 Vgs =1.5V 25°C 0 0 1 2 3 4 125°C 5 0 5 0.0 Vds(Volts) 50 Normalize ON-Resistance 1.6 40 Rds(on)(m� ) 1.0 Vgs =1.8V 30 Vgs =2.5V 20 Vgs =4.5V 10 Vgs =10V 0 0 5 10 15 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics Vgs=2.5V Id=6A Vgs=4.5V 1.4 Id=7A Vgs=1.8V Id=5A 1.2 Vgs=10V Id=7.5A 1.0 0.8 20 0 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 Id=7.5A 1E+00 50 125°C 1E-01 40 Is(A) Rds(on)(m� ) 0.5 125°C 30 1E-02 1E-03 20 1E-04 25°C 25°C 1E-05 10 0 2 4 6 0.0 8 0.2 0.4 0.6 0.8 Vsd(Volts) Figure 6: Body-Diode Characteristics Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Dual N-channel MOSFET (common drain) ELM18814BA-S 2000 5 Vds=10V Id=7.5A Ciss 1600 Capacitance (pF) Vgs(Volts) 4 1200 3 2 800 1 400 0 0 0 5 10 15 Crss 0 20 100�s 10�s 1ms 0.1s 10ms 20 20 10 1s 10s DC 0.1 0.1 15 Tj(max)=150°C Ta=25°C 30 Power (W) Id (Amps) Rds(on) limited 1.0 10 40 Tj(max)=150°C Ta=25°C 10.0 5 Vds(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Coss 1 10 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z� ja Normalized Transient Thermal Resistance 10 1 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=83°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 0.01 0.00001 Ton 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000