Dual P-channel MOSFET ELM14805AA-N ■General description ■Features ELM14805AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • Vds=-30V Id=-8A (Vgs=-20V) Rds(on) < 18mΩ (Vgs=-20V) Rds(on) < 19mΩ (Vgs=-10V) ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Symbol Limit Unit Drain-source voltage Vds -30 V Gate-source voltage Vgs ±25 -8.0 -6.9 V A 1 -40 2.00 1.44 A 2 W 1 Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Pd Tj, Tstg -55 to 150 Note °C ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Rθja 50.0 73.0 62.5 110.0 °C/W °C/W 1 Maximum junction-to-lead Steady-state Rθjl 31.0 40.0 °C/W 3 ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 ■Circuit Pin No. Pin name 1 2 3 SOURCE2 GATE2 SOURCE1 4 5 6 GATE1 DRAIN1 DRAIN1 7 8 DRAIN2 DRAIN2 4-1 D2 D1 G2 G1 S1 S2 Dual P-channel MOSFET ELM14805AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±25V Gate threshold voltage On state drain current Rds(on) Gfs Vds=-5V, Id=-8A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=-1A, Vgs=0V Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -1.7 -40 Ta=125°C Vgs=-20V, Id=-8A Vgs=-4.5V, Id=-5A Forward transconductance V -1 -5 μA ±100 nA -2.5 -3.0 V A 16.0 19.0 20.5 15.0 33.0 25.0 18.0 Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Vgs=-10V, Id=-8A Static drain-source on-resistance -30 Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-10V, Vds=-15V Id=-8A 16 21 mΩ S -0.75 -1.00 -2.6 V A 2076 2500 pF 3 pF pF Ω 503 302 2 39.0 8.0 45.0 nC nC 11.4 12.7 nC ns Vgs=-10V, Vds=-15V 7.0 ns td(off) RL=1.8Ω, Rgen=3Ω tf trr If=-8A, dIf/dt=100A/μs 25.2 12.0 32 ns ns ns Qrr If=-8A, dIf/dt=100A/μs 26 40 nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Dual P-channel MOSFET ELM14805AA-N ■Typical electrical and thermal characteristics 50 -10V -8V 25 -6V 20 -5V 30 20 -Id (A) -Id (A) Vds=-5V -5.5V 40 -4.5V 10 15 10 125°C 5 Vgs=-4V 25°C 0 0 0 1 2 3 4 0 5 0.5 30 2 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 1.4 25 Rds(on) (m� ) 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-6V 20 15 Vgs=-10V 10 5 0 Id=-8A 1.3 Vgs=-10V 1.2 1.1 Vgs=-4.5V 1 0.9 0.8 0 5 10 15 20 25 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 60 1.0E+01 50 1.0E+00 Id=-8A 1.0E-01 40 30 125°C 20 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -Is (A) Rds(on) (m� ) 1 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 10 25°C 1.0E-05 1.0E-06 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Dual P-channel MOSFET ELM14805AA-N 10 2500 Capacitance (pF) 8 -Vgs (Volts) 3000 Vds=-15V Id=-8A 6 4 Ciss 2000 1500 Coss 1000 2 Crss 500 0 0 5 10 15 20 25 30 35 0 40 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 100�s 1ms Rds(on) limited 10�s 10ms 1s DC 30 Tj(max)=150°C Ta=25°C 20 0 0.01 0.1 1 -Vds (Volts) 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z� ja Normalized Transient Thermal Resistance 25 10 10s 10 20 30 0.1s 0.1 15 40 Tj(max)=150°C Ta=25°C 1.0 10 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000