Dual N-channel MOSFET ELM16800EA-S ■General description ■Features ELM16800EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • Vds=30V Id=3.4A (Vgs=10V) Rds(on) < 60mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) Rds(on) < 115mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±12 3.4 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current 2.7 20 1.15 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 0.73 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Pin No. Pin name 5 1 2 GATE1 SOURCE2 3 4 GATE2 DRAIN2 5 6 SOURCE1 DRAIN1 1 2 4 3 Max. Unit 78 106 64 110 150 80 °C/W °C/W °C/W Note 1 3 ■Circuit SOT-26(TOP VIEW) 6 Typ. 4-1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM16800EA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V μA 100 nA 1.0 1.4 V A 50 60 Vgs=4.5V, Id=3A Vgs=2.5V, Id=2A 66 60 88 80 75 115 Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=3.4A Static drain-source on-resistance Rds(on) V 1 5 Zero gate voltage drain current Gate threshold voltage On state drain current 30 Ta=125°C 0.6 20 Forward transconductance Gfs Vds=5V, Id=3A 7.8 Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=1A, Vgs=0V 0.8 Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge S 1.0 1.5 V A 390.0 pF Vgs=0V, Vds=0V, f=1MHz 54.5 41.0 3 pF pF Ω Vgs=4.5V, Vds=15V, Id=3.4A 4.96 0.80 nC nC 1.72 6.8 nC ns 3.6 ns 35.2 13.7 11.4 ns ns ns 6.0 nC Vgs=0V, Vds=15V, f=1MHz Vgs=10V, Vds=15V td(off) RL=4.7Ω, Rgen=6Ω tf trr If=3.4A, dIf/dt=100A/μs Qrr mΩ If=3.4A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Dual N-channel MOSFET ELM16800EA-S ■Typical electrical and thermal characteristics 15 10 10V 3V Vds=5V 8 4.5V 25°C 9 Id (A) Id (A) 12 2.5V 6 3 125°C 6 4 2 Vgs=2V 0 0 0 1 2 3 4 5 0 0.5 Vds (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 Vgs (Volts) Figure 2: Transfer Characteristics 150 Normalized On-Resistance 1.8 125 Rds(on) (m� ) 1 Vgs=2.5V 100 Vgs=4.5V 75 50 Vgs=10V 25 0 1.6 Vgs=4.5V Vgs=10V 1.4 1.2 Vgs=2.5V 1 0.8 0 2 4 6 8 10 0 25 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 Id=2A 1.0E-01 100 Is (A) Rds(on) (m� ) 150 125°C 125°C 1.0E-02 1.0E-03 50 25°C 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Dual N-channel MOSFET ELM16800EA-S 5 500 Capacitance (pF) 4 Vgs (Volts) 600 Vds=15V Id=3.4A 3 2 1 Ciss 400 300 200 0 0 1 2 3 4 5 0 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited 100�s 1ms 10s DC 0.1 1 Z� ja Normalized Transient Thermal Resistance 25 30 Tj(max)=150°C Ta=25°C 10 Vds (Volts) 10 0 0.001 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 20 5 1s 0.1 15 15 10�s 0.1s 10ms 1.0 10 20 Tj(max)=150°C Ta=25°C 10.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Power (W) Id (Amps) 100.0 Crss Coss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000